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退火

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The activation energy distribution during 25, 100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices are calculated by annealing model.

根据退火模型计算了CMOS器件辐照后25、100 oC等温和25~250 ℃等时退火过程中激发能的分布。

Contrast measures acerbity Strontium of anneal around titanium radical piece macle sways curve, show anneal can improve crystal quality apparently, be helpful for implementation exceeding smooth STO base piece treatment.

对比测量退火前后钛酸锶基片的双晶摇摆曲线,表明退火可以明显改善晶体质量,有利于实现超光滑STO基片的加工。

Before version of the process flow is: that the original steel plate, that is, the original mould, Yin, maintop pattern concave, hardened-overvoltage round steel shaft, that is, cavity, positive and maintop pattern convexes-round steel shaft had hardened-Nano-imprint lithography version submodules, Yin, maintop pattern concave-skinpass printing layouts — chromeplate — students'computer proofing-business card printing and membership card.

功版的工艺功程是:邮票原钢版,即原模,晴图、版纹凹形,不退火强硬——功不抬圆钢轴,即母模,阳图、版纹凸形——圆钢轴不退火强硬——功不抬印版,即子模,晴图、版纹凹形——裂缝版面——印版镀铬——上机打样——制卡和会员卡制作。

It is found that there is an apparent structural difference between the sticking miler face area and the free face area of the ribbon annealed at 310℃, and a structural conformity of the ribbon annealed at 540℃.

通过对310℃退火样品的观测,可以发现薄带的贴辊面区和自由面区存在着非常明显的结构差异;而540℃退火样品的AFM观测结果则显示这种差异并不明显。

And the reflectance of HR region increased but the transmittance changed negligibly little with the increasing of the annealing temperature.

采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析,发现随着退火温度的升高散射损耗有所增加。

It was found that the partial pressure of Hg could influence As diffusion and Hg vacancies in epilayers assisted fast diffusion of As. The As diffusion at a lower temperature of 240℃/24~48 hrs was negligibly slow.

研究表明在低温段的240℃/24~48小时的退火中As的扩散非常有限,对样品中As的浓度分布影响不大,而在高温段380℃/16小时和440℃/30分钟退火中,As扩散较为明显,能使原来的PN突变结变缓。

The electrical characteristics of NiSi gate metal oxide semiconductor capacitors formed at various rapid thermal annealing temperatures were studied.

测量了不同退火温度形成的NiSi材料的方块电阻,当退火温度大于400 ℃时,方块电阻达到最小,并在400—600 ℃范围内稳定。

In this implementation, the evolutionary algorithm is hybridized with the simulated annealing algorithm and the hill climbing heuristic. The main aspects are as follows. The Metropolis criterion of the simulated annealing algorithm is introduced to select the offspring in order to make the algorithm more effective to escape the local optimum. In terms of the hill climbing heuristic, the local normal perturbing mutation operator based probability selecting is developed to enhance the local searching of the algorithm.

其主要工作是将进化算法与模拟退火算法及爬山方法相组合,引入模拟退火算法中Metropolis接受准则选择子代,提高算法跳出局部最优解的能力:借鉴爬山方法思想,构造了基于概率选择的局部正态摄动变异算子,以强化进化算法局部细搜索能力;同时进化算法以多种群方式实现,在降低计算时间的同时提高算法收敛到全局最优解的概率。

With the addition of a nucleator, the melting point and crystallizing temperature of iPP rise, the induction period of crystallization is shortened, the crystallizing gets faster and the crystallinity increases.

随着退火温度的升高和退火时间的延长,iPP薄膜的熔点升高、片晶厚度和结晶度逐渐增加,弹性回复率逐渐增大,拉伸强度增大,断裂伸长率减小。

According to the microstrure and properties, it is concluded that the optimal homogerinzing process is 400 ℃×15 h.

根据均匀化退火后的组织与性能变化确定了最佳的退火工艺为400℃×15h。

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