蚀刻

The theory of ion etching and the parameter of ion source designing are discussed in detail.

并且详细论述离子刻蚀的原理以及离子源的参数设计。

Such contaminants should always be removed as quickly as possible in order to minimise the risk of etching.

为了使这样刻蚀的危险减到最小，我们应该尽可能的在短时间把它清除掉。

In this case, CF2 is considered as a reactant for SiO2 etching.

在这种情况下，CF2被认为是SiO2刻蚀的反应物。

Both theory and experimental results show that decrease of the band width has little effect on the faradic current at the ultramicroelectrodes, however, the non-faradic current is proportional to the area of those electrodes.

开创了用等离子刻蚀法制备纳米金柱电极的方法，电极的最小尖端直径可达30nm，这是目前报道的最小的电极尖端。详细讨论了制备条件对制备电极的影响。

CSRR is fabricated on the ground plate below the feed line and the stop-band is designed to coincide with that of harmonic.

CSRR被刻蚀在微带天线馈线下的接地板上，阻带对应微带天线的谐波频率。

Main product: Ion implanter, Diffusion/Oxidation furnace, Plasma etching system, PECVD, High temperature sintering furnace ,MOCVD, Vaccum furnace, Silicon crystal growing furnace, Electronics industry kiln and furnace ,Solar cell, Pressure sensor.

主要产品：离子注入机，扩散/氧化炉，等离子刻蚀机，PECVD，高温烧结炉，MOCVD，真空炉单晶炉，电子工业窑炉，压力传感器等。

OBJECTIVE: To observe the growth and propagation of vascular endothelial cells on the surface of intravascular stent material.

目的：观察内皮细胞在经刻蚀并构建仿生的生物活性表面，整合细胞外基质成分的金属钛表面的生长情况。

The SEM micrograph of a pattern-etched sample is also presented.

文中还给出了经图形刻蚀后的样品的表面形貌照片。

As an important step of microelectronic process, etching technology has gained much attention. It will play an important role in microfabrication such as new-made microeletronics mechanism and photoelectrics integration system.

刻蚀工艺不仅作为微电子工艺中的关键技术一直受到人们的关注，而且在新兴的微机电系统，光电集成系统等微细加工中也将得到重要应用。

The anisotropic magnetoresistance and saturation magnetic field of the Permalloy thin films (Ni0.81Fe0.19) sputtered on a nonmagnetic (Ni0.81Fe0.19)0.66Cr0.34 buffer layer were measured. The AMR variations of the films after annealing and the size effect of the AMR stripes after etching were emphatically studied, and a qualitative analysis was proposed through a statistic model. The simulation results agree with the experiments.

研究了以非磁性（Ni0.81Fe0.19）0.66CR0.34薄膜作为过诞层的坡莫合金Ni0.81Fe0.19薄膜的磁电阻效应和饱和磁场，分析退火处理对样品饱和磁场的影响和经刻蚀后的磁电阻效应膜线的尺寸效应，并建立一个统计模型定性分析了其性能变化的机理，计算结果符合实验。

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了