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First of all making cards and membership cards produced letterpress and seihan method in the tubbish steel plate of what needs to be prepared on pattern and some non-pictorial, pre-etching post-penetrating is too large gap insert bars of non-magnetic materials.

首先用制卡和会员卡制作凸版制版法在桶形钢板上制备所需要之图案,并将非图案部分刻蚀穿透,太大的空隙应加上非磁材料的栅栏。

Parabolic relation between the etching rate of AlGaAsSb materials and their Al content was found, unselective etching could be performed for GaSb and AlGaAsSb material with certain Al content.

实验中发现该腐蚀液对AlGaAsSb的腐蚀速率与其Al组份呈抛物线关系,在合适的Al组份下可对AlGaAsSb和GaSb两种材料进行非选择性的刻蚀。

A part of the first glass substrate 4 is notched to form a V-shaped groove.

对第一玻璃衬底(4)的一部分进行刻蚀,形成V字形槽。

The measurement theory and method of source Wheatstone bridge in low resistance trim were described.

论述了有源电桥在刻蚀低电阻时的测量原理及其方法,提出在低阻测量时消除线电阻及其接触电阻的方法,对测量精度进行了分析,对低阻测量及其控制有一定的参考价值。

The present paper deals with the theory of resistance trim by means of source wheatstone bridge in the laser resistance trim system and presents the method of removing line resistance and junction resistance in low resistance measurement.

论述激光调阻机中用有源单臂电桥进行刻蚀电阻的原理,提出在低阻测量时消除线电阻及其接触电阻的一种方法。

In this dissertation, InGaAs/InGaAsP/InP MQW microdisk laser and its characterization were presented. Some conclusions are as following: the characteristics of lasing threshold was discussed by using rate equation. The dependent relations between threshold and cavity volume, spontaneous emission coupling efficiency β were investigated. The whispering gallery mode and spontaneous emission in a microdisk geometry were then studied. Almost all spontaneous emission was coupled into the lowest order TE mode when the normalized thickness of photonics well was between 0.15 and 0.5. The design principle and device process of InGaAs/InGaAsP/InP MQW microdisk laser were presented. The microdisk lasers with the diameter of 8μm, 4. 5μm and 2μm were succesfully fabricated by using etching techniques. The pulse lasing thresholds for the microdisk with the diameter of 8μm and 4. 5μm were 170μW and 15μW, a record results compared with the published in the literature. The cw lasing threshold for a 2-μm-diameter microdisk was only a few μW. We haven't found similar report up to now. To solve the problem of directional output in a microdisk laser, the power coupling efficiency in a double disk geometry was investigated with the theory of waveguide mode couple. A new structure of electrically pumped microdisk laser with output waveguide was designed, making a foundation for the practical use of microdisk laser.

本文主要研究InGaAs/InGaAsP/InP多量子阱半导体碟型激光器的研制和特性表征,并取得如下结果:利用速率方程理论讨论了激光器激射阈值的特性,分析了阈值与腔体积和自发发射耦合系数β之间的关系;讨论了微碟光子阱结构中的自发发射特性和微碟中WGM模式特性;光子阱结构在其归一化厚度在0.15-0.5之间时,几乎全部自发发射进入到最低阶TE模式中;研究了InGaAs/InGaAsP/InP多量子阱微碟激光器的结构设计原理和器件的制备工艺;利用刻蚀方法成功制备出直径分别为8μm、4.5μm、2μm的碟型微腔激光器;直径8μm和4.5μm的微碟脉冲光泵浦激射阈值分别为170μW、15μW,是目前所见文献报导中比较低的;直径2μm的微碟连续光泵浦激射阈值仅几μW,目前尚未见到达到类似结果的研究报导;为解决微碟激光器激射光定向引出的问题,通过波导耦合模理论分析了双层碟之间功率耦合效率;据此设计了新型带耦合输出波导的电泵浦微腔激光器,为进一步研制可实用的电泵浦微腔激光器打下基础。

In this thesis, basic manufacturing processes and techniques for integrated ferroelectrics, such as thin film deposition and film patterning, have been studied. Based on these studies, lead zirconate titanate ferroelectric thin film, which has higher piezoelectric constant than normal piezoelectric materials, is used in silicon-based piezoelectric miniature microphone.

本论文深入系统的研究了硅基铁电薄膜的制备方法及刻蚀加工等集成技术,在此基础上创新性地提出将具有优异力电耦合性能的锆钛酸铅铁电薄膜用于硅基微麦克风研制的思想,完成了器件的优化设计,并成功实现了国际上首个铁电微麦克风器件原型。

The structure to excavate a groove in a cell of the period grating with one alit displays a dent in the transmission spectrum compared with the structure with only a slit in the cell.

金属的介电常数随频率变化关系采用Drude模型。金属光栅每个单元刻蚀有1个亚波长宽度的缝和1个相同宽度的凹槽,凹槽深度可变。

The electrochemical-etching is a very simple and appliable method for preparation of regular nanometer-sized pore arrays.

电化学刻蚀方法是一种非常简单实用的制备规则纳米阵列结构的方法。

Many methods for making nanoscale materials were developed in the past few years, such as colloidal crystallization, monolayer deposition, multiplayer casting, molecular crosslinking, complementary interaction, patterned etch pits, template-mediated and DPN, most of these are complicated and costive.

在过去的几年中,合成纳米复合材料的方法已取得了极大的进展,如胶体结晶法、单层膜沉积法、多层膜浇铸法、分子交联法、互补反应法、图形刻蚀法、模板化学法、DPN法等,但是这些方法大多操作耗时、费力。

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