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Influence of film thickness on its optical properties, including reflectance, transmittance and absorptance, was studied at wavelengths of 310, 350, 400, 430, 550, 632, 800 and 1200 nm, respectively.

选定波长为310、350、400、430、550、632、800、1200nm时对薄膜的反射率、透射率和吸收率随薄膜厚度变化的关系进行讨论。

The electrical properties of the films were characterized by their room temperature electrical conductivity and the activation energy.

利用薄膜的暗电导和激活能对硅薄膜的电学特性进行了表征。

Proper adulteration can improve the capability of the films.

掺杂会破坏薄膜的结构,影响薄膜的透射性能。

The optical transmission decreased when the film annealed in air was subjected to 20% CO at 350℃.

对于经过空气气氛中热处理的薄膜,在350℃通20%CO,薄膜的透射比下降。

A contact angle of water on the film is in a range of 5 to 30 DEG , and an average surface roughness of the film is 5 nm or less.

水在薄膜表面上的接触角在5-30°范围内,薄膜的平均表面糙度为5nm或以下。

This paper focuses on the fabrication of the film by the method of hot wire assistance chemical vapor deposition.

本文主要研究了热丝辅助裂解电阻蒸发法制备该薄膜的制备工艺,并采用红外、质谱和热重等分析方法对薄膜的成分进行初步分析。

It was found that recrystallization temperature mainly depends on crystallite size of as--received films.

沉积态薄膜的晶粒尺寸是影响薄膜再结晶温度的主要因素。

The electrochemical quartz crystal microbalance, cyclic voltammetry, and SEM were used to study the growth mechanism of the mixed of osmium hexachloroplatinate (OsPtCl6), osmium oxide and platinum films.

本实验使用电化学石英晶体微天平、扫描式电子显微仪及循环伏安法来研究锇氧化物/铂/锇铂氯化物薄膜的沉积与薄膜成长之机制及电化学特性。

This paper presents a comprehensive introduction of metal oxides thin film, especially research and application of antimony-doped tin oxide conductors.

本论文介绍了金属氧化物薄膜,特别是锑掺杂二氧化锡薄膜的研究现状以及应用领域。

The electrochemical quartz crystal microbalance, cyclic voltammetry, and SEM were used to study the growth mechanism of the hybrid of ruthenium oxide, ruthenium oxide/hexachloroiridate(RuOx /IrCl6), platinum, and ruthenium oxide/hexachloroiridate/platinum (RuOx/IrCl62-/Pt) hybrid films.

本实验使用电化学石英晶体微天平、扫描式电子显微仪及循环伏安法来研究各薄膜的沉积与薄膜成长之机制及电化学特性。

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