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Since this is my first model from Trumpeter, this makes me wonder its manufacturing skill.

模型附属有一块蚀刻片,但奇怪地这蚀刻片相当厚。

A process of etching capable of producing several tones by varying the etching of different areas of a copper so that the resulting print resembles the flat tints of an ink or wash drawing .

细点腐蚀制法一种蚀刻法,通过改变铜版不同区域的蚀刻时间可产生多种,以致使印迹类似于墨水画或淡彩画的无明暗之分的

Anisotropically etched insulative sidewall spacers are formed over opposing sidewalls of individual of said transistor gate lines within the peripheral circuitry area prior to forming anisotropically etched insulative sidewall spacers over opposing sidewalls of individual of said transistor gate lines within the memory array area.

在所述存储器阵列区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(40)之前,在所述外围电路区域内的所述晶体管栅极线中的个别者的相对侧壁上形成各向异性蚀刻的绝缘侧壁隔离物(34)。

The thermally cured Etch-resist ink (2) was then removed from the unetched areas of copper by immersing the film in an aqueous solution of 5% by weight caustic at a temperature of 50° C.

的热固化刻蚀抵抗油墨(2)然后从铜的未腐蚀× 100区除名的沉浸在了5%水溶液的电影,由重量烧碱为50 ° C的温度由此产生的FR4电路板蚀刻水冲洗和干燥的空气在25 ° C

The etching solution is composed of Potassium hydroxide, Sodium hydroxide, and additives. The window of demanding is crosshatched in certain conditions on polyimide flexible substrate.

采用化学蚀刻法,蚀刻液由氢氧化钾、氢氧化钠和添加剂组成,于一定的工艺条件下在挠性印制电路板聚酰亚胺基材上开出所需大小、形状的窗口。

The etching solution is composed of Potassium hydroxide , Sodium hydroxide and Additives . The window of demanding size is crosshatched in certain conditions on PI flexible substrate .

采用化学蚀刻法,蚀刻液由氢氧化钾,氢氧化钠和添加剂组成,在一定的工艺条件下在挠性印制电路板聚酰亚胺基材上开出所需大小,形状的窗口。

SI analysis concluded that this bird's beak is the result of TIL and high-k etches undercutting the polysilicon.

SI分析的结论是&鸟嘴&是多晶硅蚀刻时TIL与high-K也被蚀刻侧凹的结果(与原文的字面意义略有出入---译者)。

The etching liquid etches the gold or gold alloy layer existing between the columns evenly.

蚀刻液均匀蚀刻柱之间存在的金或金合金层。

The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly.

蚀刻液均匀蚀刻在半导体器件或液晶装置用基片的表面上形成的金或金合金层。

This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.

此系使得有可能利用可依所需而进行选择的材质来产生任何所需厚度的介电电容器层,特别的是,本发明所具有的优点是,相较于已知技术,通孔蚀刻系可以简单许多的方式加以进行,因为其不需要蚀刻穿透在该金属轨道上方的剩余介电电容器层。

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