薄膜电阻

But if addition of static field was overhigh,RhB would directly take place electric oxidation, ITO/TiO_2/CdS composite films justacted as a conductive electrode with very large resistance, so the degradation rate ofITO/TiO_2/CdS composite films to RhB reduced instead.

如果外加电位过高，RhB就会直接发生电氧化，ITO／TiO_2／CdS复合薄膜只是作为一个电阻很大的电极来导电，所以本应该作为催化主体的ITO／TiO_2／CdS复合薄膜对RhB的降解率反而降低。

The influence of sputtering pressure on structure character,morphology,overpotential,resistivity and growth rate was studied.

采用对靶直流磁控溅射设备制备镍铁氧化物催化薄膜，研究了溅射气压与催化薄膜的结构、表面形貌、过电位、电阻率及生长速率之间的关系。

The Bi2Te3 film is p-type semiconductor film, and the resistivity will decrease along with the thickness increasing of films.

得到的P-型半导体Bi2Te3薄膜，其电阻率随薄膜厚度的增大而减小。

X-ray diffraction was used to analyze the crystal structure and the field-emission scanning electron microscopy inspected the surface and cross-sectional morphology. X-ray photoelectron spectroscopy is used to determine the film composition. The optical transmittance, electric resistance, Hall Effect, and Seebeck coefficient were measured. It was found in XRD patterns that all samples possess In2O3 structure.

在特性量测方面，分别以X光绕射分析其晶体结构，场发射扫瞄式电子显微镜分析其表面及断面型态，以X光电子能谱分析仪分析薄膜成份，并搭配光穿透率、电阻率、霍尔效应及Seebeck系数等特性分析，探讨经热处理之后薄膜的热电特性变化。

Two Chinese Invention Patents, which titled " Manganin thin film ultra-high pressure sensors" and "Preparation method of manganin thin films with low temperature coefficient of resistance", have been applied based on the above original work of this thesis.

以上第l～3创新点及第5创新点已经分别申请了两项中国发明专利："薄膜式锰铜超高压力传感器"和"低电阻温度系数锰铜薄膜的制备方法"。

In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon thin layer ( heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cell structure of p/i/n are fabricated. The substrate is a typical 4-inch n-type wafer with (100) crystal orientation, 1~10 ohm-cm and about 525 μm thickness. The p and i a-Si:H layers are deposited by a 13.56 MHz plasma enhanced chemical vapor deposition. The i a-Si:H layers are especially deposited by pulse-wave modulation plasma technique with fixed plasma turn-off time toff = 10 ms and changed plasma turn-on time ton= 10 to 40 ms to selectively control the different silicon to hydrogen bonding configurations. The effect of various Si:H bonds on the performance of HIT solar cells are explored.

中文摘要本论文针对异质接面薄本质层(heterojunction with intrinsic thin layer： HIT)太阳电池进行研究，采用一般典型四英吋晶向为(100，厚度约为525 μm，电阻率约为 1~10 ohm-cmn型矽晶圆为基板，制作p/i/n太阳电池，p及i层薄膜以13.56 MHz电浆加强化学气相沈积，i层并采用脉波调变电浆技术，在固定电浆关闭时间toff = 10 ms及改变电浆开启时间由ton = 10 ms 至40 ms条件下制作具有不同矽氢键结微结构的氢化非晶矽薄膜以探讨不同矽氢键结对太阳电池性能的影响。

Study on transmission spectrum of ZnO films;2. Study of Measuring Grating Parameters with Transmission Spectrum and Design of Perfect Anti-reflection Coating;3. Kinetics of the oxidation process of the copper films in the thickness range of 16～22 nm at 140 ℃ was studied by using transmission spectrum and sheet resistance methods.

采用方块电阻和透射光谱两种方法为表征手段，测量16～22nm范围内不同厚度Cu薄膜在140℃下完全氧化所需要的时间，得到了Cu薄膜氧化反应的动力学曲线，并利用X射线衍射分析了氧化产物的晶相结构和成分。

NiFe has excellent soft magnetic properties and AMR effect,yet it is sensitive to thebuffer.

NiFe薄膜具有良好的软磁性能和各向异性磁电阻效应，但是其性能对薄膜的过渡层非常敏感。

The membrane potential of oil-bearing shaly sand is the key to evaluate reservoir with the spontaneous potential log.

根据含油岩石的薄膜电位实验测量，研究薄膜电位与储层含油性、泥质含量的关系，并用以指导泥浆电阻率的设计。

The stoichiometrical preferred orientation AlN (100) polycrystalline films were deposited on Si (100) wafers with D E =1.0 J·cm -2 , P N 2 =13.333 kP...

分析表明薄膜是具有高取向性的AlN（100）多晶膜，薄膜的能带间隙约为6.2eV，其电阻率和击穿电场分别为2×1013Ω·cm和3×106V·cm－1。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。