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The resistivity, squared resistance and temperature coefficient of resistance in hydrogenated silicon film decrease with the increasing of boron doping concentration.

搭建了半导体噪声测试系统,对非晶、微晶和多形三种氢化硅薄膜的1/f噪声测试分析说明薄膜的晶化使得薄膜结构的有序度更高,晶化降低了薄膜的1/f噪声。

The electrical resistivity as low as 1.7×10-4Ω·cm was obtained, and the average total visible light transmittance of the IMO film with the glass substrate was over 80%. Plasmatic wavelength method, van der Pauw method and optical spectra fitting method were applied to measure and compare the carrier concentrations of IMO and ITO.

采用等离子振荡波长法、van-der-Pauw法和光谱拟合法等三种方法对IMO薄膜和ITO薄膜的载流子浓度进行了测量和比较,结果表明IMO薄膜的载流子浓度还不到ITO薄膜的三分之一。

In the deep processing of agricultural and food products, there are some key technological problems of system design on the domestic traditional reelable vacuum aluminium coating system, including mass process parameters, bad process duplication, unstable production quality caused by complex operation, and high equipment failure rate. A newly developed reelable vacuum aluminium coating system with 1500 mm-wide thin plastic films was designed with high vacuum technology in order to satisfy the vacuum aluminum coating of more than 1500 mm-wide, such as polyethylene terephthalate, oriented polypropylene, polypropylene cast film, polyvinyl chloride.

为满足农产品及食品深加工中1500 mm幅宽以上的聚脂薄膜、定向聚丙烯薄膜、聚丙烯流涎薄膜、聚乙烯薄膜的真空镀铝,针对国内卷绕蒸发式真空镀膜机设备存在的工艺参数多、工艺重复性差、操作复杂、产品质量不稳定、设备故障率高等问题,采用高真空技术研制了宽幅卷绕蒸发式高真空镀膜机。

EDS and Surface-profile results indicate that the stoichiometries of all the samples approach 2:3 and the thicknesses are over 500nm. XRD results indicate that the major diffraction peaks of the film match those of Bi2Te3.The film growth exhibits preferred orientation at (015) phase and many Bi, impurity peaks are observed. Hall and Seebeck coefficient measurement reveals that all the samples are n-type with the carrier density of 10^23cm^-3 and conductivity of 10^-5Sm^-1 which confirm the samples have nice thermoelectrically properties.

能谱分析和台阶仪测量结果显示本文所制备的薄膜Bi:Te原子比接近2:3,厚度都大于500nm;XRD测量结果显示薄膜的主要衍射峰与Bi2Te3标准衍射峰相同,在(015)晶面上择优选向明显,有少量的Bi、杂质峰存在;霍尔系数测试及Seebeck系数测量结果显示,薄膜都为n型半导体薄膜,载流子浓度量级为10^23cm^-3,电导率量级10^-5Sm^-1,具有良好的电学性能。

Small height fluctuations were artificially introduced to the thin film samples by mechanically rubbing the sample surface with a rayon cloth before dewetting initiates. By comparing the dewetting morphology evolution and the characteristic length of dewetting structures of unrubbed and rubbed samples, the results clearly show that the dewetting mechanism for thinner polystyrene films with h≤13. 3nm is spinodal dewetting and that for thicker films with h≥13. 3nm is heterogeneous nucleation dewetting.

通过用绒布在薄膜表面进行摩擦,人为的引入一定程度的厚度涨落,通过比较有和没有表面涨落的薄膜的去湿形貌,可以清楚的识别出厚度小于13.3nm的聚苯乙烯薄膜的破坏机理为旋节去湿,而厚度大于13.3nm的聚苯乙烯薄膜的破坏机理则为成核去湿,形成双连续结构或孔洞都可以导致薄膜的旋节去湿。

The intensity ratio of TO and LO inMCT was observed to be different. Such difference was explained in terms of the different Ramangeometry arrangement.〓. The laser-induced micro-photoluminescence in the range of 1000~5000〓(1.34eV~1.83eV) was found for the first time in LPE MCT epilayer. The center of photoluminescence wasat 2750〓 or 1.62eV and the FWHM of luminescence was 2000〓 or 0.25eV. We assume thatthe photoluminescence is due to recombination of electron from an anion vacancy resonance levelto the top of valance. In addition, new Raman shift was observed at 750〓 in LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i.e., 1.73eV above the conduction band edge.

2首次在LPE生长的碲镉汞外延薄膜的显微Raman谱中,在1000~5000〓范围发现了激光激发显微荧光,该荧光的发光范围换算为电子伏特标度为1.34eV~1.83eV,荧光的发光中心大约位于2750〓,即1.62eV,发光的半峰高宽约为2000〓或0.25eV;指出该显微荧光来源于碲镉汞薄膜中的阴性离子空位共振能级的激光激发发光;观察到了碲镉汞外延薄膜中一个新的Raman散射峰,位于750〓位置; 3首次在一块用MOVPE方法生长的〓Te外延薄膜的显微Raman谱中,发现了1.46eV至2.21eV范围并伴随有周期结构的显微荧光峰,该发光峰对应的能带中心位于〓Te材料导带底上方1.73eV,通过研究得出样品在1.46eV至2.21eV范围的显微荧光峰是由于改进 MOCVD 生长工艺,提高了碲镉汞外延薄膜的结构质量所致;通过分析指出该显微荧光来源于外延层中的阴性离子空位的共振能级发光。

The crystalline defects of metallic substrate can promote the formation of multi-crystal thin films. In contrast, the films on the Si single crystal are basically amorphous; The hardness of films are mainly determined by N concentration. The highest hardnesses of Si〓N〓 and TiN films ware obtained at 1. 1 of N/Si and 0.96 of N/Ti respectively. The hardness of Si〓N〓 film decreased dramatically when the free silicon atoms present.

发现薄膜中N原子百分含量主要受氮离子束流和氮气分压的控制,随着氮离子束流和氮气分压的提高,N/Si和N/Ti原子比增加;膜的组织结构则主要受轰击离子束压和基体种类的影响,高的轰击束压可以抑制薄膜的择优取向,金属基体上的晶体缺陷使薄膜易于形成多晶,而单晶硅上的薄膜基本上为非晶态;薄膜的硬度受氮含量的影响最大。

The results showed that with the increase of nitride partial pressure in the range of 2. 0~8. 0×10〓Pa, the hardness of NbN, TaN single layer films decreased, but the hardness of TiN films kept unchanged. The crystal structure of TaN films changed from the mixture of tetragonal β-Ta and faced-center cubic δ-TaN to hexagonal TaN and that of NbN films from FCC δ-NbN to hexagonal ε-NbN. The crystal structure of TiN films is FCC in all the range of partial pressure researched.

研究结果表明:在2.0~8.0×10〓pa的氮分压之间,随氮分压的升高,TaN和NbN薄膜硬度下降,而TiN薄膜的硬度值不随氮分压的变化而变化;TaN薄膜的相结构由低氮分压时的正方β-Ta和面心δ-TaN所组成的两相混合物过渡到六方TaN结构,NbN薄膜则由面心立方结构的δ-NbN逐渐过渡到六方结构ε-NbN,而TiN薄膜的晶体结构基本不随氮分压的变化而变化,均为面心立方结构。

The TiO2 thin film on quartz glass is prepared by Liquid Phase Deposition method. The thicknesses of the films are determined by a spectrophotometer. The influence factors on the thicknesses such as ultrasonic vibration, times of sedimentation, sedimentation time and concentration of TiO2 colloid are investigated. A mathematical model of sedimentation is set up on the basis of gas adsorption theory.A photocatalytic continual tub reactor is set up.

本论文介绍了纳米TiO_2光催化降解甲醛的机理;用液相沉积法在石英基片上制备出纳米TiO_2薄膜,利用分光光度计间接测量TiO_2薄膜厚度,研究了超声波震荡、胶体浓度、沉积时间及沉积次数对薄膜厚度的影响;借鉴气体吸附理论,初步建立了制备TiO_2薄膜的沉积动力学模型。

In fixed photocatalytic reactor, nanosized TiO2/glass film was high in adsorption, the fastness of film was ideal and it had the ability resisting the attach of medium that influence the lifetime of film under bad environment. The film lifetime was long.

固定相光催化反应器中,纳米Ti02/玻璃薄膜具备比较高的吸附性能,薄膜的牢固性能理想,具有抵抗不良环境下介质对薄膜使用寿命危害的性能,薄膜的使用寿命良好。

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