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薄膜形成

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These edge profiles are configured to reduce the volume of thin film residues that may form on a top surface of a semiconductor wafer at locations adjacent a peripheral edge thereof.

构造这些边缘轮廓以减少薄膜残余物的量,该薄膜残余物可能形成在半导体晶片的上表面上并靠近其周围边缘的位置处。

The thin film semiconductor device has a thin film transistor 3 formed on a glass substrate 1 containing alkali metal.

该薄膜半导体器件具有在含有碱性金属的玻璃基片1上形成的薄膜晶体管3。

As a result, if the iridescence is produced by thin-film interference, not only the thickness of lamellar structure must be defined within a certain nanometer, but also the refractive index need to be different between lamellar structure. In other words, the chemical composition, refractive index and thickness of exsolution lamellae need form to trinity, such as labradorite, albite, andradite and orthoamphibole. If the iridescent color is produced by grating-diffraction, the lamellar structure just needs to be arrayed regularly, the spacing of the edges of lamellar structure needs to be regular and narrow, but not necessarily within the range of the wavelength of visible light, such as shell of abalone, pearl and opal.

薄膜干涉式晕彩不仅要求宝石内部结构层的厚度必须在一定的纳米范围内,而且结构层内部的折射率也必须有所差别,也即,当结构层由两相组分出溶而成,其化学成分、折射率和结构层厚度形成三位一体时,符合薄膜干涉式晕彩,如拉长石、钠长石、石榴石和角闪石;而光栅式衍射晕彩则仅要求结构层排列规则,边缘狭窄但不需要窄到可见光波长范围内,能使入射光的振幅或位相,或两者同时产生周期性空间调制的结构即可,如鲍贝壳、珍珠和欧泊。

MgO thin films were successfully prepared on Si substrate by a novel and simple Sol-Gel method. The results indicated that collodion is a key element to form stable MgO sols. The structures of MgO films are closely related to the amount of collodion and the annealing temperature.

摘 要 以硝酸镁为起始原料,胶棉液为添加剂,在Si(100)衬底上成功地制备MgO薄膜,结果表明,胶棉液是形成MgO溶胶的关键组份;薄膜的晶体结构与胶棉液的含量及退火温度有关。

CMC is used as woof trimming agent replacing traditional starch paste material, which can reduce pollution of woof during sizing and desizing. At the same time, CMC can form a membrane on woof which reduces"drop woof"and "decollation" sign.

CMC作为织物的整理剂,用于取代传统的淀粉浆料,大大减少了在织物上浆及退浆中对环境的污染,同时CMC在织物纤维上形成薄膜;而CMC薄膜具有吸湿性,增加了织物的塑性,减少高速织机上"跳纱"、"断头"现象。

In this dissertation, a series of ultra-thin films based on photosensitive diazoresin were fabricated through layer-by-layer self-assembly technique, and the films could be attached by covalent bond after the decomposition of diazonium group between layers under UV irradiation.

本论文利用层层自组装技术,制备了基于光敏性重氮树脂的系列超薄膜,这种感光性组装膜在紫外光照射下能够形成共价键联结,本论文着重对这些共价键联结超薄膜的功能特性进行了研究,主要结果如下

A new method of inscribing diffraction gratings by using a focused near-IR 800 nm femtosecond laser ablating gold film on glass substrate was reported.

提出了一种新的制备光栅的方法,利用800 nm的飞秒激光扫描蒸镀在石英玻璃衬底表面的金薄膜,通过烧蚀金薄膜在衬底表面形成衍射光栅。

III Investigations of ferromagnetic alloy films by XMCD1. By using XMCD and SQUID magnetometry, the spin and orbital moments of Fe and Co in the Co_(0.9)Fe_(0.1)(50nm) are studied. Compared with single-element film, the spin moment of Co remains constant while that of Fe reduced from 1.98 to 1.63μB. The contributions of different elements in the film is, m_ : m_ - 10.5 : 89.5. The average magnetic moment (1.90μB) determined by XMCD is in agreement with that (1.82μB) obtained from SQUID measurements. Utilizing XMCD spectra in-plane element-dependent magnetic anisotropy in Co_(0.9)Fe_(0.1) films has been investigated. Apart from known field-induced easy axis during film growth, a soft axis perpendicular to it was observed, and hard axes are 66° away from the easy axis.

利用XMCD谱研究了50nm Co_(0.9)Fe_(0.1)薄膜,结果发现:样品中Fe、Co元素对磁化强度的贡献比为10.5∶89.5;由XMCD获得的合金平均原子磁矩1.90μ_B与用SQUID磁强计得到的合金平均原子磁矩1.82μ_B基本相符;对Co_(0.9)Fe_(0.1)薄膜面内元素分辨的磁各向异性的研究发现,除了在生长的磁诱导方向存在易磁化轴外,与该轴垂直的方向还存在一个类似易轴的软磁化轴;面内的两个难磁化轴与易磁化轴取向大约成66°夹角,构成面内双轴磁各向异性,并根据XMCD结果对面内双轴形成的原因进行了分(来源:Ad2BC82论文网www.abclunwen.com)析。2。

The preparation of self-supporting film is different from normal film. A series of methods has been formed in the past fifty years.

自支撑薄膜的制备方法与普通薄膜的制备方法有很大的区别,经过近50年的发展,已经形成了一系列独特的制备方案。

During the history of the ripple structure was formed, the dislocation-like, crack and oriented surface crack easily happed in the ripple structure.

另外,大面积涟漪结构在薄膜表面形成过程中,会在PDMS弹性薄膜内强度较弱之分子链结构与缺陷处,产生类差排、裂痕及排向表面裂缝等缺陷。

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