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Hexagonal nano-silicon carbide thin films doped and undoped with phosphorus which possess a characteristic of the ultraviolet photoluminescence have been deposited by helicon wave plasma enhanced chemical vapour deposition technique under the high hydrogen condition in this work. The optical and electric properties of the doped nano-SiC films together with the electric and photovoltage properties of the n-p nc-SiC/Si heterojunction is studied and analyzed.

本工作利用螺旋波等离子体化学气相沉积技术在高氢气条件下制备了具有紫外发光的六角晶型纳米碳化硅,对这种材料进行了不同比例的磷掺杂,并对这种掺杂的纳米碳化硅的光学、电学特性以及nc-SiC/Si异质结的电学特性和光电压特性进行了研究。

Compared to perturbation method, the influences of many factors on voltage stability margin are considered and Hessian matrix of control parameters is not necessarily calculated. The method has high calculation speed and accuracy.

相对于摄动方法而言,该方法将各种因素对于电压稳定域的影响考虑在内,且不需要求取控制参数的海森矩阵,具有计算速度快、精度高的特点。

This paper studies depression in the hot cathode glow discharge PCVD method of diamond films influence in the process, mainly from two aspects of research: a study of the process of discharge pressure of the impact of that pressure on the technology, the impact of state discharge , as well as pressure and discharge voltage of the relationship between the two, and experiment with different pressure, relative to the preparation of samples, and using Raman instrument and SEM analysis of the quality of the film, by comparing the different types of gas pressure on the quality of diamond films, summed up the most good gas pressure parameters of a high-quality diamond films.

本文研究气压在热阴极辉光放电PCVD方法制备金刚石膜过程中的影响,主要是从两个方面进行研究:一,研究制备过程中气压对放电的影响,得出气压对工艺,放电状态的影响,以及气压和放电电压的关系;二,采用不同气压进行实验,制备出相对应的样品,并用Raman和SEM等仪器对膜进行质量分析,通过对比不同气体压强对金刚石膜质量的影响,总结最佳气体压强参数,制备出高品质金刚石膜。

Compared with other gas discharge switches, such as gas spark gap, vacuum switch, hydrogen thyratron and ignitron, the parameters of PSS, such as hold-off voltage, peak current, rate of current rise, lifetime, time delay, jitter, have been greatly improved.

伪火花开关与其它气体放电开关如高气压火花间隙、真空开关、氢气闸流管及引燃管等相比,开关的各项参数如耐受电压、峰值电流、电流上升陡度、寿命、时延和抖动都有了较大改善。

There is higher voltage gain and indissoluble work, small nonlinear distortion.

存在较高的电压增益和不能分解的功,以及小的非线性失真。

Another consideration when measuring voltages from high resistance sources is the input bias current of the voltmeter.

在测量高电阻源时要考虑的另一个问题是电压表的输入偏置电流。

The driver stage function obtains enough high voltage amplification factor, as well as the output stage provides enough big drive current, for this reason, may use the belt collection electricity level altogether to shoot the amplifying circuit, its static bias current ratio input level must be big.

推动级的作用是获得足够高的电压放大倍数,以及输出级提供足够大的驱动电流,为此,可采用带集电级的共射放大电路,其静态偏置电流比输入级要大。

The amplifier has additional modulation and demodulation,and has the advantage of smaU input bias current, low maladjustment voltage and temperature excursion, exact feedback speciality and high common mode control ratio.

具有输入偏置电流小,低失调电压和温度漂移以及精密的反馈特性和高的共模抑制比能力。

An SMU that has a voltmeter with high input impedance and low current source ranges may also be used.

也可以使用具有高输入阻抗的电压表和微电流源的 SMU 来进行测量。

Because of the high input resistance and low offset current, the electrometer voltmeter has minimal effect on the circuit being measured.

由于具有高输入电阻和低偏置电流,静电计电压表对被测电路的影响极小。

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