薄膜的

A polarizing plate is provided and includes a polarizing film and two transparent protective film, at least one of the two transparent protective films being an optical compensation sheet, the optical compensation sheet being a cellulose acylate film having a thickness of from 40 m to 180 m.

本发明提供了一种偏振片，其包括偏振薄膜和两个透明保护薄膜，该两个透明保护薄膜中的至少一个是光学补偿片，该光学补偿片是厚度为40～180μm的纤维素酰化物薄膜。

Electrochemical characteristic of ITO/TiO2 electrode under UV irradiation was investigated using the method of cyclic voltammetry.

采用射频磁控溅射技术制备纳米TiO_2薄膜、SiO_2-TiO_2复合薄膜以及金属掺杂的M-TiO_2薄膜，并研究其光催化性和光致亲水性。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The precursive Fe3O4 films were sulfurized using constant current electrodepositing and oxidation treating, and Fe3O4 films was transformed into FeS2 thin films after heat sulfur annealing of 400℃ at different sulfurizing pressures.

采用恒流电沉积及氧化处理制备Fe3O4先驱体薄膜，再通过400℃下的热硫化退火，使Fe3O4先驱体薄膜在不同硫压下转变成为多晶FeS2薄膜。

In order to solve this problem that the temperature coefficient of the Chromium-film resistance fabricated at first was low, the main factors effecting on temperature coefficient are studied in this paper on the basis of film theory and experiments.

针对初期制备的铬薄膜电阻温度系数较低的问题，根据薄膜理论分析，研究了影响铬薄膜电阻温度系数的主要因素，根据实验结果不断改进铬薄膜电阻制备工艺，最终制作出了基本满足检测要求的热敏电阻薄膜。

The AlTiN multilayer and AlCN monolayer hard coatings were studied by high-resolution transmission electron microscopy on microstructure.

采用高分辨透射电镜技术对两种硬质薄膜(AlTiN多层薄膜和AlCN非晶薄膜)样品的显微结构进行了研究。

The first layer is phosphosilicate glass and the second layer is silicon nitride. Now the passivation layer can isolate the device circuits from external contamination damage.

在护层的薄膜中，经常使用双层薄膜(Multi-Layer)的结构，第一层薄膜沈积磷矽玻璃，第二层薄膜则沈积氮化矽，即可将元件线路结构与外界污染物隔离。

Based on the pyrocondensation model and principles of elasticity, the layer structure design of thin films was proposed in view of the control of residual thermal stress and the corresponding evaluation function was applied to the layer structure design of films.

基于热收缩效应模型和弹性力学原理，从薄膜膜系着手提出了控制薄膜残余热应力的膜系设计原则，将该原则的评价函数用于薄膜膜系设计中，采用优化方法可以设计出残余热应力可接受的薄膜。

In this paper we focus our attention to CoCr thin films. Investigation is carried out on both magnetic properties of the CoCr、FeNi、Ti thin films and the multilayers consisted of CoCr、FeNi and Ti thin films.

本文选择垂直磁化CoCr合金薄膜作为重点研究对象，用单极磁头、双层介质的组合，对CoCr薄膜、FeNi薄膜、Ti薄膜及由CoCr、FeNi、Ti膜组成的多层膜结构和磁性能进了仔细研究。

At present, the company has completed the film with nano-level and engineering level of the development of nylon and successfully applied to the functional film and the field of urban water supply, developed a multi-layer barrier packaging films, stretch film, high-strength heat shrinkable barrier film series, as well as nano-meter nylon, plastic beer bottles series, films and nylon meter has formed the scale of industrialization.

目前，公司已完成膜用级和工程级纳米尼龙的开发，成功应用到功能性包装薄膜及城市供水领域，开发了多层阻隔包装薄膜、拉伸膜、高强度高阻隔热收缩薄膜系列以及纳米尼龙水表、塑料啤酒瓶系列，薄膜及尼龙水表已形成产业化规模。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。