退火的

Based on theσs1/8 -T curve and X-ray diffraction analysis, the changes in volume fraction,saturation magnetization and Curie temperature of α-Fe phase and residual amorphous phase with annealing temperatures as well as the correlation between them were determined.

研究了Fe(72.7)Cu1Nb2V(1.8)Si(13.5)B9非晶合金在不同温度（763—883K）退火1h后的热磁曲线借助于碰分析的方法，由σs1/B－T曲线并通过X射线衍射分析确定了合金中α－Fe相和剩余非晶相的体积分数、饱和磁化强度及Curie温度随退火温度Ta的变化及其相互关系。

It is seen from Fig.2 that the H concentration in the SiNx:H decreases upon annealing, however H may also effuse out towards the atmosphere.

经查验后的h分布在结构退火温度高达550 ℃，这是可见的H渗透在Si衬底上是增加相比，以作为沉积样本，因此，这是表示， H是发表对衬底上，无论是直接从A - Si ： H薄膜或从覆氮化硅：每小时它是从图2表示的H浓度在氮化硅： H的跌幅后，退火，但h也可能涌出了对大气中。

But for the BA43.4-PPO/ PPO blend whose miscibility was unknown, there were two endothermal peaks during the an-nealing,and the Tg values of the two peaks were very close to those of pure components of BA43.4-PPO or PPO.

而未知相容性的BA43.4-PPO/PPO在等温退火过程中出现两个吸热峰，此两峰的Tp值随退火时间的变化类似于各纯组分相应条件下的变化。

After thermal annealing at 2000C for 3 hours there's no atomic interdiffusion between copper and underlying contact metals and the devices showed little change in device performance.

经过摄氏两百度的高温退火三个小时以后，铜金属以及下层的接触金属间并没有金属原子交互扩散的现象；元件特性在经过热退火以后并未产生明显的变化。

It is found that there is an apparent structural difference between the sticking miler face area and the free face area of the ribbon annealed at 310℃, and a structural conformity of the ribbon annealed at 540℃.

通过对310℃退火样品的观测，可以发现薄带的贴辊面区和自由面区存在着非常明显的结构差异；而540℃退火样品的AFM观测结果则显示这种差异并不明显。

In this implementation, the evolutionary algorithm is hybridized with the simulated annealing algorithm and the hill climbing heuristic. The main aspects are as follows. The Metropolis criterion of the simulated annealing algorithm is introduced to select the offspring in order to make the algorithm more effective to escape the local optimum. In terms of the hill climbing heuristic, the local normal perturbing mutation operator based probability selecting is developed to enhance the local searching of the algorithm.

其主要工作是将进化算法与模拟退火算法及爬山方法相组合，引入模拟退火算法中Metropolis接受准则选择子代，提高算法跳出局部最优解的能力：借鉴爬山方法思想，构造了基于概率选择的局部正态摄动变异算子，以强化进化算法局部细搜索能力；同时进化算法以多种群方式实现，在降低计算时间的同时提高算法收敛到全局最优解的概率。

In the paper, the present state of ultra-fine-grained materials, severe plastic deformation and Asymmetrical-ARB are introduced in detail; the craft to fabricate ultra-fine-grained copper using Asymmetrical -ARB is studied fully; the problem of combination of interface is settled; the affect of homogenizing annealing、 annealing and rolling method on mechanical properties of materials prepared by Asymmetrical-ARB is discussed and analyzed when control parameters of rolling mill such as the press—ratio、 the asynchronous rate、 rolling—speed are fixed, and a kind of craft that meets to requirement of experiment is made out.

本文对超细晶、大塑性变形技术、异步轧制目前国内外研究进行了详细的介绍；对异步叠轧方法制备超细晶铜工艺做了较为细致的研究：解决界面复合问题；在压下率、异步比、轧制速度等轧机控制参数固定条件下，探讨了均匀化退火工艺、去应力退火工艺和轧制方式对异步叠轧材料力学性能的影响，并进行了分析，制定出符合实验要求的轧制工艺。

Based on the thermionic emission theory, a method to extract parameters of Si SBD is given in this study. Using this model, we tested the characteristics of devices and extracted the parameters of two kinds of samples. The ideality factor is 1.01 and 2.13 respectively. The zero-field barrier height is 0.70eV and 0.72eV. The surface state density is 5.5×10~(15)cm~(-2)eV~(-1) and 4.3×10~(12)cm~(-2)eV~(-1). The interface oxide capacitance is 9.0×10~(-4)F·cm~(-2) and 5.4×10~(-6)F·cm~(-2). The neutral level of the surface states is 0.81eV and 1.1eV. The reverse breakdown voltage is 101V and 56V.

本研究在热电子发射模型的基础上，建立一种提取Si基SBD器件特性参数的理论模型，基于这个模型，对两种样品的性能进行测试，并计算出退火和未退火样品的理想因子分别为1.01和2.13、零电场势垒高度分别为0.70eV和0.72eV、表面态浓度分别为5.5×10~(15)cm~(-2)eV~(-1)和4.3×10~(12)cm~(-2)eV~(-1)、界面层电容分别为9.0×10~(-4)F·cm~(-2)和5.4×10~(-6)F·cm~(-2)、表面态中性能级为0.81eV和1.1eV、反向击穿电压101V和56V。

As to effects of 7 % Mn addition, post annealing and DMS layer thickness of Mn-doped LT-GaAs on their magnetic properties in three-layers structure LT-(Ga, MnAs /LT-GaAs/GaAs, the results show that the Curie temperature of DMS can be greatly increased by a decrease in thickness and via annealing treatment, and indicates the greatest Tc for (001) GaAs substrate orientation.

有关生长掺杂7 ﹪Mn，后退火处理和DMS厚度对的LT-As稀磁半导体，LT-(Ga， MnAs / LT-GaAs / GaAs三层结构磁性之研究。结果显示：DMS的居里温度随著膜厚度下降与退火处理，而大幅的上升，并且在GaAs(001)方向的基材具最高Tc。

Li lines related to Di-center, which can be observed in all SiC polytypes after various kinds of particle bombardments or irradiations and can withs

在700℃温度退火后的样品中观察到D_I-center，该中心在幅照或粒子轰击后的SiC的各种多型体中都观察到，并能经受高达1700℃温度的退火。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。