霍尔效应

Take the Hall Voltage Sensor effect as the foundation, has studied the magnet and the ferromagnetic component is away from and the magnetic field strength relations, discovered in 0-150mm, the distance change all will cause in the air the magnetic induction intensity change, in which 0-80mm changes the quantity quite to be obvious, in 40mm, basically will in particular assume the index relations change.

以霍尔效应为基础，研究了磁铁与铁磁构件距离与磁场强度关系，发现在0-150mm内，距离的变化都将引起空气中磁感应强度的变化，其中0-80mm内变化量比较明显，尤其是在40mm以内，基本呈指数关系变化。

We review the recent progress in the research on spin-orbit coupling and intrinsic spin Hall effect in semiconductor microstructures, including a detailed discussion of the physical origin of spin-orbit coupling in semiconductor microstructures and the intrinsic spin Hall effect in narrow-gap semiconductor quantum wells.

本文主要评述和介绍半导体微结构中自旋轨道耦合的研究和最近的研究进展。我们细致地讨论了半导体微结构中自旋轨道耦合的物理起源和窄带隙半导体量子阱中的自旋霍尔效应。

This Hall-effect testing use the method of modular designing and a variety of tools to improve the efficiency of the design.

此霍尔效应测试仪设计中采用了模块化设计方法，并使用了多种工具，提高了设计效率。

Simulation results also show that saddle-shaped distributed AMF can more effectively inhibit constriction of vacuum arc.

对于小电流扩散态真空电弧，重点仿真分析不同电弧电流与不同纵向磁场对其关键特性的影响，部分仿真结果进行了实验验证；对离子处于超音速流动的收缩态真空电弧的仿真表明，真空电弧的磁收缩主要是由于霍尔效应引起的，离子温度和电子温度沿轴向先增大后减小，马鞍形分布的纵向磁场能够更有效地抑制真空电弧的收缩，而且阴极斑点分布对真空电弧特性也有着显著的影响；对离子处于亚音速流动状态的大电流真空电弧的仿真表明，部分等离子体不能到达阳极而损失，马鞍形分布的纵向磁场能够更有效地抑制电弧等离子体的损失，同时能使阳极电流密度和能流密度的分布更加均匀。

X-ray diffraction was used to analyze the crystal structure and the field-emission scanning electron microscopy inspected the surface and cross-sectional morphology. X-ray photoelectron spectroscopy is used to determine the film composition. The optical transmittance, electric resistance, Hall Effect, and Seebeck coefficient were measured. It was found in XRD patterns that all samples possess In2O3 structure.

在特性量测方面，分别以X光绕射分析其晶体结构，场发射扫瞄式电子显微镜分析其表面及断面型态，以X光电子能谱分析仪分析薄膜成份，并搭配光穿透率、电阻率、霍尔效应及Seebeck系数等特性分析，探讨经热处理之后薄膜的热电特性变化。

The composition of the SiGe thin films were controlled by changing the ratio of the area of silicon and germanium. By changing the parameters of substrate temperature and annealing temperature, we examined the microstructure, composition, crystallinity, electrical and thermoelectric properties by field emission scanning electron microscope, X-ray photoelectric spectroscopy, secondary ion mass spectrometer, X-ray diffraction, Hall effect and Seebeck coefficient measurement.

利用改变矽锗靶材面积比例进行薄膜成份的控制，并藉由改变基板温度以及退火温度之制程参数，利用场发射扫描式电子显微镜、化学分析电子能谱仪、二次离子质谱仪、X光绕射仪、霍尔效应量测仪以及自组装之热电量测系统作为分析仪器，分别量测薄膜表面形貌、横截面、成分、结晶性质、电性以及Seebeck系数等特性。

When placing the semiconductor carrying current in the magnetic field axial to the current direction, the semiconductor will generate transverse galvanomagnetic phenomenon, namely generate electromotive force in the direction axial to the magnetic field and current, which is Hall Effect.

把载有电流的半导体放在垂直于电流方向的磁场中时，半导体会产生横向磁场电现象，即：在垂直于磁场和电流的方向产生电动势，这就是霍尔效应。

In the recent year, more and more physical problems on the noncommutative background are regarded as important for people with the study of the quantum Hull Effect and the string theory.

近几年，随着对量子霍尔效应和弦理论的研究，越来越多的非对易背景上的物理学问题引起人们的重视。

Then we formulates simple basic definition of fuzzy sphere, two kinds of quantum Hall effect and noncommutative Chern-Simons theory.

接着对模糊球、两种量子霍尔效应以及非对易Chern-Simons理论的基本概念作了简单的描述。

In2O3 thin films were prepared on glass substrates by radio frequency magnetron sputtering. The structural, electrical and optical characteristics of In2O3 films were investigated by atomic force microscope, X-ray diffraction, X-ray photoelectron spectroscope, UV-Visible spectrophotometer and Hall effect measurements.

采用射频磁控溅射法在玻璃衬底上制备氧化铟薄膜，通过测试原子力显微镜、X射线衍射、X射线光电子谱、紫外可见分光光度计以及霍尔效应，研究了氧化铟薄膜的结构和光、电特性。

I didn't watch TV last night, because it .

昨晚我没有看电视，因为电视机坏了。

Since this year, in a lot of villages of Beijing, TV of elevator liquid crystal was removed.

今年以来，在北京的很多小区里，电梯液晶电视被撤了下来。