退火

In this paper,a portfolio choice model is proposed based on mean absolute deviation.

用绝对离差刻画了风险，提出基于绝对离差的证券组合投资模型，并用模拟退火算法求解。

Adjusting the probability of acceptance could control the speed of chaos simulated annealing, and influence the rate of convergence.

接收概率衰减速度的调节可以控制混沌退火的速度，从而影响网络的收敛速度。

In contrast, the concentration of deep defects is very low in annealed undoped InP and the doping of Fe acceptor by diffusion acts as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance.

相比之下，非掺退火半绝缘InP材料中深能级缺陷浓度很低，通过扩散掺入的铁受主作为唯一的补偿中心钉扎费米能级，因而表现出优异的电学性质。

Homogeneous or heterogeneous base material is selected; an alternately superimposed barrier layer and an alternately superimposed recessed layer are grown and formed at the extension of the base material; donor impurity and acceptor impurity are doped in the interface between the barrier layer and the recessed layer and in the interface between the recessed layer and the barrier layer, and the p type group III nitride material doped at a position selecting superlattice is obtained.

选择同质或者异质的基质材料；在基质材料上外延生长形成变换叠加的垒层和阱层，在垒层与阱层的界面和阱层与垒层的界面掺入施主杂质和受主杂质，得选择超晶格位置掺杂的p型III族氮化物材料，其中，每个生长周期的步骤为：生长带隙较宽的垒层，同时掺入受主杂质；生长施主杂质或受主杂质δ掺杂层；生长非掺的带隙较窄的阱层；生长受主杂质或施主杂质δ掺杂层；在N 2 气氛下对所得的选择超晶格位置掺杂的p型III族氮化物材料退火，即得目标产物。

The effect of annealing on mechanical properties of ADI was studied.

研究了预退火处理对奥贝球铁力学性能的影响。

The results are as follows: The start recrystallization temperature of Mo-C is about 950℃ and the process is finished around 1200℃, and during this process, the transverse bending property is gradually improved and the elongation percent of the transverse bending reached max value (about 5%) at 1100-1200℃.

研究结果表明：Mo-C棒再结晶开始温度在950℃左右，在1200℃时基本形成了等轴晶组织；当退火温度低于1200℃时，随着退火温度的升高，合金的横向弯曲性能逐渐提高，在1100~1200℃时，合金的横向弯曲延伸率最高，达到5%。

Based on these studies, the physical mechanisms of different energy depositions on the structures and properties of the films are compared.

用弹性反冲分析技术，研究了真空等时热退火时膜内氢含量与退火温度的关系。

Cold rolling and recrystallisation textures were studied systematically by X-ray.

研究结果表明：Ni-5％W基带是一较好的组分，通过大的冷轧形变量、较高的退火温度和两步退火的方式，有利于在Ni-5％W基带中形成单一的、强的立方织构。

The results show that the heavier cold rolling reduction; higher temperature of annealing and a two-step recrystallisation annealing are beneficial to the forming of cube texture in Ni-W substrates.

研究结果表明：Ni-5%W基带是一个比较好的组分，通过大的冷轧形变量、较高的退火温度和两步退火的方式，有利于在Ni-5%W基带中形成单一的、强的立方织构。

Draw a conclusion, a better parameters was found in fabrication of polycrystalline silicon thin film on glass at middle temperature: amorphous silicon film to be annealed were deposited at a certain temperature on glass substrate and fused quartz by plasma enhanced chemical vapor deposition method, using SiH_4, H_2 mixture.

具体沉积工艺参数：真空度5.6×10~(-4)pa，沉积室中电极间距2cm，工作气压133.3Pa，氢稀释比98％、衬底温度350℃、射频功率60W；退火条件：850℃下光退火5分钟。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。