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薄膜形成

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The thin-film transistor 30 may be formed so as to include an LDD structure in which a lightly doped region is provided on both sides of the cannel forming region 1b.

如示于图3、图3地,薄膜晶体管30,具备相对于岛状的半导体膜1a、形成有沟道形成区域1b、源区域1c、漏区域1d的结构,有时也形成为:具有在沟道形成区域1b的两侧具备低浓度区域的LDD(Lightly Doped Drain,轻掺杂漏)结构。

Compared with the film produced under the normal incidence, the number of the large particles for films fabricated at the deposition angle of 30° decreases greatly and the nano-particles with better distribution and more uniform particle size are formed after high temperature treatment.

经过高温热处理,相比于垂直沉积的纳米薄膜, 30°倾斜沉积制备的薄膜微观结构中大晶粒的数量显著下降,形成颗粒分布较好的纳米颗粒薄膜。

From the experiment results,it is concerned that the thin film was composed of many small particles(most of them was with a size between 20 and 30 nm)uniformly deposited and intervein on the substrate surface. Some large particles were tightly embedded into the thin film.The deposition rate increased by increasing the precursor flow rate and the discharge power.

以上的分析结果表明:常压等离子化学气相沉积得到的薄膜是一种由众多小颗粒(其中主要为尺度在20-30nm的颗粒)的颗粒串联形成的网孔结构,并且在薄膜生长过程中一部分的颗粒被包埋在其中,薄膜颗粒分布较均匀。

From FT-IR we think that the hydrogen bond between the polar oxygenous group on the thin film surface treated with plasma and acetone molecules would enlarge the distance between the carbon black particles, resulting in the addition of the electrical resistance, then the response behavior of the thin film to acetone was improved greatly.

我们通过FT-IR研究认为,等离子体处理后,薄膜表面引进的极性含氧基团与丙酮分子之间氢键的形成会增大炭黑粒子之间的距离,导致了薄膜电阻的极大增加,使薄膜对丙酮蒸气的响应得到很大改善。

This technology can be employed to create advanced frequency shaping components and devices including filters,duplexers,and resonators for oscillators.

薄膜体声波谐振器采用一种先进的谐振技术,它是通过压电薄膜的逆压电效应将电能量转换成声波而形成谐振,这一谐振技术可以用来制作薄膜频率整形器件等先进元器件。

The iron hydroxide particles prepared above were coated with cobalt by surface adsorption-precipitation reaction. The low pH and Co〓 concentration of suspended system can prevent the nanoparticle from heterocoagulation. The saturation magnetization of MP particles with uniform cobalt hydroxide layer is 10% higher than that of the α-Fe. And a close SiO〓 layer can improve the coercivity by about 92%.

铁黄粒子表面吸附-反应沉积钴过程中较低的pH值和浓度有利于形成均匀的钴氢氧化物包覆层,可避免形成异相凝聚现象,使比饱和磁化强度提高10%;表面包覆二氧化硅形成致密的薄膜,使矫顽力提高92%。

A Dense scale on the2O3(Cr/Y=4/1) coated specimen;2O3(Al/Y=3.6/1) coated specimen; Oxide nodules formed at the corner on the specimen coated with2O3(Cr/Y=2/1) deposited for 15 s; Locally spalled scale on the same specimen as in; The trace of cracks in the deposited oxide film on the scale formed on the specimen coated with2O3 (Cr/Y=2/1) deposited for 60 s; Showing the similar trace on the same specimen as in b

沉积复合OTFC试样的氧化层形貌有如下特征:(1)氧化层绝大部分致密、完整、与基体附着良好,晶粒细小(图7a,7b);(2)在短时间(15s)沉积2O3 OTFC试样的局部表面出现了不均匀氧化(图7c,7d),但只是在沉积Cr/Y=4/1膜试样的局部表面产生了类似无涂层Fe25Cr上剥落的厚膜(图7d);(3)沉积2O3(Cr/Y=2/1) 60s(图7e)与15s(图7c)的结果不同,前者整个试样表面氧化产物颗粒细小,无粗大氧化物颗粒形成;(4)沉积2O3(Cr/Y=2/1) 60s和2O3(Al/Y=3.6/1)薄膜的试样由于氧化增重非常少,氧化层很薄,刻印着涂层中局部出现的裂纹(图7e,7f),这种印迹的保留可能反映着传质机制的改变,即新氧化物由在外表面形成转变为在外表面以下形成。

At the same time, the influences of the atmosphere and temperature of the heat treatment, the concentration of the sols and the ratio Cd/Ti on the properties of the films were discussed.

研究结果表明:(1)溶胶凝胶法制备CdS/TiO_2薄膜合适的工艺参数为:TiO_2和CdS溶胶的浓度分别为0.6mol/L和0.1mol/L,CdS/TiO_2=0.45,采用氮气气氛480℃下热处理1h;(2)通过形成CdS/TiO_2复合薄膜,在一定程度上提高了TiO_2薄膜在可见光范围内的光吸收性能和光电转换性能。

The result of research indicates the In-doped mol proportion of 4% improves the structure of thin films effectively so as to increase its ultraviolet-visible light transmissivity remarkably; the Sb doping of 7% comes into being more free electrons to make its sheet resistance reduced; the P doping of 2% further enhances its conductance by reason of the forming of quasi-continuous doping energy band.

研究表明,4%的铟掺杂有效地改善了薄膜的内部结构,使得紫外-可见光的透过率显著增加;7%的锑掺杂释放出了更多的载流子,使薄膜的方块电阻降低,2%的磷掺杂因准连续杂质能带的形成进一步提高了薄膜的电导率。

One of them is based on etched porous alumina and carbon-gold-carbon compound film. The alumnia film surface is composed of rows of valleys with diameter of about 300 nm, and is realized by etching porous alumina in diluted phosphorous acid.

第一种阴极采用基于多孔氧化铝和无定形碳的双层传导薄膜,其中氧化铝薄膜的表面具有横向尺寸为300 nm的特殊凹陷结构,是对常规多孔氧化铝薄膜进行腐蚀形成的。

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