阈值电压

The discharge current varied logarithmically with concentration.

碳纳米管的直径越小，阈值电压越小。

Strained Si PMOSFET with Polycrystalline SiGe gate can enhance its performance for improvement of carrier mobility and turnable threshold voltage without impurity scattering to carrier.

应变Si pMOSFET以多晶SiGe做栅，既能提高空穴的迁移率，又能调节器件阈值电压而不会对载流子引入杂质散射，因而提高了器件性能。

A metal-organic complex thin film, constructed by Cu and a new organic material 3,9-dianthracene-10-(dicyanomethylene-9--2,4,8,10-tetrathiaspiro [5,5] undecane was reported. The device with a sandwich structure can be transferred from high to low-impedance under 6V with delay and switching times of less than 1000 and 30 ns, respectively.

开发出另一种新型有机分子材料3，9-双(10--9-亚甲蒽基-2，4，8，10-四硫杂螺[5，5]十一烷，该分子材料与Cu络合构成的电双稳薄膜Cu-AOSCN，阈值电压6V左右，跃迁时间小于30ns，弛豫时间小于1us。

The non-uniform channel impurity, the non-equal surface potential for the changing of balance energy band and the gate capacitor by the edge effect is thought about; the mathematics expression of the deep sub-micron non-uniform channel DMOS threshold voltage model is obtained.

计及沟道区杂质的二维非均匀分布、平衡态能级对沟道各点表面势的影响和栅电容的边缘效应，给出深亚微米DMOS的阈值电压二维解析式。

The performances of devices degrade notably when the irradiation dose is larger than these thresholds.(3) The electron-hole pairs in oxides and interface states on Si/SiO〓 induced by radiation, which also can lead the voltage drift of control transistor in pixels, were the chief reason that leads the increase of dark current density in pixels.

3分析认为：辐照在像素的氧化层中诱发的电子—空穴对和Si/SiO〓界面形成的界面态使像素暗电流密度增加；同时也导致转移晶体管的阈值电压漂移，这是造成器件性能退化的主要原因。

Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell.

但是，在这篇论文中，我们发现经过长期循环擦写后，三栅 SuperFlash闪存在电子被擦除后的阈值电压的增加不是因为编程时而导致的浮栅氧化物的退化，而是由于擦除时所造成的隧穿氧化物的退化。

Variations among the pixels may result from different electron mobilities and/or threshold voltages of transistors included in the pixels.

像素之间的差异可由包括在像素中的晶体管的电子迁移率和/或阈值电压的不同而引起。

FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.

图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。

Through the analyses of electronic structures, we study the field-emission property of capped single-walled carbon nanotube.

通过对碳纳米管电子结构的分析，我们从微观上研究了影响场发射阈值电压和电流的因素。

This method can obtain the threshold voltage,mobility of small-dimensional devices and velocity saturation factor, while the resultsobtained by this method includes the short, narrow channel effects, the degradation ofchannel mobility due to gate voltage, velocity saturation effect and the seriesresistance of source terminal.

该方法可提取出小尺寸MOS器件阈值电压、迁移率和速度饱和因子，从而反映出小尺寸器件的短、窄沟效应，迁移率退化效应，速度饱和效应及源漏电阻对器件特性的影响。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。