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Experiment on photosensitivity characteristics of the samples preformed both at room and high temperature (410℃), respectively.

对薄膜在室温和较高温度(410℃)下进行光敏特性测试,结果表明,薄膜的制备工艺参量对其光敏特性有较大影响;较高温度下其敏感特性和室温下测试的结果大体一致;在合适条件下制备的薄膜对不同波长的光有较好的敏感特性。

The measurement of 1/f noise in amorphous, microcrystalline and polymorphous silicon film was performanced with a self-design semiconductor system.

研究不同厚度的非晶、微晶和多形硅三种氢化硅薄膜的热导率结果表明微晶硅薄膜的晶化增大了薄膜的热导率。

The results show that carefully controlling of deposition conditions and final polishing of the specimens enable us to deposit antireflective infrared diamond coatings on silicon substrate. In order to investigate the thermal properties of diamond coatings nondestructive photo-thermal radiometry method is used with computer simulation and data analysis to get thermal diffusivity and conductivity of the specimens.

本文用光热辐射计量学(Photo-Thermal Radiometry,PTR)方法对于金刚石薄膜的热学特性作了研究,用计算机模拟了热波在样品中的传播过程,用非接触无损检测方法测量了样品,并对测量结果用计算机作数据分析,计算获得金刚石薄膜的热扩散系数及热导率,为金刚石薄膜在热学方面的应用打下了基础。

By means of zone melting recrystallization method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer.

经区熔再结晶后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层。

With this EBT model, we successfully predicts how to optimize post annealing conditions and get the giant magnetooptic Ce-substituted YIG thin films for waveguide applications.

对Ce1YIG薄膜的溅射工艺及后续的晶化处理工艺进行了研究,得到了如下主要结论:成功地在非晶态的二氧化硅基片上用溅射法制备了非晶的Ce1YIG薄膜,并进行了后续晶化处理,得到了晶化的Ce1YIG薄膜。

LNO films from metalorganic precursors have revealed some attractive advantages such as lower grown temperature (~530℃), dense and uniform surface morphology and excellent metallic conductivity.

在薄膜热处理工艺的研究中首次发现:在热分解及LNO的晶化过程中,薄膜中的氧扩散是影响LNO薄膜的结晶温度和导电性能的关键因素。

To improve the photoemissive sensitivity of nanoparticle composite photoemissive thin film and to fill the blank of rare earth application research in the field of photoemissive material, the rare earth elements are introduced into nanoparticle composite photoemissive thin film in the first time.

本文以纳米粒子复合光电发射薄膜需要进一步提高光电灵敏度为出发点,以稀土元素独特的性质及其应用研究在光电发射材料方面的空白点为切入点,首次将稀土元素引入到纳米粒子复合光电发射薄膜中,对现有的纳米粒子复合光电薄膜的光电发射性能进行改善和提高。

Preparation and microstructure GAMs were successfully embedded in SiO〓 thin film by magnetron r. f. cosputtering technique. The microstructure of thin films were characterized by XRD and TEM.

一、薄膜的制备和显微结构采用射频磁控共溅射法成功地制备了GaAs颗粒均匀地弥散在SiO〓介质中的薄膜,薄膜中GaAs颗粒所占的体积分数高达15%以上,GaAs颗粒的平均直径为纳米量级。

The DLC film deposited at substrate temperature of 100℃ shows the best integrated property with carbon content of sp〓 bonding state up to 40% which is two times more than that in the films prepared by Americans with the same method. Accordingly, the microhardness is up to 30Gpa, and friction coefficient and optical band gap decrease to 0.10 and 1. 76eV respectively. It is found that sp〓C content in DLC films decreases with the increasing substrate temperature in the process of film deposition, especially after 300℃.

当基片温度为100〓C时沉积的DLC薄膜的综合性能最好,此时沉积的DLC薄膜中sp〓C含量最高,达到40%多,是美国学者用同种方法所得结果的2倍;由于薄膜sp〓C的含量高使得其显微硬度达到30GPa,摩擦系数最小为0.10,光学带隙最宽为1.76eV。

At first, the difference of the iron chloride and iron nitrate precursor was studied. By the photoelectrochemical results, the film prepared by iron chloride precursor showed better photoelectrochemical response than the film prepared by iron nitrate precursor, and the reasons were discussed.

研究中首先比较使用氯化铁前驱液与硝酸铁前驱液所制备出的氧化铁薄膜的差异,由实验结果知道,使用氯化铁前驱液的薄膜,其光电化学表现比使用硝酸铁前驱液的薄膜来得好,而研究中也探讨了其可能的原因。

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