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XRD shows: when the value of x is between 0.1 and 0.3, the alloying thin film remains the structure of hexagonal wurtzite and the angle of (002) diffraction peak becomes bigger as the value of X increases; The photoluminescence spectra at room temperature shows that the PL spectra of the alloying thin film is composed of the stronger UV emission band and weaker visible band, and UV emission peak will have the blue shift with the content of Mg increasing and the visible emission weakened.

XRD衍射测试表明:在0.1<x<0.3范围内,合金薄膜仍然保持氧化锌六角型纤锌矿结构,(002)衍射峰位随x的增大向大角度方向移动,在X≥0.3的范围内,合金薄膜的结构则为氧化锌和氧化镁的混合结构;室温光致发光谱表明:ZnMgO合金薄膜PL谱都是由较强的紫外发射带组成,且随着Mg含量的增加紫外发射峰位发生蓝移,同时可见发射增强。

Because of these advantages of the lead oxide, the lead oxide thin films are widely used in the transparent conductive oxide thin films, camera tube, photoconductive detector, electrode materials, gas sensor and many other fields.

本文综合论述了金属氧化物薄膜的一些主要的制备方法,氧化铅的基本性质以及在现代技术中的一些应用和最新的进展,首次采用直流反应磁控溅射方法制备了氧化铅薄膜,并研究了工艺参数对氧化铅薄膜的晶体结构,光学性质的影响。

Seventh: The sol-gel method developed here for the synthesis of nanocrystalline film gate are compatible with conventional silicon planar technology, and there is no any limitation to the polarity of the film type n or p for making different kinds of nanocrystalline-film-gate-OSFET sensor. This is a very important basic work for the extending, improving and integrating of the similar devices.

七、研究开发的制备氧化物及复合氧化物纳米晶薄膜的溶胶—凝胶工艺可以实现与硅平面工艺兼容,采用该工艺可以制作不同纳米薄膜栅的OSFET新型气敏元件,薄膜的导电类型不受限制,可以是N型的,也可以是P型半导体,为该种类器件的推广和改进以及进一步的集成化创造了基础。

Compared with PF6P, the attachment of alkyl or alkoxyl groups on phenylene effectively inhibits the formation of fluorenone-based excimers and thus remarkably improves the thermal stability of the spectra.3. Morphology and phase behavior of the polymers substituted with alkyl and alkoxyl groups on phenylene were investigated by differential scanning calorimetry, X-ray diffraction and other techniques.

一方面,未取代的PF6P薄膜和烷氧基取代苯的PF60C6薄膜在空气中退火后都产生了芴酮结构,随退火温度的升高所生成的芴酮结构的含量逐渐增大;另一方面,新的长波发射随退火温度的升高其荧光寿命明显增加,因此确定PF6P空气退火薄膜的长波发射是来源于芴酮的激基缔合物。

Appear principle teacher to make such explanatory normally to adding those who show film when film ply is incident light when the 1/4 that grows in filmy medium wave, going up filmily, the road path difference of the reflex below is equal to half wavelengh fitly, offset each other consequently.

对于增透膜的增透原理老师通常作这样的解释当薄膜的厚度是入射光在薄膜中波长的1/4时,在薄膜的上、下面的反射光的路程差恰好等于半个波长,因而相互抵消。

The results in this paper are concluded as follows:(1) Rolling contact fatigue has been used to examine the interfacial reaction products and study the mechanism of ion beam intermixing effect on the adhesion of Cr-N coating on steel by IBAD.

对多次冲击条件下薄膜的失效抗力及其与薄膜力学性能之间的关系进行了初步探讨,得到如下结果:(1)用滚动接触疲劳法检测离子轰击导致的界面反应产物和研究离子束共混对钢基体上IBAD沉积Cr-N薄膜结合强度的影响本质,结果表明,滚动接触疲劳能有效地分析界面最薄弱位置和评估界面反应产物,滚动接触疲劳引起的剥落可作为研究界面反应产物对结合强度影响的根据。

IR spectrum by force to discover around 393 Nm, the Si with the compound and filmy Ti3+/SiO2 that MTES decorates, the absorption of OH peak intensity is filmier than Ti3+/SiO2 reduce slightly, si, O, the absorption of Si the peak increases apparently, show structure of network of oxygen of compound and filmy silicon is more regular, the film of even and dispersive.

IR光谱发现,MTES修饰的Ti3+/SiO2复合薄膜的Si—OH的吸收峰强度比Ti3+/SiO2薄膜的略减小,Si—O—Si的吸收峰明显增强,表明复合薄膜硅氧网络结构更规则,有利于Ti3+的均匀分散。

Then we studied the photothermal deflection on membrane with high transparence for the first time. When the product of the thermal conductivity and thickness of film is correspond to that of substrate, the thermal conductivity and diffusivity of film could be measured by photo-thermal deflection method.

然后,第一次探讨了透明性好的带衬底的薄膜材料的光热偏转理论,讨论了只有在薄膜热导率与厚度的乘积与衬底的热导率与厚度的积相比拟时,可以使用光热偏转方法测量薄膜的热导率和热扩散率。

The results show that:(1)the low-noise source-follower circuit can be effectively used to measure the output of PVDF thin film;(2)the piezoelectric coefficient D33 of the PVDF is very sensitive on temperatures;(3)the value of D33 intensively fluctuate in initial loading stage,this means that a pre-load is needed in practice application to keep a constant piezoelectric coefficient D33 of the PVDF;(4)when the compressive load is imposed on the surface of the PVDF along a incline direction,D33 value is obvious changed with changing incline angle,and(5)the frequency bandwidth of the PVDF thin film is very wide,it is more suitable to measure strike or impact loading at various loading conditions.

结果表明:(1)低噪声源跟随电路可有效测量PVDF 薄膜输出;(2)PVDF压电薄膜的压电系数D33对温度很敏感;(3)D33值在加载初始阶段波动很大,所以实际应用中应给PVDF提供一个预压载荷,以确保有一恒定的压电系数D33;(4)当压载荷沿倾斜方向作用在PVDF 表面时,由于有剪切力作用,D33 值会随着倾斜角的变化发生显著改变;(5)PVDF 薄膜具有很宽的频响,更适用于测定不同载荷条件下的侵彻或冲击等动态载荷。

One of them is based on etched porous alumina and carbon-gold-carbon compound film. The alumnia film surface is composed of rows of valleys with diameter of about 300 nm, and is realized by etching porous alumina in diluted phosphorous acid.

第一种阴极采用基于多孔氧化铝和无定形碳的双层传导薄膜,其中氧化铝薄膜的表面具有横向尺寸为300 nm的特殊凹陷结构,是对常规多孔氧化铝薄膜进行腐蚀形成的。

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