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Genetic algorithm and three kinds of hybrid genetic algorithms are presented for parallel machines earliness/tardiness production line scheduling problem.

三。对并行机器生产线提前/拖后调度问题提出了遗传算法和三种混合遗传算法(基于进化交叉的遗传算法、基于模拟退火的遗传算法、基于进化交叉及模拟退火的遗传算法)。

In this paper, the free surface and the sticking miler surface of the ribbons after corrosion in HF solution at different corrosive depths were observed by AFM.

将310℃和540℃退火的样品在HF酸溶液中进行腐蚀,获得不同腐蚀深度的腐蚀表面,再用AFM观测其表面形貌,则发现:在310℃退火样品的腐蚀表面,自由面和贴辊面形貌各自随腐蚀深度的变化而变化,并且两表面形貌之间在腐蚀前期有差异,但后期无明显不同;而540℃退火样品的两个腐蚀表面,则不存在这样的变化和差异。

However, it is difficult for the quartz substrate to scale-down by photolithography. In this article, we develop another type of piezoelectric material, PbZrxTi(1-x)O3, as a thin film by sol-gel route to replace the quartz crystal as a resonator. The novel hydrothermal annealing with microwave system is proposed to substitute the conventional furnace annealing.

本研究则是用同样具有压电性质的材料锆钛酸铅(PbZrxTi1-xO3),以溶胶-凝胶法制成压电薄膜,来取代传统的石英晶体;再以微波反应系统进行水热式退火,来取代传统高温制程上的热处理方式,同时根据实验结果,进一步推论水热式退火的反应机制。

In order to increase the local searching ability of simulated annealing algorithm,the simplex method and Powell method are introduced.

为了增强模拟退火算法的局部搜索性能,将局部搜索能力较强的单纯形法和鲍威尔法引入模拟退火算法当中,形成了基于模拟退火的全局混合反演方法。

Meanwhile the mutative trend of nitrogen PL intensity is fit to that of isothermal annealing treatment with increasing annealing time, even though the variation is small.

当退火温度为1573K时,随着退火时间的延长,PL结果与等时退火的变化趋势一致,但变化幅度不大。

The distribution of prolyl peptide bond conformations, Ramatrandran distribution, atom distance of main chain, distribution of conformation energy after 300 times simulated annealing are analyzed.

通过模拟退火的分子动力学方法,对2种BPP分子的4种构象(cis-BPP-5b、trans-BPP-5b、cis-BPP-9a、trans-BPP-9a)在经过300次模拟退火后的脯氨酸肽键的构象分布、Ramatrandran分布、主链上原子距离、构象能量的分布进行了统计分析。

The Si-rich SiO2/p-Si structure has been fabricated with two-target alternative magnetron sputtering technique.After the Si-rich SiO2/p-Si sample having been scored by diamond tip on the front surface and annealed at 800℃ in N2 the photoluminescence spectrum is found quite different from that from the unscored one,which having been annealed in the same condition.

以磁控溅射方法于p-Si上淀积富硅二氧化硅,形成富硅二氧化硅/p-Si结构,用金刚刀在其正面刻划出方形网格后在N2气氛中退火,其光致发光谱与未刻划的经同样条件退火的对比样品的PL谱有很大不同。

The current-voltage curves and deep level transient spectra of samples were measured.

随后,对为退火和退火的样品进行了电流-电压,深能级瞬态谱的测量。

Cold rolling and recrystallisation textures were studied systematically by X-ray.

研究结果表明:Ni-5%W基带是一较好的组分,通过大的冷轧形变量、较高的退火温度和两步退火的方式,有利于在Ni-5%W基带中形成单一的、强的立方织构。

The results show that the heavier cold rolling reduction; higher temperature of annealing and a two-step recrystallisation annealing are beneficial to the forming of cube texture in Ni-W substrates.

研究结果表明:Ni-5%W基带是一个比较好的组分,通过大的冷轧形变量、较高的退火温度和两步退火的方式,有利于在Ni-5%W基带中形成单一的、强的立方织构。

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