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The results are in agreement with the previous work and offer a theoretical basis for the application of Zinc blende CdTe.

计算结果与其他文献结果吻合较好，为闪锌矿型CdTe的应用提供了理论依据。

This is because that the sample occur a transition of zinc blende structure to rocksalt structure.

导致金属化现象的本质是纳米晶发生了从闪锌矿到岩盐矿的压致结构相变。

The structure, electronic properties and optical properties of zinc blende CdS and

采用基于密度泛函理论的第一性原理赝势平面波方法，对闪锌矿结构 CdS 和 CdS：M

The calculated results show that zinc blende CdSe is direct semiconductor with the band gap of 0.52 eV.

计算结果表明闪锌矿型CdSe为直接带隙半导体，禁带宽度为0.52 eV。

CdSe QDs of zinc blende structure have been synthesized by a simple ethylenediamine-assisted method.

采用简单的乙二胺辅助方法合成出闪锌矿型结构的CdSe QDs。

The calculated results show that Zinc blende CdTe is direct semiconductor with the band gap of 0.671eV.

计算表明，闪锌矿型CdTe为直接带隙半导体，禁带宽度为0.671eV。

The results show that these particles are good crystal zinc blende with average size of 50 nm, and these particles also possess good IR transmittance in the range from 400 to 4 000 cm1 and good thermal stability in oxygen.

结果表明：该颗粒为结晶完全的闪锌矿，平均粒度为50 nm，且颗粒在400~4 000 cm1具有红外透光性，在纯氧气氛围中具有良好的热稳定性。

XRD and TEM data indicated that the crystal has cubic structure of blende with cell constant of α＝0.5390 nm in the range of 250～300 nm.

由XRD和TEM的结果显示，其结构为立方闪锌矿，晶格常数为α＝0.5390 nm。

The main mineral composition of the ore is zinc blende and lead glance.

矿石矿物成份主要为闪锌矿，次为方铅矿。

The electronic density of states on zinc blende CdTe, VCd system and CdTe doping Cu were analyzed with density functional theory.

研究中运用密度泛函相关理论，分析闪锌矿结构CdTe，Cd空位体系和掺Cu体系的电子态密度，计算得出Td场和C3V场下Cu2+ d轨道的分裂情况。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。