蚀刻

The barrier layer is removed, and the walls of the trench are etched in a manner that etches the lesser doped regions of the substrate at a higher rate than the higher doped regions of the substrate to widen and lengthen the trench and to form rounded corners at the intersections of the walls of the trench.

除去阻挡层，并以比衬底的更高掺杂区域更高的速率蚀刻衬底的更低掺杂区域的方式蚀刻沟槽壁，将沟槽加宽和加长并在沟槽壁的相交处形成圆角。

First of all, from the material costs, ink than stamping or etching of metal coil; Secondly, low prices from material consumption, stamping or lot metal etching, and conductive ink business card printing and membership card making an antenna or a circuit speeds, a cost-efficient.

首先，从材料成本上，油墨要比冲压或蚀刻金属线圈的价格低；其次，从材料耗用量上说，冲压或蚀刻要消耗大量金属，而导电油墨制卡和会员卡制作天线或电路速度高、成本低、效率高。

Of course the etching characteristics Etchant should be voltagecomposition, physical, chemical and mechanical issues.

当然蚀刻液的蚀刻共性给受到诸多身分的感化，有物理、化学及不活滞方背的。

The thickness of the ink jet printed etch-resist can be varied widely according to the specific requirements of the metal or alloy and etchant used.

在喷墨印刷蚀刻厚度，抵御可以根据不同的广泛的金属或合金和使用蚀刻剂的具体要求。

And includes spraying or dipping where the metal or alloy may be contacted with the chemical etchant in either the horizontal or vertical position.

蚀刻通常是工作在从20日的温度在100 ° C（最好是25至60摄氏度），包括喷洒或浸泡在金属或合金可能与无论是在水平或接触化学蚀刻剂垂直位置。

The post-process employed the etchants to etch the sacrificial layers, and to release the suspended structures, and then used a PDS to seal the etching holes in the pressure sensors.

制程完成后利用蚀刻液，以湿式蚀刻方式，将压力薄膜结构释放悬浮，并且使用化学沈积系统沈积高分子材料parylene，将压力空腔封装，以量测外界与压力腔的压差。

With the dose of 7.04 mC/cm2, ODT/Au will become a more strengthened structure and then form a negative resist in the correlation with cross-linking from alkyl matrix, partial breakdown of S-Au bonding and surface adsorption by air-borne species. Thus, it can obtain a gold pattern via gold-etching process. Besides, as a result of massive breakdown of alkyl matrix and S-Au bonding from ODT/Au under irradiation with doses of 64.06 and 128.13 mC/cm2, ODT SAMs would form a loose-packed structure on the gold substrate. The ODT/Au becomes less resistive for gold-etching and a positive gold pattern would form after gold-etching.

结果发现：以50 eV 低能量电子在照射剂量7.04 mC/cm2微影并曝露於大气后，受到来自於ODT/Au碳链间的交联、部分的S-Au键结破坏以及照射后立即曝露大气所吸附於表面的碳氧化物种的共同影响下，ODT SAMa於Au膜基材上将形成更紧密复杂的结构而作为负型阻剂，经后续湿式蚀刻15分钟后将显影出来Au的负型图案；当提升照射剂量至64.06及128.13 mC/cm2后，由於ODT/Au上碳链及S-Au键结的大量破坏，将使ODT/Au结构不能稳固且紧密地排列於Au膜基材上，显影时Au蚀刻液将容易穿过ODT SAMs抵达S/Au界面而移除Au，而形成正型图案。

Ion beam etching ; Grating ; surface relief ; Quasi directional effect

离子束蚀刻；光栅；表面浮雕结构；准单向蚀刻效应

In this study, alkanethiolate molecules with -CH3 terminated tail group chemically adsorb upon Au substrate and form Au-S bonds, which potentially act as ultra-thin resist films with excellent uniformity in molecular order and high resistivity to chemicals.

且因CH3 官能基表面具化学惰性，针对特定化学蚀刻液拥有抵抗化学腐蚀之能力，以此特性将可应用於制作微奈米等级图案的超薄蚀刻阻剂。

Furthermore, the photo-tool containing the negative image of the desired etch pattern is often distanced from the etch-resist layer and diffraction of the UV light irradiation can lead to development and polymerisation in unwanted areas of the etch-resist directly beneath the photo-tool masked areas.

此外，有大量的照片工具载有所需的蚀刻模式的负面形象往往是远离了蚀刻，抵制层和紫外光照射可导致衍射发展和聚合在etch中不想要的区域，抵制照片下方的直接工具蒙面地区。

According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.

曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。

The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.

稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。