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与 雪崩 相关的网络例句 [注:此内容来源于网络,仅供参考]

The detector,(ECADATA company's production), Si-photodiode , is used as the sensor. Its photoelectric current output is proportional to input light's energy. The gasoline flame radiation intensity and flicker frequency are both monitored to improve the system reliability.

经方案比较,决定选用基于火焰的红外光谱辐射特性的火焰检测原理,研制开发火焰监测系统,检测元件选择ECADATA公司生产的红外雪崩型硅光电二极管,光电二极管在接受红外辐射时,其产生光电流的大小与入射光能量成正比。

A model of the photon avalanche in a four level coupled system is proposed.

提出了四能级耦合系统的光子雪崩上转换模型。

Study on pulsed laser range finder based on digital polarity .

雪崩光电二极管在相位式激光测距仪中的应用。

On the seventh rappel Taeko was hit by an avalanche as she approached Yasushi at the anchors.

在第七个下降的绳距时,妙子在接近保护点的泰史时被雪崩击中了。

But it was Sir Edmund who first wriggled his way up a crack in the 12-metre (40-foot) rockface that had to be overcome after the south summit if the real one was to be achieved, and below which only oblivion awaited.

但是埃德蒙最先在雪崩后摸索着爬上12米的岩壁,那是上南峰的必经之路。假如得有人夺得第一,那么失利的那一个只能在人们的遗忘中等待时机。

The Saint Bernard was used as an avalanche and rescue dog in the snowy passes near the Hospice.

人们在雪崩时用它们来当救护狗,可以在旅客住宿处的雪地上看见它们。

The relationship of variation rate between the scan light beam length after passing through the deflector and the fast voltage pulse wasderived.

导出激光束通过偏转器后扫描光线长度与加到偏转器上的快速电压脉冲变化率关系,并在实验中分别用MOS管和雪崩管高压电脉冲发生器取代价格昂贵的冷阴极管高压电脉冲发生器,获得激光脉冲宽度压缩约两个量级,且实现激光脉冲宽度可调。

The scenes of penguins snowboarding down ice caverns, causing an avalanche, diving into the sea, being chased by leopard seals, being tossed like toys by killer whales are some of the most enjoyable action animation that I have seen.

有些场景则是我看过到过的最有趣的动作动画,例如企鹅从冰穴中的滑行,引发雪崩,跳入大海中,被一之海豹追赶,被食肉鲸象玩具一样抛入空中。

The experiment result shows that the holes generated by avalanche can be injected into gate oxide of a NMOSFET biased into snapback, and then both hole trapping and interface state generation can be found.

实验结果发现突发击穿,偏置下雪崩热空穴注入NMOSFET栅氧化层,产生界面态,同时空穴会陷落在氧化层中。

After pre-HE stress, the generated interface states can reduce the number of holes being injected into gate oxide generated by avalanche process during snapback stress, which causes the MOSFET snapback degradation to decrease in on-state and off-state modes.

在预加热电子应力后,HE产生的界面陷阱在snapback应力期间可以屏蔽雪崩热空穴注入栅氧化层,使器件snapback开态和关态特性退化变小。

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