错配
- 与 错配 相关的网络例句 [注:此内容来源于网络,仅供参考]
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We have been interested in design and synthesis of macrocyclic lanthanide complexes which are capable of catalytically hydrolyzing phosphodiester bonds. Because of their high thermodynamics stability, low kinetics lability, high coordination numbers, and charge density, macrocyclic lanthanide complexes will be suitable as artificial nucleases.
合成设计能促进磷酸酯键水解的金属错合物,一直是我们实验室很感兴趣的研究领域,尤其是以镧系金属离子大环配位子错合物这方面的研究,因其具有高度的热力学稳定、动力学稳定、高配位数及电子密度等特性,使得镧系金属大环错合物非常适合作为人造水解酶。
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We will synthesize NO2A, PhNO2A and its dimer structure, and study the stability constants for lanthanides complexes and kinetics in hydrolyzing BNPP. And we also want to understand their differences in catalytic mechanism.
由前人的研究可得知,改变配位子的特性,或许可提高金属错合物对於磷酸酯键的水解效力,因此我们将比较NO2A 及 PhNO2A 对於镧系金属稳定常数,及其镧系金属错合物水解磷酸酯键的影响。
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The collating quality will be affected when the pleonastic signature, the missing signature, the wrong signature or the blank sheet occurs. In this case, the whole book will be wasted, which may have the bad effect in our society.
而在配页工序中影响配页质量的是由重复的多帖、少帖、错帖以及夹杂白纸等原因,它们最终导致整本书的浪费,造成经济损失甚至社会影响。
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This dissertation was focused on the research about the formation and evolution of NQB from the Late Triassic to the early middle Epoch of Jurassic Period, including integrated analyzing the characteristic of the key stratigraphic surfaces, the time of the key stratigraphy, regional rock straigraphy, biostratigraphy and chronostratigraphy, sedimentary system and depositional facies. On basis of these analysis, a tectonic evolution model have been established for NQB during from the Late Triassic to the early middle Epoch of Jurassic Period.1. After the systematic surface analysis about main stratigraphy units, we found that:(1) the bottom of Xiaochaka formation was comformity with the middle Triassic in the basin, and in the north margin it was deposited and overlapped on the different period stratigraphy before Triassic.(2) The top surface of Xiaochaka formation developed regionally karst and paleo-karst breccia, and was uncomformity with Nadigangri Formation, these things suggest that NQB in Xiaochaka depositing stage was developed from middle Triassic basin, and then an extensive regression occurred, the deposition was over and erosion come into being.(3) The lithologic assemblage, geochemistry, mixed fossils, and stratigraphy overlapping characteristic of Quemocuo Formation in early middle Jurassic indicted that the uncomformity surface was an extension-unconformity.2. Integrated analysis about stratigraphy division and correlation indicted that:(1) the paleontologic assemblage of Xiaochaka formation show its time was Carian -Norian stage of late Triassic. According to it was overlapped by late Triassic Nadigangri Formation, so Xiaochaka formation should be Carian - early Norian stage.(2) the SHRIMP Zircon U-Pb age of Nadigangri formation volcanic rocks wear vary form 216 to 205 Ma, so its time should be Norian, but maybe extended into Rhaetian Stage.(3) The age of its bottom volcanic rocks, the fossil assemblages of its middle and upper members and overlapped by lower Jurassic, indicted the age of Riganpeicuo Formation was Norian - Rhaetian stage. And the same time, the volcanic rocks geochemistry of Nadigangri and Riganpeicuo formation both reflected that they wear formed in rift tectonic settings. The lower lithologic and surface characteristic, fossil assemblages and its upper maybe was conformity with lower Jurassic, all reflected that the age of Tumengela Formation in Tumen area should be Norian - Rhaetian stage.
论文对晚三叠世—中侏罗世早期盆地的形成与演化开展了研究,包括关键地层界面特征分析、关键地层时代归属分析、区域岩石地层、生物地层和年代地层的综合对比分析、区域沉积体系与沉积相分析、岩相古地理分析,最终建立晚三叠世—中侏罗世早期羌塘盆沉积—构造动力演化模式。1、系统的对各地层单元的界面分析发现:(1)肖茶卡组底界在盆地内部与中三叠统整合关系,在盆地北缘为沉积超覆于不同时代的前三叠系之上:(2)肖茶卡组顶界面发育古岩溶角砾岩,与上覆那底岗日组为岩溶不整合接触,说明肖茶卡组沉积时期的羌塘盆地是在早中三叠世的盆地基础发展起来的,后期出现了广泛的海退事件,使盆地结束沉积并遭受风化剥蚀作用;(3)中侏罗统雀莫错组的岩性组合特征、岩石化学特征、古生物化石混积和地层的沉积超覆现象均表现出裂陷环境下形成的伸展不整合面的特征。2、综合地层划分与对比分析认为:(1)肖茶卡组古生物化石组合反映其时代为晚三叠世卡尼期—若利期,根据其上被上三叠统那底岗日组不整合覆盖,将其时代厘定为卡尼期—若利期早期;(2)那底岗日组火山岩SHRIMP锆石U-Pb年龄在216~205 Ma之间,其时代主要为若利期,可能包含有瑞替期:(3)日干配错组底部火山岩的年龄、中上部化石组合及其被下侏罗统整合覆盖,综合反映的时代为晚三叠世若利期—瑞替期,而且那底岗日组火山岩和日干配错组火山岩的地球化学成分分析反映两者均为引张构造背景下的产物;土门地区的土门各拉组的下部岩性及界面特征、化石组合和上部可能被下侏罗统整合覆盖,综合反映其时代为若利期—若利期。
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On the bases of a solid solution hardening model, and considering the solubility of isoelectronic impurities in InP crystals and the elastic misfit arised from the differences of the tetrahedral radii between added impurities and host atoms, the pinning forces as large as 〓 have been obtained for isoelectronic impurities in InP.
以InP单晶中的等电子杂质为例,根据固溶强化模型,考虑了等电子杂质在InP单晶中的溶解度以及掺入杂质与基质原子之间共价半径之差引起的弹性失配,计算了这些杂质在InP中对位错的钉扎力可达10〓~10〓达因/厘米〓,从而很好地解释了等电子杂质降低位错密度的作用。
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It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.
众所周知,晶格失配和热应力失配是GaN异质外延中位错产生的主要原因;为此,我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试,其中尝试了侧向外延生长技术,得到了低位错密度(小于10〓/cm〓)、高质量的GaN外延层;尝试多低温缓冲层法,发现材料中的应力特性与生长系统和生长条件有关,材料中的应力与位错密度按相反方向变化;首次尝试高低温联合缓冲层法,材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大,从而导致随后高温GaN外延膜中位错密度降低,并且能够有效地抑制黄光峰。
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Thus. Treatment of CR1R2=C=CH2 (R1 = R2 = Me; R1 = H, R2 = n-Bu; R2 = Ph; R2 = cyclohexyl; R2 = cyclopentyl, R2 = C6H5O, R2 = 2-IC6H4O, R2 = 4-IC6H4O) with bisdiborn in the presence of Pd2 (5 mol %) and 3-iodo-2-methyl-2-cyclohexen-1-one (5 mol %) in toluene at 80 oC gave products bearing both vinylic and allylic boron moieties in good to excellent yields.
但我们发现可以使用Pd金属错合物与有机碘化物共同催化下的系统,来进行此种加成反应。溶剂的选择以甲苯为最佳,Pd错合物以没有强配位基存在为最好的选择。
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The critical shear stress unpinning the 60 dislocation from the ring-shaped hexagonal vacancy defect decreases as the temperature increases in the models, and approaches a stable value of 0.6GPa as the temperature is higher than 300K, bellow the misfit stress in common SiGe heterostructures, which indicates that the 60 dislocation can not be pinned by the ring-shaped hexagonal vacancy defects in this case.
模拟结果表明:使位错不被钉扎住的临界外加剪应力随着温度的上升而减小,在上述模型中当温度达到300K以上就稳定于0.6GPa附近,小于SiGe体系中的失配应力,说明空位缺陷不会成为60位错的钉扎点,仅会对其运动产生迟滞。
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The majority of tycoons implicated in the financial crisis emerged unscathed if somewhat poorer."Local economies are still godfather economies," writes Mr Studwell,"and the smartest, slickest godfathers were actually strengthened by the crisis."
尽管泰国出口放缓是引发金融危机的一个导火索,但实际上,是那些如今声名狼藉的&双重错配&(double-mismatch)投资者,这些投资者借入短期美元为项目融资,准备利用本币长期偿还。
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The coordinated COD of 3 and 4 can be replaced by carbon monoxide to yield the corresponding dicarbonyl species [(C,N-pyN^C-R) M2]BF4 (14, M= Rh; 15, M= Ir). Ligand substitution of 11a by phosphines and azide causes the de-complexation of pyridinyl-nitrogen donor to generate the corresponding carbene rhodium complexes [(C-pyN^C-Mes)RhPR3] (17a, R = Ph, 17b, R = Et) and [RhN3] (19), respectively, indicating the labile nature of steric-hindered pyridinyl-nitrogen donor.
螯合错合物的吡啶配位,可以容易被σ-予体,如卤离子、叠氮阴离子、膦试剂,置换;但是铑与铱金属螫合物与π-酸试剂,如一氧化碳、异腈,则发生COD被置的产物14a与16;与三甲基亚磷酸酯反应时,COD及吡啶均会被取代而得到单芽的三铑-碳烯错合物18;双膦化合物则会取代铑金属上全部的配位基。
- 推荐网络例句
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On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.
另一方面,更重要的是由于城市住房是一种异质性产品。
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Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.
气候直方图是将所收集的降水量测定值,分为几个相等的区间作为横轴,并将各区间内所测定值依所出现的次数累积而成的面积,用柱子排起来的图形,也叫做柱状图。
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You rap, you know we are not so good at rapping, huh?
你唱吧,你也知道我们并不那么擅长说唱,对吧?