阈值电压

We also investigated the instabilities of OFET that is characteristic of threshold voltage shift.

我们还对以阈值电压漂移为特征的OFET稳定性进行了研究。

Based on the model, we provide a new simple analytical expression for the threshold voltage of the sidegating effect .

在此基础上，得到了旁栅阈值电压的新解析表达式。

Depletion width is analyzed and the expression of the 2D threshold voltage model of DMOS devices is given.

提出了DMOS器件的二维阈值电压模型，分析了耗尽层宽度的变化，并得到了模型的数学表达式。

The result shows that the threshold voltage decreases with the increasing Ge Profile and the strained silicon thickness.

研究结果表明阈值电压随应变Si膜中Ge组分的提高和变Si膜的厚度增加而降低。

This is achieved by adopting a replica transistor with the same threshold voltage as the sampling transistor.

这是通过采用一个与采样MOS开关具有相同阈值电压的"复制"开关得以实现的。

The strength of the reflected light is measured and suitable threshold voltage is set to ensure the reliability and precision of the system.

对反射光强进行测量，以此为依据设置阈值电压以保证系统的可靠性和准确性。

After structure design aimed to high transconductance, parameters of device structure are modified in detail.

然后用二维模拟软件Medici模拟，得到器件的阈值电压约为-0.1v，泄漏电流很小。

The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.

在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。

In order to emulate and evaluate the system performance, the signal-to-noise and probability of detection vs. the gain and threshold voltage of APD arrays were discussed in this paper.

为了仿真评估系统的性能，主要分析了APD阵列增益对系统信噪比和探测概率的影响，APD阵列的阈值电压对系统探测概率的影响。

It is observed that the threshold voltage, gain factor and current in linear and saturation region mismatch linear depend on the inverse of the square root of the device area.

由已经获得的经验知道，线性区和饱和区的阈值电压、增益及电流等参数的不匹配性均与器件面积的平方根成反比。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。