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The results indicate that the thermal conductivity of Si3N4 thin film increases with the temperature;under high frequency stage the frequency has apparent effect on the thermal con...

测试结果表明:Si3N4薄膜的热导率随温度的升高而增大;高频段下,热导率受频率影响大,误差大;在低频段下薄膜热导率与频率变化基本无关;基于电子与声子的局部热平衡运输方程假设,S i3N4薄膜的热导率具有极度非平衡性;通过比较电阻、热导率与温度的关系可以看出加热器的尺寸大小会影响薄膜的热导率,最佳加热器的宽度选用20μm左右。

The properties of thin films have been investigated with modern analysis technique, such as AFM, SEM, XRD (X-ray diffraction) and Rocking curve. And the properties of YBCO thin film and its substrate and deposition temperature have been analysed, comparing with LAO substrates crystallization quality, YBCO thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of LAO substrate as revealed by XRD.

本文结合AFM、SEM研究YBCO薄膜的表面形貌,XRD、FWHM分析薄膜的结晶情况,并结合成膜温度和基片的质量进行一系列结构与性能的对比研究,发现LaAlO3基片的质量对YBCO薄膜的结构完整性有很大影响,不仅影响了薄膜的c轴取向性,而且影响了YBCO的超导性能。

In the process of electro-membrane filtration, the applied operation condition and membrane do not have significant electroosmosis effect through related experiment. Under the operation of 98KPa pressure, only 6% flux was increased, which showed the increase of flux in the applied electric field process mainly from electrophoresis effect. The effect of dye filtration by membrane is mostly influenced by the basic nature of dye, including size of molecular weight, electrophoresis motility and the adsorbability of dye to membrane.

在外加电场薄膜程序中,所用的操作条件以及所使用的薄膜,经电渗透实验显示电渗透的效应不明显,而在98KPa压力操作下,也仅增加6%的通量贡献,显示外加电场程序通量之提升主要来自电泳作用;薄膜过滤染料的效果主要受到染料基本性质的影响,包括分子量大小、电泳动能力与染料对薄膜的吸附能力。

According to the device operating principle and energy equipartition theory of thermodynamics,the mechanical-thermal noise is 9.96×10-9 W/Hz1/2,and the background noise is nearly 3.22×10-11 W/Hz1/2,so that the normalized detectivity is deduced to be 9.03×106 cm·Hz1/2/W.

Hz1/2/W。实验表明,器件的噪声中热机械噪声为主要噪声源,大小主要由浓硼硅薄膜的机械性能和器件结构决定,可以通过增大薄膜厚度,减小薄膜面积,从而增加薄膜的特征频率的方法来减小器件受外界振动的影响,但以降低器件的灵敏度为代价。

Block-copolyimide film from pPDA/ODA-PMDA was studied by TEM, SEM, PLM, ultra-deep three-dimensional microscope, TMA, and WAXD, which showed that the extensile strength and modulus of b-PI film were higher than that of irregular copolyimide film. It was also revealed that there was a large amount of crystallite formed in b-PI film, which was mainly attributed to its chain structure: rigid pPDA-PMDA chains were easy to form crystal nucleus because of phase separation, based on which semi-rigid PMDA-ODA molecular chains began to crystallize.

以pPDA/ODA-PMDA型嵌段共聚酰亚胺薄膜为对象,借助TEM、SEM、PLM、超景深三维显微镜、TMA、WAXD等手段,研究结果表明:b-PI薄膜的拉伸强度、弹性模量均高于无规共聚酰亚胺薄膜;b-PI薄膜中形成了大量的微晶,这是由于刚棒状的pPDA-PMDA分子链段因相分离容易形成晶核,然后半刚性的PMDA-ODA分子链段以PMDA-pPDA为晶核进行晶体生长造成的,而且ODA-PMDA分子链的结晶和酰亚胺化反应基本上是同步进行的。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的,至今人们对PECVD 氮化硅薄膜的研究还很不成熟,尚处于研究探索的阶段,从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究;与此同时,制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

By Galerkin meshless method, the equations of motion of static rectangular membrane is established. The first ten natural frequencies of the different aspect ratios and the different pull ratios of rectangular membrane with four clamped edges, three clamped edges and one free edge, two opposite free edges and other two clamped edges were calculated. It is feasible and valid to solve the transverse vibration problem of membrane by Galerkin meshless method.

采用伽辽金无网格法,建立了矩形薄膜横向自由振动的运动方程,并对四边固支、三边固支一边自由、一对边固支另一对边自由三种边界条件下,薄膜的不同长宽比及不同单位长度拉力比作用下的矩形薄膜的前十阶固有频率进行了数值计算,结果说明伽辽金无网格法用于求解薄膜横向振动问题是切实可行的。

The anatase crystals of the TiO2 films connected together to form netlike structure after calcined, and th

在自制的光催化反应装置中以10mg/L甲基橙为降解对象,考察了TiO2薄膜的光催化性能,在4h内直接干燥的TiO2薄膜脱色率达到95%,经热处理后薄膜的光催化性能有一定提高,这说明采用AS溶胶前驱体制备的TiO2薄膜光催化性能良好。

The residual stress can also change the transition energy of excitons.

薄膜应力是影响ZnO薄膜紫外荧光发射性能的重要因素,较小的残余应力对ZnO薄膜的紫外荧光发射是有利的,残余应力的存在可以改变ZnO薄膜紫外荧光发射能量。

The detail microstructure, composition and optical property of the films have been explored through RBS, XPS, Raman, XRD and IR spectroscopes. The negative bias dependent film growth on the influence of grain size, preferred orientation, and density within grain boundary and volume densification was a significant phenomenon for hetero-deposition.

用RBS,XPS,Raman和IR谱分析薄膜的微结构、成分和光学性质表明,a-CN〓薄膜包含石墨和类金刚石的相成分,加适当的负偏压可增加沉积原子的扩散度,改变薄膜固体结构,影响薄膜的多晶晶粒尺寸、晶面取向、晶界密度和体密度。

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