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In a word, the two type of VOA both have valuable applicability and potential market.The author have done numerous processing to work out new processing such as polymer coating and cure and triple-layer-metal film vaporing.

作者经过反复的工艺实验,确定了聚合物波导涂膜和固化、三层金属电极蒸发和腐蚀等新工艺的参数,并得到了聚合物紫外固化、等离子体刻蚀等新工艺的初步数据。

The relation between ablated feature size of thin films and femtosecond laser parameters is discussed in details.

本文主要研究分析了刻蚀产生的线宽与激光功率、加工速度、扫描次数、显微物镜数值孔径之间的关系。

Plasma modification is consisted of Ar-H2 plasma etching and Ar-H2-CH4 plasma decarburizing, experiments have been done on direct current plasma spraying CVD device.

等离子改性处理工艺包括Ar-H_2等离子体刻蚀脱碳、Ar-H_2-CH_4等离子体渗碳处理,实验在直流等离子体射流CVD装置上进行。

Application of photo resists and photo resolution will be discussed.

还有各种刻蚀和清洗技术的基本原理和应用背景。

Titanium surface becomes roughened with the increasing of the etching current.

随刻蚀电流增大,钛表面的粗糙度随之增大。

This in turn causes a more profound modification of the etched surface, e.g., due to roughening or amorphization.

这将导致对于刻蚀表面的严重修正,譬如粗糙度和非晶化。

Acid resist: An acid-proof protective coating applied to metal plates prior to etching designs thereon.

抗触膜:在触刻图案前涂在金属版面上的抗蚀保护剂。

We also solved problems of WSi_x peel and contact etch arcing to increase product yield,make a contribution for successful mass production.

栅极硅化钨脱落现象与接触孔刻蚀异常放电缺陷的改善,提高了产品的良率,为顺利量产做出了贡献。

The invention has the technical scheme that SIMOX or SIMNI technology in SOI process is locally used for perpendicular conducting power devices, while in conventional power JFET manufacture process, the buried local insulating layer is formed by insulating barrier layer growing, gate area doping window etching, ion injection and high temperature annealing.

其技术方案是:将SOI工艺中的SIMOX或SIMNI技术思路以局域化的方式用于纵向导电的功率器件,在制造功率JFET的常规工艺流程中,通过安排绝缘阻挡层生长、栅极区掺杂窗口刻蚀、离子注入和高温退火等四个工艺步骤,来实现隐埋局域绝缘层。

As device technology moving to smaller and smaller design rule, plasma etch technology also advances accordingly, from chamber design to process development.

随着器件技术向越来越小的设计规则发展,等离子刻蚀技术也相应从腔体设计发展到工艺开发。

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在对危险的南部地区访问时,他斥责什叶派民兵领导人对中央集权的挑衅行为。

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