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Experimental outcomes validate that improved methods reasults are better than original algorithms under the same anneal ratio and can attain perfect matching reasults all the same when anneal ration is reduced befittingly.

实验也验证了在相同退火率的情况下能够得到比改进前算法好的匹配结果,并且适当提高退火率时仍然能够得到比较理想的匹配结果。

The sample with x =0.007 shows largest magnetization and coercivity. Increasing the annealing temperature to 800℃ results in decreasing of both magnetization and coercively,and the paramagnetism was enhanced.

磁性测量表明,大气条件下600℃退火后的样品,呈现出室温铁磁性;而800℃退火后的样品,其室温铁磁性显著减弱,并表现为明显的顺磁性。

This text to 1 kind from calculator automatically control and carry on the electronics dollar that the data collect a spare part a total quantity Fu to shine on the spot test system to carry on pulling a description, and pass application that system to the CMOS numerical electric circuit CC4069 carry on with total the amount of synchronous electricity parameter's on-line diagraph, and radiate a quickly collect of the countermarch fire data, study pull CMOS numerical electric circuit a total quantity Fu shine on on-line Fu to shine on to respond to characteristic and Fu to shine on behind fast time back a fire effect.

本文对一种由计算机自动控制并进行数据采集的电子元器件总剂量辐照现场测试系统进行拉描述,并通过应用该系统对CMOS数字电路CC4069进行与总剂量同步的电参数在线测量,以及辐射后退火数据的快速采集,研究拉CMOS数字电路总剂量辐照在线辐照响应特性和辐照后快速时间退火效应。

In this thesis, a new detection method, Network Intrusion Detection based on Unsupervised Clustering and Chaos Simulated Annealing algorithm, is proposed. NIDCCSA utilizes the ergodic property of chaos to complete the perturbation of states. Therefore, simulated annealing algorithm based on chaos is more likely to converge to the globally optimal solution and enhance the detection rate.

论文中提出使用聚类和混沌模拟退火算法进行网络入侵检测——NIDCCSA算法,NIDCCSA算法充分利用了混沌的遍历性特点进行状态的变换,这样的混沌模拟退火算法更加可能收敛到全局最优解,从而提高检测率。

The epitaxial ZnO films are prepared on Al2O3 substrates by using helicon wave plasma assisted sputtering technique. The as-grown and annealed films showed different in-plane orientations.

采用螺旋波等离子体辅助溅射沉积法在衬底Al2O3的(0001)面上沉积ZnO薄膜,所生长的薄膜在未退火和退火时表现出不同的平面内取向。

The combination methods of serializer for SA and Powell algorithms and incrustation for SA and simplex algorithms are given in this paper, and their combined steps elaborated for easy programme.

给出了模拟退火算法与单纯形法的镶嵌式结合方式以及模拟退火算法与鲍威尔法的串行式结合方式,并对其结合步骤进行了详细的阐述,以便于编程实现。

And the reflectance of HR region increased but the transmittance changed negligibly little with the increasing of the annealing temperature.

采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析,发现随着退火温度的升高散射损耗有所增加。

With the addition of a nucleator, the melting point and crystallizing temperature of iPP rise, the induction period of crystallization is shortened, the crystallizing gets faster and the crystallinity increases.

随着退火温度的升高和退火时间的延长,iPP薄膜的熔点升高、片晶厚度和结晶度逐渐增加,弹性回复率逐渐增大,拉伸强度增大,断裂伸长率减小。

The reasons of Cold-rolled strip sticking during cover annealing are analysed, it points out that the reciprocal transformation of Fe and iron oxide during annealing is the main reason, and prevention measure is put forward.

对冷轧带钢在罩式退火过程中产生局部粘结的原因进行了分析,指出在退火过程中,铁和氧化铁的相互转化是产生粘结的主要原因,并提出预防措施。

The resistivity of the polysilicon films could be controlled under different dopant concentration and different anneal temperature. The changes of resistance with the temperature were measured. The temperature coefficient of resistance value was about 1‰ when the boron concentration was 5X 10 /cm and the anneal temperature was 900℃.

2制作了不同掺硼浓度和退火温度的多晶硅电阻,测试了阻值随温度的变化,在掺硼浓度和退火温度分别为5×10~(14)/cm~2和900℃时得到了接近1‰的TCR值。

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On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面,更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值,分为几个相等的区间作为横轴,并将各区间内所测定值依所出现的次数累积而成的面积,用柱子排起来的图形,也叫做柱状图。

You rap, you know we are not so good at rapping, huh?

你唱吧,你也知道我们并不那么擅长说唱,对吧?