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Furthermore, in the preparation process of the films, the some factors of influencing the refractive index of film were analyzed, such as the butanol remained in film, temperature and the dry time.

此外,分析了薄膜制备过程中,残留丁醇及制膜温度和干燥时间对薄膜折射率的影响。

Generally speaking, according to the GB 10006 (plastic film and slice method for determination of the coefficient of friction) and ASTM D1894 to film on the surface of dynamic and static coefficient of friction for forward and inverse.

凡是给根据GB 10006(塑料薄膜和薄片摩擦系数测定办法)和ASTM D1894来测定薄膜正反暗不天的不静静摩擦系数。

Optimization of polyester condensation process and reactor design;2. The Structure Characters of the Sulfonated Condensation Polymer Series High Performance;3. The pH value of the solution was adjusted,and the co- condensation reaction was taken place between the hydroxy groups forming transparent organic-inorganic hybrid films on polycarbonate.

以甲基丙烯酰氧基丙基三甲氧基硅烷(KH-570)水解聚合产物作为主要成膜物质,引入正硅酸乙酯水解产物硅溶胶作为无机增强物,调节两种混合溶液pH值,利用两者羟基之间的共缩聚反应在聚碳酸酯板表面制备有机/无机复合透明耐磨薄膜;采用TG/DTA、FT-IR、SEM及UV-V IS对成膜过程、薄膜性能与结构进行表征。

Then, the effect of the thickness of YBCO film on critical current density was studied.

本研究还分析了薄膜厚度对YBCO薄膜临界电流密度的影响。

Glancing angle X-ray diffraction revealed the amorphous nature of the films.

掠射角X射线衍射分析显示,经快重离子辐照后的薄膜仍然是非晶结构薄膜。

Based on these, the method for analysing the thermal-mechanical problems during the film depositon is proposed, and some mechanical problems are studied which include the asympototic analysis of the stress and deformation in a nonhomogeneous material layer on a substrate and the weight function method for interface crack problems as well as the mechanics of an interface toughening induced by the dilatant transformation.

本文对这些方面的研究及其成果进行了较全面的评述,并在考察了一个薄膜-基底系统(等离子喷涂ZrO〓陶瓷涂层的工艺研究)的生产研究的全过程的基础上,对薄膜沉积过程中的热-力学分析方法和包括表面异质层中应力变形的渐近分析方法、界面裂纹问题中的权函数方法、相变引起的界面增韧的力学分析方法等在内的一些薄膜-界面-基底系统的力学问题进行了研究。

The invention is concerned with the high state ratio abio-film electricity double steady device and the making method.

本发明属于微电子器件和功能薄膜材料技术领域,具体涉及一种高状态比的无机薄膜电双稳器件及其制作方法。

It is shown that the low potential barrier at the interface is the major cause of the enhancing effects instead of the negative surface electron affinity of the coating.

发明一项超薄类金刚石薄膜在硅微尖锥顶端的精确定位沉积技术,研制出带控制栅极类金刚石薄膜尖端阵列真空微电子源。

The weak signal characteristics of the capacitors of PYZT ferroelectric thin films are investigated. It is found that when the PYZT thin film deposited on Pt/RuO2 is rapidly thermal-annealed at 800℃, an almost ideal microstructure of extended PYZT can be acquired, of which, the εr decreases with the increasing of the rapid temperature (εr is about 150 when annealed at 800 ℃).6 refs.

研究发现,沉积在Pt/RuO2底电极上的PYZT薄膜经800℃快速热处理具有较接近理想外延PYZT薄膜结构,而且εr随着快速热处理温度升高而减小,在800℃快速热处理条件下其εr约为150。

In this thesis, the low-temperature (25℃-250℃) sputtered aluminum nitride film was deposited as the gate insulator in organic thin film transistors.

本论文中,低温(25℃-250℃)溅镀氮化铝薄膜被沉积当作有机薄膜电晶体上的闸极绝缘层。

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