轰击

The fragmentations of alkylamine ions C~nH~2~n~+~1NH~2^+ produced from 18 kinds of alkylamine salts by the electron impact ionization and protonated alkylamine C~nH~2~n~+~1NH~3^+ produced from them by the chemical ionization were examined using collision- induced dissociation.

应用碰撞诱导解离技术研究了电子轰击方法产生的脂肪胺分子离子和化学电离方法产生的质子化脂肪胺分子的碎裂反应。

We have shown that it is possible to create a radioactivity characterized by the emission of positive or negative electrons in boron and magnesium, by bombardment with alpha rays.

我们已经展示了人工放射现象的可能性，这种放射现象的特征是用以射线轰击用咄硼和镁中的正电子或负电子。

Fifteen years later, by bornharding with alpha rays certain of the lighter atoms, nitrogen and aluminium for example, Lord Rutherford demonstrated the ejection of protons, or positively charged hydrogen nuclei

15年后他用a射线轰击某些较轻的原子，如氮原子和铝原子，向人们展示质子，即带正电荷的氢核的排斥现象。

Element; discovered by bombarding americium with helium.

一种放射性超铀元素，在用氦轰击镅时发现。

A radioactive transuranic element; discovered by bombarding americium with helium.

一种放射性超铀元素，在用氦轰击镅时发现。注意，注意力集中

When a neutron hits an atomic nucleus, the nucleus can absorb the neutron and become unstable.

当一个中子轰击一个原子核的时候，这个核可能会俘获这个中子，从而变的极不稳定。

The crystalline defects of metallic substrate can promote the formation of multi-crystal thin films. In contrast, the films on the Si single crystal are basically amorphous; The hardness of films are mainly determined by N concentration. The highest hardnesses of Si〓N〓 and TiN films ware obtained at 1. 1 of N/Si and 0.96 of N/Ti respectively. The hardness of Si〓N〓 film decreased dramatically when the free silicon atoms present.

发现薄膜中N原子百分含量主要受氮离子束流和氮气分压的控制，随着氮离子束流和氮气分压的提高，N/Si和N/Ti原子比增加；膜的组织结构则主要受轰击离子束压和基体种类的影响，高的轰击束压可以抑制薄膜的择优取向，金属基体上的晶体缺陷使薄膜易于形成多晶，而单晶硅上的薄膜基本上为非晶态；薄膜的硬度受氮含量的影响最大。

Another option is "Bombard the settlement with your trebuchets". Then you get to choose "Bombard for 1 day - 10 days".

另一个选项是用抛石机轰击城镇，并选择轰击的时间长度(1-10天)。

A high-quality neon tube manufacturing process include: bombardment degassing, vacuum and maintain vacuum and inert gas filled into the three major areas, while the bombardment degassing is the primary link, if a link is not sure is good, even if the neon vacuum pumped,"ultra-high vacuum", the use of neon tubes can not be long.

一根优质的霓虹灯管的制作工艺包括：轰击去气、抽真空及保持真空、充入惰性气体三个大环节，而轰击去气是首要环节，如果在个环节没把握好，就算把霓虹灯的真空抽到&超高真空&，霓虹灯管也使用不了多长时间。

This paper presents conductive polymer molecular materials with insulating powder, mixed into the deployment of surge suppressors for low capacitance of paste, while the component design concept is based on the field of passive components, manufacturing process to make the basic theory to design the protective components, the main use of the existing ceramic substrate for the component body structure design, screen design in the body through the structure of the gap at the top of the printing layer of a different conductors, and then to learning to know the printing process technologies approach the low capacitance of the surge suppressor paste cover the gap in the two conductors, and by the resistance of plastic burning process technology, the temperature of sintering parts made of electrostatic protection element, and this protection through the external ESD components in bombardment tests, measurement of capacitance electrostatic discharge after bombardment, Trigger voltage and leakage current data, and the volume measured by the results of future discussion of the layout of this different style of work in the same area, different clearance, solid content and temperature than the next, for the attainment of performance components, a low capacitance ESD protection devices with low breakdown voltage requirements and to chip-based protection devices can be designed to integrate with the advanced Integrated Circuits or used independent of the electrostatic protection element in the system.

本文提出高分子导电分子材料搭配绝缘粉末，调配混合成适用於低电容突波抑制器之PASTE，而元件设计概念是以被动元件制程领域作基础理论去设计此防护元件，主体利用现有陶瓷基板为元件本体结构设计，在经由网版设计在本体结构上方印刷一层不同的间隙导体，再以习知印刷制程技术方式，将低电容突波抑制器之PASTE覆盖在两导体的间隙内，并经由电阻制程习知塑烧技术，将元件烧结适当温度制成静电防护元件；而此防护元件在经外加静电放电轰击测试后，量测静电放电轰击后的电容、Trigger voltage及漏电流相关数据，并藉由测结果讨此同的布局样式，在相同工作区面积、不同间隙、固含量与温度比下，对於元件效能是否达到静电防护元件低电容与低崩溃电压的需求，并藉此晶片型防护元件可设计整合於先进积体电或应用於独系统的静电防护元件中。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。