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表面电荷密度

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On the other hand, the electrical properties of MOSFETs such as IDS-VDS and IGS-VGS were investigated. The interface quality of high-κ thin films and substrate interface was investigated through subthreshold swing, gated-diode character-istics, and charge pumping methods. After analysis, some important parameters, such as the density of interface trap per area, effective capture cross section, and the surface recombination velocity (s0), were extracted.

对於金氧半电晶体的电气特性研究包含:IDS-VDS和IGS-VGS,并利用次临界摆幅、闸二极体(gated-diode)与电荷汲引法来研究高介电系数薄膜和矽之间的界面特性,经由分析可得界面缺陷密度、界面缺陷等效捕获截面积及载子表面复合速率(s0)等等的重要参数。

Theoretical predict is given, that electron density of inner shell at nuclear surface decreases and energy level also decreases with increasing of charge state, nuclear lifetime increases slightly with previous reason but increases with a jump when energy level drops to a critical value.

理论预言了随着电荷态的增加,内壳的电子在核表面的电子密度降低,内壳电子能级也降低,不稳定原子核的寿命由于前一原因而缓慢增加,但当内壳电子能级降到特殊能量时产生剧烈增加。

The electret can reduce surface charge density of 3T3 cell and induce extracellular Ca2+ to flow into 3T3 cell which lead to cell apoptosis.

负极性驻极体能减少3T3细胞表面的电荷密度,诱导3T3细胞外的钙离子流入细胞内,并由此诱导细胞凋亡。

Secondly, effects on the structure and topographies of self-assembled enzyme films of assembling conditions that were substrates with different charge density, assembling time, pH value and concentration of enzyme solution, were studied.

其次探讨酶自组装过程中酶溶液的浓度、pH值、组装时间以及基材的电荷密度等因素对酶/PET-CO〓自组装膜的表面形态结构与特性的影响。

In this paper, the flotation rule and behavior of kyanite一group polymor-phous minerals were studied in modified Hallimond tube in detail,Further-more, the energy change of collector/mineral systems before and after ad-sorption and the net charge densities of the atoms on the minerals surfaceswere calculated by use of quantum chemistry ,The flotability of the mine-rals was successfully explained.

进一步应用量子化学CNDO/2法计算了捕收剂在矿物上吸附的能量变化和矿物表面原子的电荷分布密度,并根据量子化学计算结果成功地解释了蓝晶石类同质异相矿物的浮选规律。

The method uses leakage currents of all conductor segments and the surface charge densities on the surface of finite volume as unknown variables.The number of unknown variables used in this method is much less than those in other methods,and the grounding system buried in multi-layer soil with arbitrary numbers of layers can be analyzed.

这种方法以导体上的漏电流和有限体积材料表面的电荷密度为待求变量,与国际上其他方法相比,该方法使用的未知量数显著减少,并且可以分析复杂多层土壤中的接地网性能。

Thermochemical Hole Burning memory uses the STM heating effect to induce a localized thermochemical decomposition of Charge Transfer Complexes, evolving the low-boiling point donor component and creating nanometer-sized holes on the crystal surface. In this thesis, we focus our research on the material synthesis and storage mechanism of THB memory.

热化学烧孔(Thermochemical Hole Burning,THB)技术是基于STM的超高密度信息存储技术,它利用STM针尖产生的隧道电流或场发射电流的焦耳热效应,诱导二元电荷转移复合物材料发生局域热化学气化分解反应,使低沸点组分从样品表面逸出,形成纳米尺度的信息孔。

It was found that the adding of non-ionic surfactant increased the activity and stability of enzymes.

原因是非离子表面活性剂分子降低了反胶束离子层的电荷密度,减弱了可导致酶变性的静电相互作用。

For Et4NBF4/AN, the least ionic transfer and diffusion resistance led to an excellent capacitance retention property. For Bu4NBF4, due to the larger solvated ion diameter and higher ion transfer resistance, the capacitive performances were inferior to those of Et4NBF4 in terms of specific capacitance and power density.

实验结果表明:对于高微孔比率的电极材料,由于Et4N+的溶剂化离子半径小于Et4N+的溶剂化离子半径,因此,Et4NBF4体系下的电荷存储密度和有效表面利用率更高,电容性能优于Bu4NBF4。

So the study of the interaction of SCHI with solid surfaces has attracted a lot of attention of many famous laboratories in the world. In previous studies on the interaction of slow highly charged ions with solid surfaces, a lot of attention has been paid to Auger electron emission and autoionization.

在低速高电荷态离子与固体表面相互作用过程中,大量的导带电子会转移到入射离子的外壳层空位上形成多电子激发的&空心原子&,并在飞秒时间和纳米尺度范围内在固体表层沉积几十至几百keV的能量,能流功率密度可达10〓W/cm〓,致使表面形成纳米量级的蚀坑。

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