降低电压的

Low voltage and low power , Operational amplifier, Current mode circuits.

尽可能地降低模拟集成电路的电压和功耗是模拟集成电路的发展趋势，已经受到国际上的广泛关注，因

The three-phase full-wave rectifier charging system is composed of 3 silicon-controlled rectifiers and 3 diodes, and a variable resistor is used to adjust the trigger level such that the power factor of generator can be raised, the current harmonic content can be reduced, and the operational efficiency of generator can be improved.

本研究之整流充电系统，为利用三颗矽控整流器和三颗二极体组成的三相全波矽控整流充电系统，利用VR可变电阻调整元件来做触发机能，可使发电机端功率因素提高，降低电流谐波含量，得到稳定的直流链电压，提高发电机的运转效率。

With the merits of space vector modulation: digitized control,harmonic decrease,high ratio of voltage used,fast dynamic response and so on,and at the same time deadbeat and DSP control is introduced, as well as two-loop control of the system,we gained power factor is near unit and current THD is well below 10% in our digitized arc welding power system.

基于空间矢量脉冲宽度调制技术的易于数字化、可降低谐波、电压利用率高、动态响应快等特点，引入无差拍思想、总体系统的双环控制思想和DSP控制，实现了功率因数为1，电流谐波畸变远小于10％弧焊电源系统的数字化。

The on-state resistance is lowered by 24％ because of the higher impurity concentration of the SOI surface.

采用这种方法制得的SOI LDMOS的纵向击穿电压提高了43％，导通电阻降低了24％，这是因为它的表面浓度更高。

In this way,the vertical breakdown voltage of SOI LDMOS with 2μm thickness SOI layer can be improved by 43%.The on-state resistance is lowered by 24% because of the higher impurity concentration of the SOI surface.

采用这种方法制得的SOILDMOS的纵向击穿电压提高了43%，导通电阻降低了24%，这是因为它的表面浓度更高。

The investment of the constant capital is 319 thousand yuan, the investment of the flow capital is 50 thousand yuan The money includes self-raised money 269 thousand and the applied loans 100 thousand yuan.

该产品用于提高电网的功率因素，降低电网中的高次谐波含量，提高电压质量，故该产品满足城乡电网中用量最大的一种电容器，市场需求量极大。

In order to improve the speed of whole ADC and largely reduce the numbers of comparators, a type of high speed voltage comparator is designed.

设计了一种高速的电压比较器来提高整个转换器的速度，并且大大降低了比较器的数目。

The effects of AlN spacer layer on AlGaN/GaN HEMTs are studied, and the results show that the insertion of AlN spacer layer can improve gate schottky barrier and decrease gate leakage current.

研究了AlN阻挡层对AlGaN/GaN HEMT器件性能的影响，结果表明，AlN阻挡层的增加提高了栅肖特基势垒，增加器件的关断电压，降低了栅泄漏电流。

Using the same concept, we further provide the TaN-HfAlO-HfON-SiO2-Si MONOS device to operate at only 8 V under faster 100 us.

为了更进一步的降低记忆体元件操作电压使其达到嵌入式单一晶片系统的应用。

Reactive power optimization of power system is not only an effective means to ensure power system operation securely and economically, but also one of the most important methods to improve the voltage quality and reduce the transmission loss.

电力系统无功优化是保证电力系统安全、经济运行的一项有效手段，是降低网络损耗、提高电压质量的重要措施。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。