金属化

Quick surface metallization of titania powder was carried out by electroless chemical deposition of nickel.

采用镍的无电子化学沉积方法研究了纳米二氧化钛粉末表面的快速金属化。

This thesis gives an application of ANN approaches in polymer surface metallization for the sake of systemic research.

为了系统研究，本文将人工神经网络方法引入高分子材料表面金属化研究领域。

Metallization is the process of depositing a thin film of metal and patterning it to form the desired interconnection arrangement.

金属化是淀积一层薄薄的金属膜的工艺，将其制成模版用于形成所需的内部互连排列。

The difficulties in the thick film metallization of AlN caused by its structure were summarized and the main method to settle them were raised.

简要论述了AlN陶瓷由于自身结构特点而导致的其厚膜金属化的困难、提出了解决的主要方法。

The influences of different metallization ,different oxidation and different gas temperatures on coal and oxygen consumption were studied.

研究了金属化率、氧化度、荒煤气温度对煤耗、氧耗和煤气量的影响；通过对熔化气化炉热平衡分析，了解热量的收入与支出项；通过对还原煤气气体成分的分析图，判断该气体成分能否满足竖炉的需求，通过调整操作参数更新还原煤气的煤气成分。

Concerning industrial applications, electrolessplating is the preferred method of surface metallization of carbon nanofibers.

考虑到大规模的工业化应用，化学镀是纳米碳纤维表面金属化的首选方法。

Keywords: High Energy Density Plasma; Metallization; Modification of Interface

中文关键词：脉冲高能量密度等离子体；金属化；界面改性

The invention discloses a method to integrate single CMOS with bulk silicon microelectromechanical system, its technical project: 1 forming isolating groove: adopting deep-groove etching, and SiO2 and polycrystal silicon filling to realize the insulation of MEMS structure and CMOS circuit; 2 making standard CMOS circuit; 3 using SiO2 and Si3N4 as mask, etching silicon on the back until exposing SiO2 at the bottom of the isolating groove, to complete the thickness control for MEMS silicon structure layer; 4 completing metalizing the CMOS circuit and masking the MEMS structure: MEMS structure region uses Al as mask and CMOS circuit region uses thick photoetching glue as mask, using DRIE to release silicon structure.

本发明公开了一种将单片CMOS与体硅微机械系统集成的方法，其技术方案为：1形成隔离槽：采用深槽刻蚀，SiO 2 和多晶硅填充，实现MEMS结构和CMOS电路的绝缘；2完成隔离槽后进行标准CMOS电路的加工；3用SiO 2 和Si 3 N 4 作掩膜，从背面腐蚀硅，直至暴露出隔离槽底部的SiO 2 ，完成MEMS硅结构层的厚度控制；4完成CMOS电路金属化和MEMS结构掩膜：MEMS结构区用铝作掩膜，CMOS电路区用厚光刻胶作掩膜，用DRIE释放硅结构。用本发明方法不仅获得了较大的质量块，而且用本发明较高的深宽比制作出的结构电容，同时实现了体硅微机械与CMOS电路的集成，显著提高MEMS传感器的精度和稳定性，具有前沿性和重要实用价值。

Electroless Ni-P plating on pyrex glass was studied for subsequent metallization on the surface.

为实现对玻璃表面的金属化改性，试验研究了高硼硅玻璃表面化学镀镍工艺。

In this paper,the problem of quartz glass metallized was solved by electroless Ni-P alloy.

采用化学镀的方法解决电真空器件封接中的石英玻璃表面金属化问题。

According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.

曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。

The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.

稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。