薄膜电阻

The temperature coefficient of resistance with tempering temperature and its relationship with non- crystallinity was studied.

研究了这一合金薄膜电阻温度系数TCR随热处理温度的变化以及它与非晶度的关系。

The process includes dry etching the protecting layer of AMR film; wet etching the permalloy layer of the AMR film; and dry etching the transition layer of the AMR film.

一种多层膜的干湿结合蚀刻方法，包括：干法刻蚀各向异性磁电阻效应薄膜的保护层；湿法腐蚀各向异性磁电阻效应薄膜的坡莫合金层；干法刻蚀各向异性磁电阻效应薄膜的过渡层。

There are three platinum catalyst micro channels which have different width ,such as 1000 m , 400m and 40m. The platinum catalyst micro channel reactor is fabricated by MEMS technology. The reactor uses the exothermic reaction of hydrogen and oxygen on the platinum catalyst plate as the heat source and the platinum thin film resistance deposited on a glass chip by face micro machining process as catalyst and temperature sensor. The channel is bonded with a cover plate etched by bulk micromachining technology to become a mico- channel reactor.

实验主要以微机电加工技术制作白金触媒微管道反应系统，利用微机电面型加工技术将白金薄膜电阻制作於基材为玻璃的晶片上，以此为反应所需的触媒及温度量测元件，并用体型加工技术蚀刻出微流道的上盖板相结合成微管道反应系统，本研究以1000μm、400μm及40μm的白金触媒微管进行测试，并利用微管道管壁上触媒表面降低反应活化能的特性来维持反应，此微反应系统利用氢气与氧气在白金触媒平板上的放热反应作为能量的来源。

In this paper, a thin-film resistor loaded microstrip toroidal resonator is proposed, and a new type equalizer is designed with this structure.

文中提出了一种薄膜电阻加载的微带环形谐振器，并用其设计了一种新型均衡器子机构。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

Metal silicides have wide application prospect in micro-electron field for their advantages of low resistivity, high melting point and stable chemical properties.

金属硅化物因其薄膜电阻率低，熔点高，化学性质稳定，在微电子领域具有广阔的使用前景。

It was shown that with interface modifications, pentacene film resistance variation will become a key factor in gas sensing.

同时也显示出，经过表面处理修饰后，pentacene薄膜电阻变化似乎已经变成主要因素，对於气体感应而言。

Two kinds of multi-layer structure of VO_x/PS/Si and VO_x/Si were fabricated, and the effects of porous silicon on the composition of vanadium oxide thin films were analysed.

对比了VO_x/PS/Si结构与VO_x/Si结构中氧化钒薄膜电阻对温度的热敏感性能，研究了多孔硅基底温度升高对氧化钒薄膜组分的影响。

Laser trimming machine is an application of the laser trimming technique in electronic processing industry. It is a high technique equipment that utilizes interdisciplinary technologies such as optics, fine mechanics, computer control and fine measurement.

激光调阻机是激光刻蚀技术在电子加工工业中的一种应用，是集光学、精密机械、计算机控制和精密测量技术于一体的高技术的加工设备，主要用于厚薄膜电阻的微调加工。

Tantalum nitride and nichrome are the two most common materials used as thin film resistors for monolithic microwave integrated circuits based on AlGaN/GaN high electron mobility transistors.

TaN和NiCr是AlGaN/GaN HEMTs微波集成电路中薄膜电阻最为常用的两种材料。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。