高汞离子

Determination of hydrogen chloride in air by ion chromatography was developed, the collection of sample and conditions of determination were investigated.

用离子色谱法测定环境空气样品中的氯化氢，建立了该空气样品的氯化氢采集和离子色谱分析的条件，并将该分析方法与常用的硫氰酸汞分光光度法相比，具有操作简便、快速、灵敏度高的特点。

It also classifies them in accordance with the compound method of triazene reagents as follows: reagents diazotizated with sodium nitrite and muriatic acid, reagents diazotizated with nitrosyl positive ion, reagents diazotizated with n-butyrate nitrite.These reagents with high sensitivity and good choice have been widely applied to the determination of microa mounts of cadmium and...

按三氮烯类试剂合成的方法进行分类，分别为在亚硝酸钠和盐酸作用下重氮化的试剂，在亚硝酰正离子作用下重氮化的试剂，在亚硝酸正丁脂作用下重氮化的试剂，此类试剂灵敏度高，选择性好，广泛应用于被镉、汞等过渡金属离子污染的环境样品的分析中。

Sensitive polarographic waves which relate to thiouracil, 6-mercaptopurine and homocystine(in sodium citric acid buffer solution) appeared in the presence of Cu.

高胱氨酸、6－巯基嘌呤和硫尿嘧啶均能与铜离子作用而在汞电极上产生两个吸附波。在柠檬酸钠溶液中，高胱氨酸与铜的络合物在－0.06v

The intensity ratio of TO and LO inMCT was observed to be different. Such difference was explained in terms of the different Ramangeometry arrangement.〓. The laser-induced micro-photoluminescence in the range of 1000～5000〓(1.34eV～1.83eV) was found for the first time in LPE MCT epilayer. The center of photoluminescence wasat 2750〓 or 1.62eV and the FWHM of luminescence was 2000〓 or 0.25eV. We assume thatthe photoluminescence is due to recombination of electron from an anion vacancy resonance levelto the top of valance. In addition, new Raman shift was observed at 750〓 in LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i.e., 1.73eV above the conduction band edge.

2首次在LPE生长的碲镉汞外延薄膜的显微Raman谱中，在1000～5000〓范围发现了激光激发显微荧光，该荧光的发光范围换算为电子伏特标度为1.34eV～1.83eV，荧光的发光中心大约位于2750〓，即1.62eV，发光的半峰高宽约为2000〓或0.25eV；指出该显微荧光来源于碲镉汞薄膜中的阴性离子空位共振能级的激光激发发光；观察到了碲镉汞外延薄膜中一个新的Raman散射峰，位于750〓位置； 3首次在一块用MOVPE方法生长的〓Te外延薄膜的显微Raman谱中，发现了1.46eV至2.21eV范围并伴随有周期结构的显微荧光峰，该发光峰对应的能带中心位于〓Te材料导带底上方1.73eV，通过研究得出样品在1.46eV至2.21eV范围的显微荧光峰是由于改进 MOCVD 生长工艺，提高了碲镉汞外延薄膜的结构质量所致；通过分析指出该显微荧光来源于外延层中的阴性离子空位的共振能级发光。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。