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TiO_2 thin films prepared directly by Sol-gel method were amorphism; Anatase-type TiO_2 took place at calcination temperature 450℃. It was found that different substrates showed some difference of photocatalytic activities.

溶胶-凝胶法直接制备的TiO_2薄膜是无定形的,通过对不同基底的薄膜样品在450℃条件下退火处理后得到了锐钛矿型TiO_2薄膜。

With the analysis of the bond structure of the film as deposited and annealed, we can infer that the increased content of cage structure comprised of Si-O-Si bond with bigger bond angle may be the reason of decreased dielectric constant.

薄膜经过400℃热处理后,其介电常数由3.85降低到2.85,对其FTIR谱的分析指出,薄膜中鼠笼式结构比例的增加可能是薄膜介电常数降低的主要原因。

The micro movement of deposited cluster and the microstructure evolution of thin film have been studied in dimension of atom-cluster in this paper. There are some important applications to do deeply research on the migration, coacervation and nucleation of atom cluster, to optimize the deposition process, to enhance the characteristics of thin film.

在原子尺度上揭示膜层形成初期粒子的微观变化过程及膜层微观结构的演化规律,对深入了解表面粒子的迁移、吸附和成核,对改进和优化薄膜生长工艺、提高薄膜质量、改善薄膜性质具有重要意义。

The absorption and reflection properties of the sublimated BTN-SubPc thin film are pretty good at 500 nm~650 nm, which matches well with the wavelength of semiconductor laser used in digital versatile disk systems.

在室温下测试了该亚酞菁染料在溶液和薄膜态的吸收光谱、薄膜态的反射和透过光谱,发现该薄膜在500nm~650nm波长范围内具有优良的吸收和反射特性。

The thermionic emission and tunneling current dominate the conduction process at higher Xc. However, if the film has low Xc, which means lager barrier width, the tunneling current can be neglected.

首次运用二维结构渗流模型计算了微晶硅薄膜结构对电导率的影响,从理论上解释了造成微晶硅薄膜输运各向异性的主要因素是薄膜中晶粒的柱状生长。

According to the simulated results, it was found that the incident light was not fully absorbed in the solar cell due to a thinner base layer. The un-absorbed incident light could be further reflected by a AuGe/Au mirror layer and absorbed again by the base layer. Thus the disadvantage of the GaAs thin-film cell with a thinner base layer could be solved by the additional reflection from the AuGe/Au mirror with a high reflectivity within 800~1000 nm wavelength. Moreover, the external quantum efficiency in the long wavelength region and short current density were also increased.

从模拟结果中得知,薄膜型结构之太阳电池可以经由AuGe/Au之金属反射层,再次将未被基极层完全吸收之入射光反射回太阳电池,使得薄膜型结构在长波段的外部量子效率获得提升,这结果显示薄膜型结构太阳电池可利用AuGe/Au之金属反射层在长波段的高反射率,改善使用较薄基极层时,无法将入射光完全吸收的缺点。

Because silver particles are stabilized by the other thermal decomposition products of silver behenate, in the range of 193°C~320°C, the formed film is not pure silver.

通过控制山嵛酸银的热分解温度可以构筑不同形态的银薄膜,在190°C~320°C,金属银被有机产物钝化,形成了掺杂有机物的金属银薄膜;当温度高于500°C时,有机产物进一步分解可以形成纯金属银薄膜。

In order to enhance the miscibility between the inorganic and the organic phases,the silanol coupling agent is made from the slane VTMS and the colloid silica. Then the silanol coupling agent and nano-particles of ZnSb2O6 as the conductive filler are successfully bonded and the nano-particles of ZnSb2O6 will become more organic-like. The colloid silane-SiO2-ZnSb2O6 precursor solution is subsequently mixed with a homogeneous lsopropylalcohol solution of SR-399 acrylic monomers (Dipentaerythritol pentaacrylate) and the active free radical agent709. Under nitrogen purging, this reaction solution prepolymerize at 60℃. Then, the solution is spin-coated with the spin coator at room temperature. At last, the coated thin film is cured and crosslinked by the UV curing reactor to form the highly transparent thin film with good optoelectronic properties from hybrid organic-inorganic nano-composite.

首先以矽氧烷VTMS和colloid silica制备矽氧偶合剂,再以此偶合剂对分散於异丙醇溶液之奈米级的colloid ZnSb2O6做有机化改质,以增进其与有机高分子基材的键结相容性,我们将此colloid silane-SiO2 - ZnSb2O6前驱物与SR-399有机基材单体(Dipentaerythritol pentaacrylate)的异丙醇溶液与活性自由基光起始剂709均匀掺混后,在充满氮气反应系统下,加热至60℃进行预聚合反应,接著在室温下以旋转涂布机旋转涂布成厚度均匀薄膜,最后将此薄膜直接高温硬化或以UV硬化机网状键结硬化成透明与具部份导电性等光电特性之无机/有机奈米混成薄膜。

Although the reflectivity is small near the condition of resonance, the large negative GH shifts can be more easily detected in comparison with the shift from a plane-parallel film in vacuum.

尽管接近于共振时,反射率比较小,但是和平面平行薄膜相比,楔形薄膜所产生的大的负GH位移更容易探测。标签楔形薄膜 Goos-H?nchen位移反射

By means of magnetically controlled reaction and sputtering process, metal tin is oxidized, and tin oxide film in nano level is formed on silicon chip and further oxidized and annealed to form the nano crystal particle tin oxide film. The nano crystal particle tin oxide film has the features of great specific surface area, homogeneous thickness, high surface smoothness, high sensitivity, high stability and others.

本发明采用磁控反应溅射方法使金属锡氧化,在硅片上生成锡的纳米量级氧化物薄膜,再进一步氧化、退火,即可制造出纳米晶粒氧化锡薄膜,该氧化锡纳米敏感薄膜具有氧化锡颗粒度小,比表面积大,厚度均匀等特点,且表面平整度高,在100倍显微镜下观察没有裂痕,有利于提高气敏传感器的灵敏度和稳定性,通过溅射时间严格地控制膜厚,可重复性高,适合于批量生产。

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