迁移

Electrokinetics can enhance the mass-transfer process, thus remove the heavy metal to a given direction fast and efficiently; meanwhile electrokinetics can combine other remediation technology, thus possessing broad application foreground.

电动技术能够强化土壤物质的传质过程，能够高效、快速定向迁移土壤中重金属离子达到去除的目的；同时电动技术可以与其它修复技术结合发展出系列组合修复技术，具有广泛的应用前景。

The electromotive force of the cell was investigated at temperature between 800 and 1000℃.

由实测电动势与Nernst方程导出的理论电动势之比求得的氧离子迁移数在测量温度范围内都大于0.96，并随着温度的升高而逐渐增大。

The carbon based materials have low electron affinity even negative electron affinity,and have the good ability of eradiating electrons in electric field.

其中非晶碳膜具有好的化学稳定性和热稳定性、高的熔点和热导率、小的介电常数、大的载流子迁移率和高的击穿电压，是一种很有前途的场发射冷阴极材料。

These materials have excellent chemical and thermal stability, high melting point, high thermal conductivity, high breakdown voltage and large carrier mobility rate especially the smaller electron affinity and potential or even a negative electron affinity, and the situation has greatly reduced the market launch of the threshold voltage, therefore, Field emission of such material will have a very vast potential for development and application prospects.

这些材料具有良好的化学与热稳定性、高熔点、高热导率、高击穿电压及大的载流子迁移率，特别是较小的电子亲和势甚至是负的电子亲和势，大大降低了场发射的阈值电压，因此，这类场发射材料将有着极为广阔的发展潜力及应用前景。

The reason is that the energy deposited by heavy ions can directly or indirectly migrate along DNA strands, and can firstly break the bonds of highest electron affinity and lowest ionization potential.

重离子辐照沉积的能量可以直接或间接地沿DNA链迁移，从而使得DNA分子上相对较弱或亲电性较强的化学键优先断裂。

Silicon carbide is a promising semiconductor with wide band-gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity.

碳化硅是一种新型半导体材料，具有禁带宽、电子饱和迁移速度高、击穿电场强度高、热导率高等特点。

The values obtained in thepresent study for the electron energy distribution function,drift velocity,ionizationcoefficient and attachment coefficient,etc.,are calculated and compared with theexperimental results reported in the literature,and the comparison is also carried outwith the values obtained from the two different types of fields.

应用Monte Carlo模拟法研究了氧气放电的电子参数，得到了在均匀电场中的电子能量分布、平均能量、漂移速度、电离系数、附着系数、迁移率及扩散系数随时间、电场强度的变化关系，并与文献上的实验结果进行了比较。

Secondly, the spatial distribution of transport properties of GaP and InP bulks, including electric fields, drift velocities and mobility, are calculated at different applied voltages and an overshoot phenomena in the electron densities and drift velocities of the GaP and InP bulks under the high electric field was found.

同时计算了GaP和InP体材料输运性质，分析了它们的电场强度、漂移速度和迁移率在不同偏置电压下的空间分布，以及电子密度和漂移速度在高电场下的过冲现象。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

The GaAs, InP-based III-V compound semiconductors, which are known as their wide band-gaps, direct-band transition, high photoelectric conversion efficiency and high saturated electron drift velocity and mobility, become increasingly important and have been widely used in microelectronics and optoelectronics.

以GaAs，InP为主Ⅲ-V族化合物半导体材料具有很宽的带隙，大都为直接跃迁型能带，光电转换效率较高，以及具有很高的饱和电子漂移速度和迁移率。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。