薄膜的

The control principle of electrostatic shaping was introduced according to the balance between electrostatic force and resulting force formed by membrane deformation and the complex shaping process of SMEC. Then, taking the trisection circularity electrode for an example, the distribution characteristic of electric potential in the electrostatic field was analyzed, namely, the expression of potential function in the electrostatic field was deduced by Laplacian equation. And then, by combining the difference equation with electric potential expression, the numerical solutions of electrostatic force in single electrode mode and trisection circularity electrode mode were disposed.

根据静电力与薄膜变形载荷作用力之间的平衡关系和静电拉伸薄膜反射镜成形的复杂过程，介绍了薄膜反射镜静电成形的控制原理；以三等分环状电极为例，分析了静电场中空间电势分布特性，即从拉普拉斯方程推导出静态场势函数的表达式；然后，利用差分与电势方程结合的方法，对单电极电场力和三等分环状电极电场力进行了数值求解；最后，将计算面形与理想抛物面进行了比较，结果显示，单电极情况下得到的薄膜反射镜面形不是理想抛物面，若采用多电极控制可获得更高的控制精度。

A simplified numeric algorithm expression for solving transcendental equation of optical constants was obtained by analyzing the test principle of ellipsometer. A Microsoft Windows based calculating program for optical constants of thin films with "Solve Block" module of MathCAD by ellipsometer was developed. It can be used to calculate refractive index and thickness of thin films with little absorption or even no absorption as its feature.

通过对椭圆偏振仪测试原理的分析，得到求解薄膜光学常数超越方程的数值算法简化公式，并利用MathCAD的"Solve Block"模块开发了基于Windows系统的椭圆偏振测量薄膜光学常数的计算程序，该程序可用于单层有吸收薄膜或无吸收薄膜折射率和厚度的计算。

A simplified numeric algorithm expression for solving transcendental equation of optical constants was obtained by analyzing the test principle of ellipsometer. A Microsoft Windows based calculating program for optical constants of thin films with "Solve Block" module of MathCAD by ellipsometer was developed.

通过对椭圆偏振仪测试原理的分析，得到求解薄膜光学常数超越方程的数值算法简化公式，并利用MathCAD的"Solve Block"模块开发了基于Windows系统的椭圆偏振测量薄膜光学常数的计算程序，该程序可用于单层有吸收薄膜或无吸收薄膜折射率和厚度的计算。

Concentration of silver behenate solution affects the morphology and packing density of silver. The thin silver film of spherical silver particles, with an average diameter of 160 nm has been fabricated by a millimolar solution of silver behenate. The thick silver film is consisting of the regular silver particles with triangular or truncated triangular shape, which is formed at high concentration.

山嵛酸银分散液的浓度影响银薄膜中银粒子的堆积密度和形态，在很低浓度下可以得到银粒子均匀分散的金属银薄膜，球形银粒子平均粒径为160nm；而高浓度的山嵛酸银分散液得到较厚的金属银薄膜，薄膜中含有规则的三角形和截三角形银颗粒。

Said film made electrode has good charge discharge circulation reversibility, wherein: copper diselenide film made electrode specific capacity keeping on 220 mah/g; copper selenide film made electrode specific capacity keeping on 160 mah/g; cuprous selenide film made electrode specific capacity keeping on 210 mah/g more or less.

由这三种薄膜制成的电极，都具有良好的充放电循环可逆性，其中：由二硒化铜薄膜制成的电极的比容量保持在220mAh/g左右；由硒化铜薄膜制成的电极的比容量保持在160mAh/g左右；由硒化亚铜薄膜制成的电极的比容量保持在210mAh/g左右。

The results show that the films are characterized by the amorphous microstructure and mainly composed of Si C bondings, C C bondings as well as a small mount of oxide impurity consorted with Si; the content of the C C bondings decreased after annealing in vacuum, meanwhile the Si C bondings content increased, annealing in vacuum is beneficial to the formation of SiC; after annealing at 800 in air, a thin dense layer of SiO2 formed on the surface, which prevented the oxygen from contacting with the film and effectively protected the inner SiC from oxidizing.

结果表明，薄膜主要以非晶为主，由Si--C键， C--C键和少量Si的氧化物杂质组成；在真空条件下经高温退火后，薄膜C--C键的含量减少，而Si--C键的含量增加，真空退火有利于SiC的形成；在800℃空气中退火后，薄膜表面生成一层致密的SiO2薄层，阻止了氧气与薄膜内部深层的接触，有效保护了内部的SiC。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane.

对于薄膜特别是柱状晶薄膜，当晶粒在膜平面内的尺寸大于膜厚时，柱状晶粒的上底面和下底面的面积将大于侧面的面积，因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外，还需要考虑表面能和界面能，因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

For thin polycrystalline films, especially those with columnar structure, once the diameter of grains on the film surface is larger than the film thickness, the total area of above and under basal planes (film-substrate interface) will be larger than that of side plane. Therefore besides the minimization of boundary energy in traditional bulk material, surface energy, interface energy would be considered due to the anisotropy of surface energy, interface energy being able to drive the grain growth and texture evolution in thin films.

对于薄膜特别是柱状晶薄膜，当晶粒在膜平面内的尺寸大于膜厚时，柱状晶粒的上底面和下底面的面积将大于侧面的面积，因此薄膜中的晶粒生长除像整体材料中的晶粒生长一样考虑晶界能外，还需要考虑表面能和界面能，因为各向异性的表面能和界面能将导致薄膜中的异常晶粒生长和织构变化。

In the first part of this thesis, Stress relaxation method set up in the software of DMA was used to perform the aromatic and aliphalic (D2192-BAPP) PI film stretching process. To study the optical anisotropies property to the light leakage from the crossed polarizers, we put the stretched samples into one set of crossed polarizers and as expected, the stretched PI films could reduce the light leakage at view angle of ±45 deg, and exhibited a visually observed compensating property of an A-plate. No color shift wasobserved, and the birefringence was very uniform. These results prove a uniform birefringence can be obtained by a stretched process for PI films.

首先，我们以动态机械分析仪的应力缓和模式对芳香族FDA-BAPP PI及脂肪族D2192-BAPP PI薄膜进行拉伸实验，并将拉伸后的PI薄膜置於一组相互交差的偏光片中观察其光学异向性，发现拉伸后的PI薄膜试片可以降低在±45o视角的漏光的效果，展现出如同A-Plate的光学补偿特性，所显现的光学补偿效果相当的均匀而且没有色偏的情形发生，证实以拉伸方法可以造成PI薄膜很均匀的双折射效应。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。