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On occasions the electric carving process must be hard-coated copper.

电雕工艺的场合必须镀硬质铜。

Hatpin of base metal , whether or not plated with precious metal

女帽饰针，贱金属制，不论是否镀有贵金属

The special lamination of polyethylene and aluminum foil which has good function on reflecting light and thermal makes the heat insulation not only has good functions on insulation, thermal reflection, heat protection, counter radiation but also has good functions on moisture proof and heat insulation and energy saving when used as building material roof, wall and floor etc.

通过镀铝膜材料反光、热的特性和聚乙烯材料的结合，使其不仅具有良好的绝缘、热反射、隔热、反辐射功能，而且还通过该材料的特性在房屋建筑应用上能起到很好防潮、保温、节能作用。

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

Because our laboratory use helicon sputtering system that is MBE-like to deposit aluminium nitride film experience for many years , and control to the understanding and quality of the aluminium nitride film has sutible confidence . Comprehensive above-mentioned material advantages , we choose aluminium nitride as the high dielectric constant material in our research .

此外由於本实验室使用具有类MBE成长机制之回旋溅镀系统成长氮化铝薄膜已有多年经验，使得氮化铝成为本研究中的高介电值材料。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

World War I galvanized Hesse as a political being and as an author.

第一次世界大战镀锌黑塞作为一种政治福祉和成为一个作家。

Electro-welded mesh, hexagonal net, iron wire, steel nail, T-shaped nail.

7C62 7C64 镀锌电焊网，六角网，铁丝，水泥钢钉，T型钉。

Main production welded wire mesh, square wire mesh, stainless steel mesh, the network brass, hexagonal, steel net, aluminum-magnesium alloy screens, galvanized, painting screens, plastic screens, deep-processed products wire meshes, as well as various special-shaped net, Hulan Wang , Widely used in petroleum, chemical, construction, civil, food and other aquaculture industries.

主要生产电焊网，方眼网，不锈钢丝网，黄铜网，六角网，钢板网，铝镁合金窗纱，镀锌、烤漆窗纱，塑料窗纱，深加工产品烧烤网，以及各种异型网、护栏网等，广泛用于石油、化工、建筑、民用、食品养殖等各种行业。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新