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As a result, there were many cicatrice sculptured in faces of PET film, which were degraded with TA as the common metabolism, after one month.

通过电子显微镜观察降解后膜的表面,结果表明:通过长期驯化的F4和p.ch菌株,都能使PET膜表面产生明显刻蚀孔洞;且在富氧的条件下,以TA为共代谢基质降解PET膜,在一个月内能将PET膜表面刻蚀出较大空洞。

Then this technique hasn't been widely used in the study of conduction polymers.

我们设计了一种有效的刻蚀金的方法—电化学汞齐刻蚀法。

The making process includes: setting insulating solid film on one horizontal rotating carrier with particle detecting unit and etching with single particle beam in the incident angle of 9.6-90 deg to penetrate the film, shifting the film relatively to the single particle beam and etching for the next time, and so on until the film is rotated by one turn to obtain truncated cone shaped, double turned truncated cone shaped or cylindrical single nanometer hole.

本发明将固体绝缘薄膜置于带有粒子检测装置的一个可水平旋转的载体上,用单粒子束刻蚀该薄膜,单粒子束入射角大于等于9.6°、小于等于90°,并且单粒子束在该薄膜底部、顶部、或二者之间与薄膜旋转轴交叉,待单粒子束完全穿透该薄膜后,固体绝缘薄膜底部的粒子监测器反馈使该薄膜被穿透处与单粒子束相对移动1荆再刻蚀,如此反复,直至固体绝缘薄膜旋转一周,获得圆台形、双倒圆台形或圆筒形的单纳米孔。

The results of SEM, XRD and XPS analysis show that electrolytically etched surface consists of Al and Al〓O〓. Al〓O〓 concentrates in pattern area and exists in forms of α-Al〓O〓 and γ-Al〓O〓.

Al-Mg-Si合金经电解刻蚀图纹化后,SEM、XRD和XPS分析表明,刻蚀表面由Al和Al〓O〓组成,Al〓O〓主要集中在图纹处,以α-Al〓O〓和γ-Al〓O〓的形式存在。

The morphology, component and structure of electrolytically etched surface are characterized and the mechanism of electrolytic etching and graining is also discussed based on the theoretical analysis. The components that can form barrier layer or dissolve the resisting layer on the surface of Al-Mg-Si alloy specimens are investigated through voltamperometric and chronoamperometric analysis in several solutions.

通过对Al-Mg-Si合金在各种溶液中的电流密度—电位曲线及电位—时间曲线的测量与分析,筛选出能够在Al-Mg-Si合金表面形成阻挡层的成分和对阻挡层有刻蚀作用的成分,并进行复配实验对比,优选出偏硼酸钠-硼酸、酒石酸-碳酸钠、磷酸钠-正丁酸和柠檬酸钠-柠檬酸等4种图纹电解刻蚀液体系。

In the last part of this paper, equipment model of etch is established by neural network toolbox in Matlab.

论文的第三部分建立了刻蚀机的设备模型,并且使用matlab中的神经网络工具箱模拟了硅片表面的刻蚀工艺结果。

More often, all of the materials exposed to the etch ant have a finite etch rate.

通常,所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。

More often, all of the materials exposed to the etchant have a finite etch rate

通常,所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。

According to the illustration of the operating principle, construction features of the etcher, commissioning results and technical performance were presented.

针对大尺寸基底往复扫描条形离子束来实现大面积刻蚀的特点,实验测试了基于射频感应耦合等离子体离子源大型离子束刻蚀机的性能。

We investigate the effects of the configurations of the chamber and the coil of an inductively coupled plasma etcher and the process parameters on the homogeneity of plasma distribution.Using the modules of plasma,electromagnetic field,etc.in the commercial software CFD-ACE+,a two-dimensional discharge model of an ICP etcher was built.

为研究感应耦合等离子体刻蚀机腔室与线圈结构以及工艺参数对等离子体分布均匀性的影响,基于商业软件CFD-ACE+中等离子体与电磁场等模块建立了ICP刻蚀机二维放电模型。

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