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高熔金属

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With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业,不在行,求高手帮忙。谢谢!具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

After the \4ear resist alloy with high melting point is sprayed on the prototype , the spray formed layer is backupped, the prototype is separated from the spray layer , the post processing is completed, and a high precision perdurable metal tool is finally produced.

在该原型表面熔射高熔点耐磨合金后,通过对熔射层背衬补强、并将原型与熔射层分离以及后处理,即可制得高精度耐久金属模具。

After the \4ear resistant alloy with high melting point is sprayed on the prototype, the spray formed layer is backupped, the prototype is separated from the spray layer, the post processing is completed, and a high precision perdurable metal tool is finally produced.

在该原型表面熔射高熔点耐磨合金后,通过对熔射层背衬补强、并将原型与熔射层分离以及后处理,即可制得高精度耐久金属模具。

Preparation of the cathode includes:shaping under the press of 40Mpa, sintering at 550℃for 1 hour and at 900℃for 8 hours and threading with molybdenum bar; Considering the literatures we choose CaCl2 as salt for preparation titanium. Pretreatment of salt is for 1 hour at 100℃and for 2 hours at 300℃. Partial pressure of oxygen which need lower than 5.11×10-7Pa to reduct titanium oxides and hygroscopic property of salt need a sealed equipment to electrolyse. And finally successfully designed a satisfied one and the results show that the equipment can be satisfied the requirment of the experiment. Flow of the inert gas is 1.5L/min, the voltage is 2.8 V, temperature is 850℃and time is 2 hours during pre-electrolysis. Flow of the inert gas is 0.2L/min, the voltage is 3.1 V, temperature is 900℃and time changes with the mass of TiO2 during electrolysis, namely the greater need the longer time; To eliminate influence of salt and other impurities, the products need to wash with distilled water and dilute chlorhydric acid , then wash with dilute hydrochloric acid under supersonic wave assistant. Finally, electrometical properties of the electrolysis of TiO2 is researched by cyclic voltammetry and chronoamperometry, and results show that there are two main reodox steps, namely from TiO2 to TiO and from TiO to Ti.

阴极制备主要包括40MPa压力下模压成型、两段式烧结(1小时内升至550℃保温1小时,再1小时升温至900℃保温8小时)及烧结后TiO2块打孔用钼棒串接三个主要环节;实验中选用CaCl2作为电解熔盐,并对其进行预处理(100℃,保温1小时; 300℃,保温2小时);经热力学计算,还原钛氧化物的氧分压至少要低于5.11×10-7Pa,结合电解过程中所用熔盐CaCl2有极强的吸水性的特点,电解装置应有较高的密封性,自行设计了一套密封性可靠的电解装置,便于实验过程中熔盐预处理和氧分压的控制;通过干燥处理预电解过程中Ar流量大约为1.5L/min、电压为2.8 V、温度为850℃、时间为2小时,电解过程中Ar流量大约为0.2L/min、电压为3.1V、温度为900℃,实验结果表明电解时间与TiO2质量密切相关,质量越大需要电解的时间越长;通过自来水冲洗—稀盐酸浸泡、洗涤—在超声波辅助作用下稀盐酸洗涤,可减少熔盐及其它杂质对电解产物检测结果的影响;最后,通过循环伏安法、计时电流法对电解机理的研究,确定电解还原TiO2制备金属钛主要经历了TiO2-TiO-Ti的过程。

It was found that increasing pressure for blank can improve the compactedness of blanks so as to make foam aluminium materials with homogeneous pores. Foaming temperature, as one of the main influencing factors on foaming process, should be controlled higher than the melting point of Al or Alalloy to a certain extant in order to keep a reasonable viscosity. Thus, the foam aluminum with homogeneous pores and high porosity is available. As shown by experiments, such materials should be made on conditions that they shall be protected with molten salt under 300?MPa pressure at 675~680?℃.

研究了粉末冶金法制备泡沫铝材料的方法讨论了发泡过程中的保护方式、制坯压力、发泡温度等参数对泡沫铝体积质量、孔隙率、孔结构的影响,并对发泡机理进行了探讨增大制坯压力使得金属坯致密,可以得到孔结构均匀的泡沫铝材料;发泡温度是影响发泡的主要因素之一,发泡温度控制在高于铝或铝合金熔点,同时保持熔体具有一定粘度的范围内,能够得到孔结构均匀、高孔隙率的泡沫铝材料实验结果表明:采用熔盐保护方式,在300MPa的压力下,温度在675~680℃时,可得到孔径均匀、孔隙率高的泡沫铝材料。

I produced the various models of machines, including high frequency plastics welding machines, metal heat treatment of high frequency, high frequency of the bubble shell packaging machines, high frequency metal, screws implanted dedicated machines, high frequency welding machine at the same time, the suture heat sealing machine.

我公司生产的各种型号机器,包括高周波塑胶熔接机、高周波金属热处理机、高周波泡壳密著包装机、高周波金属网,螺丝埋植专用机、高周波同时熔接机、热气缝合密封机等。

The Company is responsible for people at high-frequency machine Through more than ten years of research and design, has been developed to create a series of applicable to all types of plastic / PVC, rubber, leather, Blister packaging high-frequency welding / fusing machine; trademark high-frequency equipment machinery, high-frequency metal weld / heat treatment machine ; high-frequency pipe machine; high-frequency synthetic resin preheating aircraft and other special plastics processing machinery.

本公司负责人在高周波机器上通过十余年的研究和设计,现已开发,制造出一系列适用于各类塑胶/PVC,橡胶,皮革,吸塑包装等高周波熔接/熔断机;高周波商标专用设备机械,高周波金属熔接/热处理机;高周波制管机;高周波合成树脂预热机以及其它特殊塑胶加工机械等。

Refining a variety of high-frequency plastic welding machines, high-frequency fusing machine, high-frequency metal heat treatment machines, wide-band ultrasonic machine, blister sealing machine, heat shrink packaging machine and other packaging equipment!

精制各种高周波塑胶熔接机,高周波熔断机,高周波金属热处理机,全频段超声波机,吸塑封口机,热收缩包装机等各种包装设备!

If the fluidity of the injection was bad, the appearance of the product would berough, brittle, and very difficult to satisfy the actual application. In order to improve thefluidity of the melting-body in full filling condition, different types of lubricant function were used in the paper. Though the metallic soap might enhance the fluidity of themelting-body, the dosage was huge, which might cause drops on the mechanics intensityof the product, and cause magnet to be crisp and easy to crack.

为改善在高填充时熔体的流动性,研究了不同润滑剂的作用,金属皂类可以提高熔体的流动性,但用量较大,会导致产品的力学强度的下降,磁体脆而容易开裂,乙撑双硬脂酰胺可以提高熔体的流动性,复合材料的力学强度也较高。

Safety Devices Protection against excessive temperatures is provided in part by plugs filled with fusible metal which melt at about 212°F.

对过高温度的安全装置保护部分由填充熔点约212°F的易熔金属的保险塞提供。

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