薄膜形成

Films are obtained via dip-coating process. The results show that the isolated and tetrahedrally coordinated Ti(superscript 4+) which formed Ti-O-Si bondon the pore inner surface of the framework.

实验结果表明，多孔薄膜中的钛离子形成了Si-O-Ti键的孤立四配位形态，使薄膜具有复合型钛离子的催化效果，并且有介孔结构。

The surface voltage of electret film have relationships with charging boltage, temperature, distances between electrodes and charging time,and will attenuate in index.

驻极体薄膜的表面电位与充电电压、温度、极间距离、充电时间有关，电晕充电法形成的薄膜驻极体的表面电位呈e指数衰减。

Best.XRD and SEM analysis indicate effect of generated TiO_2 film smooth catalysis, adulteration does not change TiO_2 brilliant model, the film of TiO_2 smooth catalysis after modified is added thick, the decrescent of a narrow passage providing the only means of access to a certain place that small arc discharge forms, exterior accumulating increases.

生成的TiO_2薄膜光催化效果最好。XRD及SEM分析表明，掺杂不改变TiO_2晶型，改性后的TiO_2光催化薄膜增厚，微弧放电形成的孔道变小，表面积增加。

X-ray diffraction experiments indicated that the films consisted of g-C3N4 and β-C3N4, and the graphitic form carbon nitride was the main component of the film.

IR光谱证实了薄膜中碳氮化合物的形成，而XRD的检测结果表明，类石墨相g-C3N4是碳氮薄膜中的主要成分，同时有极少量的β-C3N4晶相生成。

The results show that pyrochlore appears in the films when crystallization temperature is 400～600℃ and films with a large quantity of perovskite can be obtained using rapid heating process.

用不同升温速率控制PZT薄膜晶化过程，实验结果表明，当晶化温度在400～600℃时，薄膜显焦绿石相，当采用较高升温速率50℃／min时，在硅片上可缩小焦绿石相生成，提高钙钛矿相形成，从而获得取向性高的钙钛矿相PZT薄

The charge transfer rate and the total absorption of simulated solar light were remarkably increased because of the presence of MWCNT thin film, which has a superior electron-conducting property, an absorption property and a tanglesome network, providing an ideal matrix for uniform distribution of TiO2 nanoparticles.

MWCNT薄膜具有良好的电子导电性、吸光性和镂空的网状结构等性质，形成了一个理想的基板负载TiO2纳米颗粒，而且显著提高了纳米复合薄膜电极光生载流子的分离效率和模拟太阳光的利用效率。

This embodiment will illustrate that the present invention of the (poly trimethylene terephthalate) PTT laminated film performs better than its PET counterpart in terms of vapor impermeability, flexibility and warpage; its vapor impermeability is about equal to a TPT back sheet, while flexibility and warpage are better than TPT back sheet.

本实施例说明本发明聚对苯二甲酸丙二醇酯薄膜复合成的叠层膜的抗水汽渗透性、挠性和翘曲度优于多层聚对苯二甲酸乙二醇酯薄膜复合形成的叠层膜，抗水汽渗透性与TPT背板基本相当，挠性和翘曲度优于TPT背板。

In the results of the optical properties, these molecular monomers have different HOMO and LUMO energy gap such that there are dual-emission and energy transfer mechanism in solution fluorescence spectrum. In the study of the electrochemical properties, various of triphenylamine derivaties have different oxygen binding site and they make elecropolymerization happen or not. In the applications of the hole-transport materials, the performance of compound 21 is better than other compounds. The electropolymerized-film may have residual cation molecules so they can increase the concentration of hole-transport. Due to this reason , compound 21 is suitable to become hole-transport materials.

在光学研究方面，由於目标化合物内单体的HOMO及LUMO能阶差异，使得在溶液萤光放射上有双发射及能量转移的情形发生；在电化学研究方面，不同的三苯胺衍生物由於氧基的位置不同，使得取代基在间位的化合物有不错的电聚合效果；而元件的应用上，具有咔唑基团的化合物21由於在形成电聚薄膜后，可能有残余的阳离子态化合物，使得电聚薄膜内的电洞数浓度较高，因此与其他元件相比之下，有较低的启动电压和不错的元件效率。

Then GaN nanostructured thin films comprised of regular hexagonal crystal grains have been successfully synthesized by ammoniating Ga2O3 films at the temperature of 850℃ for 15 rain in a quartz tube. X -ray diffraction reveals that the synthesized GaN is of a hexagonal wurtzite structure with lattice constants a =0.318 nm and c =0.518 nm.

然后将硅基Ga2O3置于管武石英炉中，在850℃的氨化温度下氨化15min后，成功制备出GaN薄膜，该薄膜由正六边形的晶粒组成。X射线衍射表明GaN具有六方纤锌矿结构，晶格常数为a=0.318nm和c=0.518nm.X射线光电子能谱的测试确定了样品中Ga-N键的形成，并且Ga和N的化学计量比为1：1。

The growth mechanism of silver seed on silicon has been presented: at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously.

提出了银晶籽在硅表面的生长机理是：首先是在硅表面没有被完全覆盖的情况下，单层银晶籽生长的同时伴随有多层的生长，此后单层逐渐形成连续的薄膜，在单层晶籽层上多层薄膜逐渐增厚，并伴随有部分银原子向硅中的扩散。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新