蚀刻

Moreover, the micro-pattern etching of electrodes and PZT thin films have been investigated, and the fast and successful etchings have been actualized with new etchants and original methods. The technics and mechanism of anisotropic etching of monocrystalline silicon have been studied deeply, for example the influences of the concentration and temperature of tetramethyl ammonium hydroxide on the rate and effect of the anisotropic etching.

此外，结合PZT铁电薄膜热释电单元红外探测器的设计和制备，对电极和PZT铁电薄膜的微图形刻蚀工艺进行了研究，采用新的刻蚀液配方和具有独创性的方法，实现了对PZT铁电薄膜和上下电极快速、成功的刻蚀。

In the fabrication of diffractive optics elements and semiconductor, it is demonstrated that an initial edger can expand into smooth curves and the surface motion in different local place is not identical.

在制作衍射光学元件以及半导体加工的刻蚀工艺中，刻蚀产生的表面面形随刻蚀时间的延长而产生动态的形变。

The etching was stopped due to electroosmosis effect when electroconductivity of the etching membrane occurred, and over etching was automatically avoided.

当刻蚀达到电通透时，在电渗流的作用下刻蚀自动停止，从而避免了过刻蚀。

The system employs conventional configuration of parallel plate reactive ion etcher. This equipment, with good performance/price ratio, is anticipated to obtain more desirable etching resolution and profile, because the system design is optimized reasonably and high-quality assemblies have been chosen.

该系统采用常规的平板形反应离子刻蚀结构，由于设计方案经过合理优化，且系统选用高质量的精密零部件，系统预期可以实现较高的刻蚀分辨率和较好的刻蚀形貌，具有良好的性价比。

There was a linear relationship between the etching depth and the etching time.

在刻蚀过程中，刻蚀深度和刻蚀时间呈线性关系。

The process of electrolytic etching and graining on the surface of Al-Mg-Si alloy has been studied systematically by means of electrochemical measurement.

本文通过电化学测试，系统研究了Al-Mg-Si合金表面的电解刻蚀图纹化过程，并对电解刻蚀表面的形貌、组成及结构进行了分析，结合电解刻蚀过程的理论分析，探讨了Al-Mg-Si合金电解刻蚀图纹化的机制。

Resistance pure water system, 3-waste treatment system, and shock-proof working-table, and about 80 sets of micro-electrical-mechanical technical equipment are installed, including AMS200 ICP plasma etching system, ICP-2B etching machine, AWB04 bonding machine, MA6/BA6 Karlsus double-face photolithography machine/bonding machine, POLI-400 chemical-mechanical-polishing tool, WL2040 aluminum-wire press welder, OPTI CAOT 22i decktop precision spin coasting system, ZSH406 automatic dicing saw system, DQ-500 plasma photoresist-removing machine, HXS150S automatic centrifugal spinner, AXTRON MOCVD metal organic chemical vapor deposit system, 4470 micro-control 4-tube diffusing furnace, type 4371 LPCVD low pressure chemical vapor deposit system, OMICRON MBE molecular beam epitaxy system, JS-3X100B magnet-control spattering equipment, PECVD-2E plasma deposit apparatus, ZZSX500C electron-beam vapor equipment, JC500-3/D magnet-control spattering-coating machine, H63-14/ZM quartz-tube cleaning machine. Measurement instruments include OLS1100 Confocal Laser Scanning Microscope, DEKTAKIII Surface Profiler, D41-11A/ZN 4-probe resistance test instrument, Nikon L150 metallurgical microscope, and so on.

中心现有80多台各种微机电工艺设备，如AMS 200深硅等离子体刻蚀系统、ICP-2B刻蚀机、AWB04键合机、MA6/BA6 Karlsuss双面光刻机和键合机、POLI-400化学机械抛光机、WL2040铝丝压焊机、OPTI CAOT 22i喷涂胶机系统、ZSH406全自动划片机、DQ-500等离子去胶机、全自动清洗甩干机、AXTRON MOCVD金属有机物化学气相沉积系统、4470微控四管扩散炉、4371LPCVD低压化学沉积系统、OMICRON分子束外延系统、JS-3X100B磁控溅射台、PECVD-2E等离子淀积台、ZZSX500C电子束蒸发台、JC500-3/D磁控溅射镀膜机、石英管清洗机，以及多种常用测试仪器，如OLS1100激光共聚焦显微镜、DEKTAK-III台阶测量仪、D41-11A/ZN四探针电阻测试仪、Nikon L150金相显微镜等。

Firstly, the theory and knowledge of sparking and burning are briefly introduced. The holistic project of this experiment is designed aiming to the experiment motive. And then the micro-process technique on silicon is chosen. According to the technique, the structure and size of the micro chamber, the spark device, the gas-fired channels are designed. The mask of lithography is produced based on the design. At last, the whole burning room is produced by the techniques of photolithography, deposition, dry etching, wet etching, lift off, etc.

本文首先介绍了点火燃烧的有关原理和基本知识，然后根据提出的实验研究目标，确定了微小空间内点火特性实验总体方案，之后结合拟采用的硅微加工工艺设计确定了微燃烧室、放电点火装置、燃气通道等各部件的结构尺寸，并最终得到光刻用掩膜版图形，最后分别采用光刻、淀积、干法刻蚀、湿法刻蚀、剥离等硅微加工技术完成了实验用微燃烧室的制作。

Dry etching technologies, especially RIE is described resumptively in this paper, more over, the mechanism and process technology of RIE is also expatiated.

本文对干法刻蚀技术作了概括的阐述，着重介绍反应离子刻蚀，并对其刻蚀机理及其刻蚀工艺作了详细论述。

The growth of truncated icosahedra could be induced and maintained through interplay of following processes:the～50 nm multiple twinned seeds were generated; shape and size focused by Ostwald ripening,then oxidativly etched and preferentially grew on the {100} face.Oxidative etching plays an important role in the formation of gold nanocrystals on hydrothermal condition.

对二十面体金纳米粒子及截角二十面体的生长机理进行了探讨，考察了不同刻蚀程度对金纳米粒子的形态影响，研究结果表明，增强体系刻蚀程度有利于单晶的生长，减弱刻蚀程度有利于孪晶的生长。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。