阻断开关

This paper proposes a novel zero-voltage and zero-current-switching pwm three-level converter, which introduces a block capacitor in series with the primary winding of the transformer to make the primary current to reduce to zero during zero state.

提出一种新颖的零电压零电流开关PWM三电平直流变换器，它是在基本的三电平直流变换器的变压器一次侧串入一个阻断电容，使一次电流在零状态时减小到零。

The role of a-Si:H sublayers is to interrupt the continuous growth and limit the thickness of pc-Si:H sublayers. The a-Si:H sublayers are deposited by two methods, one is fabricated by low hydrogen dilution ratio R = 4, and the second is deposited by pulse-wave modulation plasma with turn-on time (TON = 25 ms) and plasma turn-off time (TOFF = 75 ms).

阻断层所用的非晶矽薄膜采用两种方式制作，第一种是利用低氢稀释比(R = 4)制作的非晶矽，第二种是利用脉波调变电浆开启时间及开关时间分别为25ms及75ms pulse(25ms/75ms所制作的非晶矽。

It provides the link between the theoretical background for limiting the voltage stress on each switching component and the range of voltage variation for an imbricated cell of flying-capacitor multilevel inverter.

并根据单元电压的波动特性，给出了悬浮电容容量的具体选择方法，为保证功率开关承受均衡的阻断电压和有效限制单元电压的波动范围提供了理论依据。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。