蚀刻

A set of ICP etching system has been designed and manufactured through the analysis of the probe diagnosed results.

这些结论为设计ICP刻蚀系统的反应室、选择合适的刻蚀工艺提供了科学的根据。

The method can be carried out in a direct plasma etching process or in a remote plasma etching process.

该方法可以在直接等离子体刻蚀处理中或远程等离子体刻蚀处理中执行。

Reactive ion etching, as one of dry etching technologies, was originated in the 1970's.

作为等离子体干法刻蚀技术的一种，反应离子刻蚀诞生于20世纪70年代。

The results showed that with the increasing of repetition frequencies, power density, and pulse width of laser beam and with the decreasing of scanning speed, the kerf quality could be improved. Besides, a formula of estimating the kerf surface roughness was also presented, which can explain the experiment results well.

在加工电子行业中表面组装用的模板时，一般采用化学刻蚀法，其缺点是加工精度低、工序多、周期长，特别是受刻蚀因子的限制，模板的最小缝隙宽度不能低于模板厚度的 1 2 ，因而难以满足日益发展的微电子技术对电子线路制作精度的要求。

A ±5.3﹪ uniformity of current density along the major axis of the ion source was achieved.

刻蚀实验表明40 cm长度范围刻蚀深度均匀性为±5.4﹪，同时具有较好的束流稳定性。

Results indicate that etching rates of BST thin films present non-monotonic dependence on mixing ratio of etching gases.

结果表明，刻蚀速率与刻蚀气体的混合比率呈现非单调特性。

RIE is a complicated process. Simulating RIE accurately is important to form a MEMS CAD system.

反应离子刻蚀是个极其复杂的过程，构建MEMS工艺CAD系统，精确模拟反应离子刻蚀的过程是关键之一。

Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained.

然后在多晶硅台阶上淀积保形性很好的SiO2层，再采用高度各向异性的干法刻蚀进行垂直刻蚀SiO2。在使用KOH去除多晶硅后，可以获得SiO2纳米线。

The native oxides on CdSe surface could be reduced to elemental Selenium by a HF etching process. Bombardment using 100eV Ar〓 ions with a dosage of about 1×10〓 ions/cm〓 could remove all the elemental Selenium, which results in a normal stoichiometrical surface CdSe.

实验观测到HF刻蚀可以将CdSe半导体表面的Se氧化物还原为元素Se.100eV的Ar〓离子轰击可以除去HF刻蚀后在表面还原生成的元素Se，从而清洁样品表面，保证了表面CdSe的化学计量比。

In LOCOS dry etching,silicon loss maintained at about 100 - 200 A,pad oxide layer reduced from 300 A to 135 A,and LOCOS oxide thickness change from 5000 A to 4000 A.

在LOCOS干法刻蚀时，对硅的刻蚀深度保持在100-200左右，衬垫氧化层从300减少到135，LOCOS热氧化厚度从5000？

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了