薄膜电阻

The results of theoretical analysis and experiments indicate that in the frequency band of 10 to 3 000 MHz and voltage range of 0.1 to 2 V,the uncertainty is 0.25% to 0.7% and the confidence level is 99.73%. Metrology ; Voltage standard ; Bolovac ; Thin film bolometric bridge with resistance regulation network circuit ; Double thin film bolometer ; RF mount ; Uncertainty evaluation

在近期的技术改造[2]中，我们研制出电阻臂可变的自动平衡电桥，重新研制了双薄膜测热电阻，建立了射频电压自动校准系统，从而使该基准的计量性能有了很大提高，其主要技术指标如下：测量范围为0·1~2·0V；频率范围为10~3 000MHz；不确定度为0·25%~0·7%(k=3)；工作方式为自动测试。2工作原理和构成2.1工作原理射频电压基准是建立在功率替代原理的基础

This paper focuses on the fabrication of the film by the method of hot wire assistance chemical vapor deposition.

本文主要研究了热丝辅助裂解电阻蒸发法制备该薄膜的制备工艺，并采用红外、质谱和热重等分析方法对薄膜的成分进行初步分析。

First SnCl2·2H2O and SbCl3 were dissolved with ethyl alcohol respectively,then nesa coatings were prepared with different ratio of Sb/Sn sols by different methods as such dipping-coating,spraying and spinning .

将SnCl2.2H2O和SbCl3分别溶解于乙醇中，搅拌至完全溶解，以不同的Sb/Sb混合制备得到溶胶后，分别采用浸渍提拉、喷涂、旋涂工艺制备透明导电膜，并考察了不同制备工艺及热处理温度对膜的厚度、薄膜方块电阻以及对薄膜透光率的影响，运用XRD、SEM、TEM对所制备的透明导电膜进行了分析表征。

In order to provide a photo detector in which the generation of spontaneous noise is suppressed and external noise is effectively reduced, a p-type diffusion layer is provided on the obverse side of an n-type semiconductor substrate, a p-type low-resistance layer is provided on the obverse side of the p-type diffusion layer, a lead frame is provided on the reverse side of the n-type semiconductor substrate with an insulative resin film in between, and the p-type low-resistance layer is electrically connected to the lead frame.

为了提供能够抑制自发噪声的产生并有效地减少外部噪声的光检测器，在n型半导体衬底正面设置p型扩散层，在p型扩散层正面设置p型低电阻层，在n型半导体衬底的反面设置引线框架、中间夹有绝缘树脂薄膜，p型低电阻层电连接到引线框架。

The VO x(x.5) film has a negative temperature coefficient of resistance of (-1~-4)%K -1 ,and an activation energy of 0.078eV~0.110eV.

对不同温度退火后氧化钒薄膜在10～100℃范围内测定了薄层电阻随温度的变化，得到的电阻温度系数值为(-1～-4)%K-1。

This paper gives a brief introduction for the classification, development and application of magnetoresistance effect and focuses on giant magnetoresistance effect, including multilayer magnetic resistance film, spin valve, membrana granulosa, spin tunnel magneto-resistor, discrete multilayer film and so on.

求助摘要翻译本文简要介绍了磁电阻效应的分类、发展历程及其应用，重点介绍了巨磁电阻效应，包括多层磁阻薄膜、自旋阀、颗粒膜、自

We have measured the in-plane and out-of-plane resistivity of epitaxial Bi-2201 films grown on untilted and tilted(001)SrTiO3substrates.

测量了Bi2Sr2-xLaxCuO6薄膜样品的电阻率，得到了正常态平面电阻率ρab与温度的正比关系。

But so far as the doped quantity of MoOs less than 5%, the abrupt electrical resistance change of the doped film still can reach 2 orders of magnitude, and commonly cant affect its application, so it is hopeful that temperature of the abrupt electrical resistance change can be reduced to room temperature scope.

不过只要MoO3掺杂量不高于5％时，掺杂薄膜的电阻突变仍可保持2个量级以上，一般不影响其使用功能，因此有望使电阻突变温度降至室温范围。

The interlayer structure of the film device has the speciality of stable double inversing electricity, and the resistance ratio of the high resistance state and the low resistance state is usually 106 to 107 fold and even higher.

这种夹层结构的薄膜器件具有稳定的可逆电双稳特性；高电阻态和低电阻态的阻值比通常为106～107倍，甚至可以更高。

The electrical properties, including surface resistance, volume resistance, breakdown strength and dielectric constant were researched mainly.

重点研究了薄膜的电性能，包括表面电阻、体积电阻、击穿强度以及介电常数等。

According to the clear water experiment, aeration performance of the new equipment is good with high total oxygen transfer coefficient and oxygen utilization ratio.

曝气设备的动力效率在叶轮转速为120rpm～150rpm时取得最大值，此时氧利用率和充氧能力也具有较高值。

The environmental stability of that world - including its crushing pressures and icy darkness - means that some of its most famous inhabitants have survived for eons as evolutionary throwbacks, their bodies undergoing little change.

稳定的海底环境─包括能把人压扁的压力和冰冷的黑暗─意谓海底某些最知名的栖居生物已以演化返祖的样态活了万世，形体几无变化。