阈值电压

The brownout detect comparator has a detect threshold voltage of 1.21 V. This pin senses the voltage of the bulk capacitor through a resistor divider network to determine the brownout event.

掉电检测的比较有一个电压检测阈值的1.21五，该引脚通过一个电阻分压器感官网络上的大电容电压来确定掉电事件。

34C02M8/LM8 Pinout: Short Circuit Current Output Current Transition Time Maximum Transmission Rate 1,000 RS-422 RECEIVER Common Mode Range Differential Input Differential Input Threshold-0.2 Input Voltage Hysteresis30 Input Resistance3 TTL Output Level V V2.4 Maximum Receiving Rate1,000 Short Circuit Output Current POWER REQUIREMENTS V =+12V, 10% V =+5V, 10% V =-12V, 10% ENVIRONMENTAL Operating Temperature -CS0 -MR-55 Storage Temperature-65

34C02M8/LM8引脚说明：短路电流输出电流过渡时期的最大传输速率1000的RS - 422接收器差分输入共模范围差分输入阈值0.2输入电压Hysteresis30输入Resistance3 TTL输出等级V 2.4版本的最大接收Rate1，000短路输出电流电源要求ν= 12五，10％的V =+5 V的，10％的V =- 12V的，10％，环境工作温度- CS0 -议员- 55存储温度- 65

Due to its good effect in the reservation of information of signal abrupt change, mathematical morphology is often applied in the detection and location of short-term power quality disturbance, however, there is still a defect of invalid detection existing in partial detection methods based on mathematical morphology while some zero-crossing disturbances are detected. In this paper three mathematical morphology based disturbance detection and location methods, i.e., the method based on first-order derivation and morphological gradient, the method based on morphological gradient and soft threshold processing and the method based on dq decomposition and top-hat transform, are analyzed, that is, by means of simulation the adaptability of these methods in the analysis on the signals of voltage sag, voltage swell and electromagnetic transient oscillation is compared.

数学形态学因其在保留信号突变点信息方面有很好的效果，因此常用于短时电能质量扰动的检测和定位，但基于数学形态学的部分方法仍存在对某些过零点扰动检测失效的缺点，文章分析了3种基于数学形态学的扰动检测和定位方法，即基于1阶求导和形态梯度的方法、基于形态梯度和软阈值处理的方法、基于dq分解和高帽变换的方法，通过仿真比较了3种方法在分析电压暂降、电压暂升、电磁暂态振荡等信号方面的适应性，结果发现基于dq分解和高帽变换的方法在检测过零点扰动时具有很好的效果，因此选取这种方法对实测扰动数据进行了检测和定位分析。

The output waveform may be offset with respect to ground if the inverting input of the threshold detector, A1, is offset with respect to ground.

如果阈值检测器A1的反相输入端对地有一个偏置电压，那么输出波形也将带有一个对地的偏置。

The first and second circuit components are High Voltage Threshold CMOS inverters.

第一和第二电路组件是高电压阈值CMOS反相器。

Second,using this technique,the dual-threshold voltage techniques and the multiple supply voltages techniques,a novel domino XOR gate is present and its static power and dynamic power are reduced by up to 82% and 21%,as compared to the standard N type domino XOR gate.

然后，在此技术的基础上，综合应用多电源电压技术和双阈值技术设计了功耗更低的多米诺异或门，与标准的n型多米诺异或门相比，静态功耗和动态功耗分别减小了82%和21%。

Plain scan and enhanced scan were performed in these patients with Siemens 64-slice spiral CT with the following parameters: 1.0-mm section thickness,0.6-mm collimation,pitch of 1, voltage of 120Kv and tube current of 100mAs, The scanning range is from the thoracic inlet to posterior costophrenic angle; A 80-100ml dose of nonionic iodinated contrast material is injected intravenously at approximately 4-5 ml/sec.

扫描采用Siemens 64层螺旋CT；扫描参数选择层厚1 mm，准直0.6mm，螺距1，管电压120 kV，电流100 mAs；扫描范围从胸廓上口至后肋膈角；强化时对比剂为非离子型对比剂(碘海醇，350 mg I/ml)，注射流率4～5 ml/s，对比剂总量80～100 ml；采用人工智能触发扫描技术，触发点选择肺动脉主干横断层面，阈值为100 HU，触发扫描延迟时间为6 s。

By simply specifying primary and secondary limits for the battery resistance and the minimum voltage threshold, the battery tester quickly displays Pass, Warning or Fail based on the combination of reference values, for fast and accurate assessment.

通过简单地指明小学和中学的限制电池电阻和阈值的最低电压，电池测试仪快速显示密码，警告或失败的基础上结合的参考值，为快速，准确的评估。Ordering Information 订购信息

This architecture is based on ISO/IEC 18000-6C and targeted at ultra-low power consumption. By applying methods like system-level power management, global clock gating and low voltage implementation, the total power of the design is reduced to a few microwatts.

通过采用系统级功耗管理，全局钟控，行波计数器以及低阈值低电压逻辑单元等策略，设计功耗最终控制在0.35 μm工艺下的18.6 μw，并可通过仿真在0.18 μm工艺下进一步优化到7 μw左右。

Therefore, the EL spectra of (Znq_2)_4 is wider than that of Znq_2. 4._2 was synthesized. The analysis of molecular spatial structure and the characterization of material performance of_2 and Liq showed that two Liq molecules and two Naq molecules were connected by Na-O-Na bond bridges to form_2. Compared with Liq,_2 exhibits stronger rigidity in planar molecular structure, larger steric hindrance and intermolecular distance, and much smaller molecular polarity, thus resulting in much longer fluorescence lifetime, much higher fluorescence quantum efficiency, wider energy bandgap and better film formability. When used as light-emitting layer in OLED,_2 shows lower formation probability of excited dimmer and exciplex formation than Liq, thus emits bluer light with higher current efficiency than Liq. When_2 ultrathin film is used as electron injection layer in OLED, it exhibits higher current density, higher luminance, lower turn-on voltage and higher current efficiency than Liq ultrathin film for the existence of sodium ions in_2 ultrathin film. 5. The summarization the relationship between molecular spatial structure and material performance of Alq_3,(Znq_2) and Liq, lead the conclusion that the molecular spatial structure of Mq_n affects its material performance in such aspects as the rigidity of planar molecular structure, intermolecular interaction, molecule stacking mode and intermolecular distance.

制备了_2，通过对_2和Liq的分子空间结构与性能进行分析与讨论，发现_2是通过两个Na-O-Na键桥将两个Liq和两个Naq连接构成的，其分子平面结构的刚性程度强于Liq，空间位阻大于Liq，分子之间的距离大于Liq，分子极性远远小于Liq；_2的荧光寿命长于Liq，荧光量子效率高于Liq，成膜性优于Liq；_2的禁带宽度比Liq大，光致发光光谱中_2的最大发射峰较Liq发生蓝移；当_2在OLED中作为发光层时，激发二聚体与激基复合物的生成几率远远小于Liq，发的光比Liq更蓝，电流效率大于Liq；_2超薄膜中有Na离子的存在，与Liq超薄膜相比，当其在OLED中作为电子注入层时，具有更大的电流密度，更高的发光强度，更低的阈值电压和更高的电流效率 5、对上述Alq_3、Znq_2和Liq的分子空间结构与材料性能之间的关系进行了归纳总结，认为Mq_n的分子空间结构主要在分子平面结构的刚性程度，相邻分子之间的相互作用，分子堆叠的方式和分子之间的距离这四个方面影响其性能。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。