薄膜电阻

The results indicate that the thermal conductivity of Si3N4 thin film increases with the temperature;under high frequency stage the frequency has apparent effect on the thermal con...

测试结果表明：Si3N4薄膜的热导率随温度的升高而增大；高频段下，热导率受频率影响大，误差大；在低频段下薄膜热导率与频率变化基本无关；基于电子与声子的局部热平衡运输方程假设，S i3N4薄膜的热导率具有极度非平衡性；通过比较电阻、热导率与温度的关系可以看出加热器的尺寸大小会影响薄膜的热导率，最佳加热器的宽度选用20μm左右。

It was found that the resisitivity of TiO2 thin films varied in the range from conductor, semiconductor to nonconductor in room temperature.

室温下测量TiO2薄膜的电阻率发现，随着厚度的增加TiO2薄膜的电阻率先后在导体、半导体和绝缘体范围变化。

It was found that the resistivity of the TiO2, thin films deposited on Ti and Ti substrates increased non-linearly with the increase of the thickness of the films and varied in the range from conductor or semiconductor to nonconductor, respectively. The conducting layer thickness of the films deposited on different substarte materials is different and the films deposited on glass are nonconductors.

结果表明，沈积在Ti和Si基底上的TiO2薄膜的电阻率随著膜厚的增加而非线性增大，分别经历了导体、半导体到绝缘体或半导体到绝缘体的电阻率范围的变化过程， TiO2薄膜导电层厚度也不相同，沈积在玻璃表面TiO2薄膜为绝缘体。

The anisotropic magnetoresistance and saturation magnetic field of the Permalloy thin films (Ni0.81Fe0.19) sputtered on a nonmagnetic (Ni0.81Fe0.19)0.66Cr0.34 buffer layer were measured. The AMR variations of the films after annealing and the size effect of the AMR stripes after etching were emphatically studied, and a qualitative analysis was proposed through a statistic model. The simulation results agree with the experiments.

研究了以非磁性（Ni0.81Fe0.19）0.66CR0.34薄膜作为过诞层的坡莫合金Ni0.81Fe0.19薄膜的磁电阻效应和饱和磁场，分析退火处理对样品饱和磁场的影响和经刻蚀后的磁电阻效应膜线的尺寸效应，并建立一个统计模型定性分析了其性能变化的机理，计算结果符合实验。

Similarly, the AMR begin to increase and then decrease with increasing the thickness d of the seed layer, and has a maximum value at a critical thickness d of 5.32nm. Compared to the permalloy films deposited on Ta seed layer ,the AMR enhancement of 10%-46% is observed in the permallay films deposited on (Ni0.82Fe0.18)1-xNbx seed layer.(2) The coercivity Hc1 obtained for magnetic field H applied paralley to the easyaxis is large than Hc2 for H applied perpendicular to the in-plane easy axis, and both of coercivity are consistent with the change of x.

2沿样品易轴方向的矫顽力Hc_1比难轴方向的矫顽力Hc_2大，两者随Nb原子的百分含量x的变化是一致的，饱和磁化强度Ms随x的增大先增大后减小，在x=27.1％处，Hc_1和Hc_2都比较小，而Ms则达到最大；种子层厚度d不能明显改变坡莫合金薄膜的磁性能；与以传统材料Ta为种子层的坡莫合金薄膜相比，以Ni_(0.82Fe_(0.18)_(0.829)Nb_(0.271)为种子层的坡莫合金薄膜的矫顽力只有轻微减小，但是Msg 以w讪Fq.t）lkNk为种于层的坡莫合全薄膜的各向异性戳电阻及磁性能研究却要大，mk坡莫合金层厂度！

Cu doped ZnO thin film can detect 100 ppb propyl alcohol vapor, while Mn doped ZnO thin film exhibits high sensitivity to NH3 and H2O vapor.Furthermore, the photoluminescence properties of ZnO and Tb doped ZnO thin films, heat-treated in different atmospheres, were carried out.

薄膜气敏性研究表明，Ti的掺杂使ZnO膜电阻降低；Cu的掺杂使薄膜对正丙醇的选择性增高，可检测痕量(100 ppb)的正丙醇：Mn掺杂薄膜显示出很好的氨敏和湿敏性能。

In this dissertation,Co-Cr2O3 and Fe-Cr2O3 granular films with superiorproperties have been successfully fabricated by RF co-sputtering technique underroom and 77K substrate temperatures for the first time.The microstructure,electrical transport and magnetic properties as well as their relation to TMR effectare systematically investigated by various techniques such as X-Ray diffraction,transmission electron microscopy,electrical diffraction,X-Rayphotoelectron spectroscopyand VSM,etc.,the change of electrical transportand magnetic properties in these films with their microstructure is also shown.Someinteresting and valuable results have been obtained after the theoretical fitting ofexperimental data with the existed theory.The temperature dependence of TMReffects in these films and the way to get larger TMR effect is also studied.Our mainprincipal results obtained are as follows:(1)Microstructure and Magnetism

在本论文中，我们采用射频共溅射方法，在室温及77K的衬底温度下首次成功地制备了性能优异的Co-Cr2O3及Fe-Cr2O3系列颗粒薄膜，并利用X-Ray衍射、透射电镜、电子衍射、X-Ray光电子谱及宏观电性及磁性测量等手段详细地研究了Co-Cr2O3颗粒膜的微结构、电性、磁性及它们与TMR效应之间的关系，系统地研究了薄膜的电性和磁性随薄膜微结构的变化，通过实验数据点的理论拟合，得出了一些有价值的物理信息，探讨了磁电阻效应的温度依赖性及获得较大TMR效应的途径，主要内容可概括如下

The grain size of the films increased with the increase of substrate temperature, deposition time and atomizing rate of precursor.

基片温度对薄膜的组成影响较大，高沉积温度会导致LaNiO〓薄膜的分解，使薄膜的电阻率异常增大。

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The result of research indicates the In-doped mol proportion of 4% improves the structure of thin films effectively so as to increase its ultraviolet-visible light transmissivity remarkably; the Sb doping of 7% comes into being more free electrons to make its sheet resistance reduced; the P doping of 2% further enhances its conductance by reason of the forming of quasi-continuous doping energy band.

研究表明，4%的铟掺杂有效地改善了薄膜的内部结构，使得紫外-可见光的透过率显著增加；7%的锑掺杂释放出了更多的载流子，使薄膜的方块电阻降低，2%的磷掺杂因准连续杂质能带的形成进一步提高了薄膜的电导率。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。