退火

Electrodeposited Ni-Fe permalloy foils was annealed under hydrogen atmosphere at 850,1 000 and 1 150 ℃ for 5 h, respectively.

对电沉积得到的Ni-Fe坡莫合金箔，在氢气气氛下进行退火处理，退火温度分别为850，1000和1150℃，保温时间均为5h。

In the algorithm, a three-dimensional permute matrix of binary variables is used to map the problem to the neural network, the energy function including object item and overlap constrained item is presented, and then iteration procedure is put into practice with the mean annealing equation.

提出了一个基于均场退火方法的任意单元布局算法，用一个三维二值换位矩阵将问题映射为神经网络，建立包含重叠约束和优化目标的能量函数，再用均场退火方程迭代求解。

In the HGA , heuristic algorithm is used to produced initial population , self-adaptive parameter are used in copy operator, crossover operator and mutation operator .Simulated annealing algorithm is also cited ,and only some excellent chromosomes are operated by SA . In this way, HGA could improve its search ability at cost of a little more run time.

混合遗传算法在产生初始种群时引入启发式方法，采用自适应遗传参数和交替使用两种交叉算子；在搜索方式中加入模拟退火机制，采用只对部分优秀染色体进行退火操作的新策略，这样在保证增强寻优能力的情况下尽量减少运算量。

The reasons of Cold-rolled strip sticking during cover annealing are analysed, it points out that the reciprocal transformation of Fe and iron oxide during annealing is the main reason, and prevention measure is put forward.

对冷轧带钢在罩式退火过程中产生局部粘结的原因进行了分析，指出在退火过程中，铁和氧化铁的相互转化是产生粘结的主要原因，并提出预防措施。

In the paper, the present state of ultra-fine-grained materials, severe plastic deformation and Asymmetrical-ARB are introduced in detail; the craft to fabricate ultra-fine-grained copper using Asymmetrical -ARB is studied fully; the problem of combination of interface is settled; the affect of homogenizing annealing、 annealing and rolling method on mechanical properties of materials prepared by Asymmetrical-ARB is discussed and analyzed when control parameters of rolling mill such as the press—ratio、 the asynchronous rate、 rolling—speed are fixed, and a kind of craft that meets to requirement of experiment is made out.

本文对超细晶、大塑性变形技术、异步轧制目前国内外研究进行了详细的介绍；对异步叠轧方法制备超细晶铜工艺做了较为细致的研究：解决界面复合问题；在压下率、异步比、轧制速度等轧机控制参数固定条件下，探讨了均匀化退火工艺、去应力退火工艺和轧制方式对异步叠轧材料力学性能的影响，并进行了分析，制定出符合实验要求的轧制工艺。

The membranes were transformed from amorphous phase toα-Al_2O_3 crystalline phase by 5 hours annealing at 800℃and 910℃. At the same time, aluminum and amorphous alumina were found by XRD patterns. The membrane had little change in front side after 5 hours annealing at 800℃, while the back side was transformed from ruleless distributing to cluster distributing.

膜在800℃及910℃下退火5h后，由非晶态的氧化铝转变成为晶态的α-Al_2O_3，但同时也有铝单质和无定形结构的氧化铝存在，膜在800℃下退火5h后的正面没有太大变化，背面由无规则的分布变为簇状分布。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

However, it is difficult for the quartz substrate to scale-down by photolithography. In this article, we develop another type of piezoelectric material, PbZrxTi(1-x)O3, as a thin film by sol-gel route to replace the quartz crystal as a resonator. The novel hydrothermal annealing with microwave system is proposed to substitute the conventional furnace annealing.

本研究则是用同样具有压电性质的材料锆钛酸铅(PbZrxTi1-xO3)，以溶胶－凝胶法制成压电薄膜，来取代传统的石英晶体；再以微波反应系统进行水热式退火，来取代传统高温制程上的热处理方式，同时根据实验结果，进一步推论水热式退火的反应机制。

The results showed that RSAP used two primers of 18 nucleotides in which starting at the 3' end of each primer were restriction site sequences (4-6 bases),followed 12-14 bases of arbitary sequence, the differences between two primers were restriction sites and filler sequence; PCR am-plification was run for the first 5 cycles with an annealing temperature of 35℃, followed by 35 cycles with an annealing temperature of 48℃; the PCR reaction of 25 μL included 20ng DNA templates, 2.5mmol/L of Mg(superscript 2+), 0.2 mmol/L of dNTP, 1.5U of Taq DNA polymerase, 600nmol/L of each primers. RSAP is a new maker technique with simplicity, moderate throughput ratio and reliability. RSAP is of good reprodicibity and broad application.

结果显示，RSAP技术的引物为2条长度均为18bp的引物，引物的3'端为4~6个碱基的限制性酶切位点序列，接着是12~14个碱基的随机序列，2条引物的限制性位点和随机序列不同：PCR扩增的前5个循环采用35℃的退火温度，随后的35个循环采用48℃的退火温度；在25μL反应体系中，模板DNA用量为20ng，Mg(上标 2+)浓度为2.5mmol/L dNIPs浓度为0.2 mmol/L，Tap DNA聚合酶用碳为1.5U，2条引物浓度均为600mmol/L；RSAP技术重复性好，适用性广泛，是一种操作简便、产率中等、稳定可靠的DNA标记技术。

The resistivity of the polysilicon films could be controlled under different dopant concentration and different anneal temperature. The changes of resistance with the temperature were measured. The temperature coefficient of resistance value was about 1‰ when the boron concentration was 5X 10 /cm and the anneal temperature was 900℃.

2制作了不同掺硼浓度和退火温度的多晶硅电阻，测试了阻值随温度的变化，在掺硼浓度和退火温度分别为5×10~(14)/cm~2和900℃时得到了接近1‰的TCR值。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。