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The key to make bi-epitaxial film is to control the epitaxial growth of multi-layer different materials.

制备双外延薄膜的关键是要实现薄膜的多层异质外延生长。

In this paper, we deposited Cr films on Zircaloy substrate by D.C magnetron sputtering, and made a preliminary study on the microstructure of these films and the properties of microhardness and adhesion.

本文采用直流磁控溅射技术在锆合金基体上沉积制备了Cr膜,对不同处理条件下薄膜的微观形貌、结构以及薄膜的显微硬度和附着性进行了研究探讨。

In the process of silicon nitride thin film prepared by PECVD, deposition parameters strongly influence the properties of silicon nitride thin film.

在PECVD 氮化硅薄膜的实验中,沉积参数在很大程度上影响乃至决定着氮化硅薄膜的性能。

Dianmond films were deposited on Al2O3 ceramic substrates by oxygen-acetylene flame, the morphologics and their distribution of deposited films on the substrate surfaces were also observed.

用氧气-乙炔火焰法在氧化铝陶瓷片上沉积出了金刚石薄膜,并观察了薄膜的形貌结构及其在基片上的分布规律。

We can acquire resonators of different frequency , by controlling the thickness of AlN flim and NbN film.

通过控制AlN薄膜和NbN薄膜的不同厚度,可以获得不同频段范围的谐振器。

Tin oxide films were prepared under different deposition conditions.

在不同的工艺条件下制备了氧化锡薄膜,对影响薄膜的生长条件,主要是温度和环境压力等参数进行了研究。

The surface resistivity and electric hysteresis loop of ferroelectric ultrathin films have been studied also.

通过石英晶体微天平实时监测超薄膜的沉积,并研究了超薄膜的表面形貌、结构及电性能。

The Al2O3 thin films are grown on silicon substrates by radio frequency mag时tron sputtering and are annealed in the nitrogen gru弓at different temperatures.

本文采用射频磁控溅射技术在单晶硅衬底上制备了Al2O3 薄膜,并在氮气中进行了不同温度的退火,对比了退火前后薄膜的结构和光致发光特性。

Plasma assisted molecular beam epitaxy was employed to prepare ZnO thin films on Si(111) substrate.

在Si(111)衬底上利用等离子体辅助分子束外延生长氧化锌薄膜,研究了在不同衬底生长温度下(350~750℃)制备的ZnO薄膜的结构和光学性质。

In this thesis, a set of DC are plasma jet system is set up to produce diamond films.

本文自行设计和建立了一套直流电弧等离子体喷射法制备金刚石薄膜的系统,制备出了高质量的金刚石薄膜,沉积速度达到65μm/h。

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然而,正如其名字所指出的那样,CD盘不能写,也不能用任何方式改变其内容。

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