薄膜形成

Or so. What's more, the theory of the films shaping and conducting is discussed. There are some key reactions such as alcoholysis reaction in the processing of Sol preparation, dehydration reaction and condensation polymerization when films are coated and consolidation in the process of desiccation and sinter.

左右。分析了溶胶-凝胶法制备薄膜的形成机理和导电机理，对薄膜形成过程进行分析，归纳出形成过程的化学反应主要有：溶胶制备中的醇解反应、浸渍提拉镀膜中的水解和缩聚反应以及干燥和热处理成膜中的聚合、分解与键合反应。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Block-copolyimide film from pPDA/ODA-PMDA was studied by TEM, SEM, PLM, ultra-deep three-dimensional microscope, TMA, and WAXD, which showed that the extensile strength and modulus of b-PI film were higher than that of irregular copolyimide film. It was also revealed that there was a large amount of crystallite formed in b-PI film, which was mainly attributed to its chain structure: rigid pPDA-PMDA chains were easy to form crystal nucleus because of phase separation, based on which semi-rigid PMDA-ODA molecular chains began to crystallize.

以pPDA／ODA-PMDA型嵌段共聚酰亚胺薄膜为对象，借助TEM、SEM、PLM、超景深三维显微镜、TMA、WAXD等手段，研究结果表明：b-PI薄膜的拉伸强度、弹性模量均高于无规共聚酰亚胺薄膜；b-PI薄膜中形成了大量的微晶，这是由于刚棒状的pPDA-PMDA分子链段因相分离容易形成晶核，然后半刚性的PMDA-ODA分子链段以PMDA-pPDA为晶核进行晶体生长造成的，而且ODA-PMDA分子链的结晶和酰亚胺化反应基本上是同步进行的。

When a voltage is applied to the plates a thin film of lead peroxide is formed on the positive plate.

当电压应用于板一氧化铅薄膜形成在正极板。

Because silver particles are stabilized by the other thermal decomposition products of silver behenate, in the range of 193°C~320°C, the formed film is not pure silver.

通过控制山嵛酸银的热分解温度可以构筑不同形态的银薄膜，在190°C~320°C，金属银被有机产物钝化，形成了掺杂有机物的金属银薄膜；当温度高于500°C时，有机产物进一步分解可以形成纯金属银薄膜。

The XRD data indicates that, Ag crystalloidal nanoparticles exist in the films as the annealing temperature above 300℃. As the contrast, non-crystalloidal Ag was found in the films annealed below 300℃. The AFM image of sample imply that, in the Ag layer was first prepared films, nanocomposite films consist of nanosized Ag particles embedded in MgF2 matrix.

在分层镀Ag和MgF2薄膜后，经过热处理使Ag颗粒扩散在MgF2介质中，通过AFM观察，对复合薄膜形貌进行了分析：如果先镀MgF2薄膜，再镀Ag薄膜，发现Ag颗粒主要分布在薄膜的表面，并且富集形成较大的颗粒，表现出块体Ag的吸收特性。

The UV and IR spectroscopic studies of the monomer films showed that the photoreaction ratio of monomer (about 50%) was higher than the corresponding photosensitive polymer (about 10%, PVCi). The polarized IR spectra proved that obvious anisotropic absorption was displayed in the irradiated photosensitive film. With polarizing microscopy method, we found that these kinds of photoalignment films exhibited good alignment ability, and the stability of the photoalignment film could reach about 100℃. 2 A photosensitive self-assembled monolayer was fabricated that contained photo-cycloadditable groups, such as, coumarin and cinnamate. The reaction process were detected by contact angle method because the IR absorption of monolayer was very weak. The photosensitive self-assembled monolayer promote uniform alignment of nematic liquid crystals by LPUV, and it thermal stability could reach about 130℃. 3 A cationic bolaform amphiphiles was synthesized that had two photosensitive double bonds, and can be polymerized by ultraviolet. A layer-by-layer self-assembled deposition film was prepared in aqueous solution by using this material and poly (sodium 4-styrenesulfonate). The UV-Vis. spectra proved that the multilayers film was uniform and layer-by-layer. When LPUV irradiated the film, the photopolymerizable double bond underwent [2+2] cycloaddition, and the production of the reaction distributed along the polarized direction of incident LPUV. Polarized UV-Vis. spectra indicated that the irradiated self-assembled multiplayer film was anisotropic, and the dichromic ration is about 0.09, it is higher than the spin-coating method of photosensitive polymer or monomer. We used this anisotropic film as alignment layer of nematic liquid crystals, and obtained a uniform and stability alignment result, the static contrast ratio is about 100, which is very close to application of liquid crystal device. This thesis is an instance that the photochemical material was used in the physics region of liquid crystals, the route that was from photosensitive monomer, self-assembled monolayer film to self-assembled multiplayer film was undergone, by this logical research method photoailgnment of liquid crystal was extended and consummated.

围绕上述思路开展了如下工作：1合成了三种可进行光二聚反应的光敏小分子单体，LPUV 辐照制作了光控取向膜；用紫外-可见光谱法和红外光谱法分析了薄膜中的光化学反应，发现小分子的光反应程度可达到50%以上，至少比光敏高分子高出5倍；薄膜的偏振红外光谱证实，经过LPUV 辐照后薄膜出现了明显的各向异性；将小分子光控取向膜制成液晶器件，在偏光显微镜下观察看到均匀一致的液晶取向；并且热稳定性达到100℃左右，接近实用化要求。2制备了含肉桂酸、香豆素基团的自组装单层膜；采用接触角的方法监测自组装反应的动力学过程；紫外-可见光谱证实了自组装单层膜在石英基板表面形成；自组装单层膜经LPUV 辐照后能诱导液晶均匀取向，而且热稳定性可达130℃，热稳定性进一步提高。3合成了含有光敏双键的双季铵盐，在水溶液状态下将它和聚乙烯基苯磺酸钠沉积生成layer-by-layer 自组装多层膜，紫外-可见光谱证实这是一个逐层均匀的沉积；在LPUV 照射下，自组装膜中的光敏双键按照偏振方向发生[2+2]环加成反应，形成取向膜，用二向色性值评价的分子取向度高于高分子及小分子光控取向膜的水平；实验证明用自组装多层膜制成的液晶器件亮暗态均匀，静态对比度约为100，达到实用化器件的水平。

Low temperature ordering of FePt thin films has been achieved by using a thin equiatomic AuCu underlayer.

提出并利用相干生长的多层膜中有序－无序转变过程的彼此关联作用，借助AuCu缓冲层的低温有序化，降低FePt薄膜的有序转变温度200℃以上，为FePt薄膜的低温有序化开劈了一条新途径；制备多层膜，退火形成有序相FePt纳米颗粒分散在Ag基体的复合结构，比FePt/Ag共溅射或合金多层膜方法的退火温度明显降低；通过缓冲层Ta控制FePt的粗糙度和晶界密度，同时界面附近Ta、Pt发生化学反应，两者共同促进薄膜内Pt原子的有效迁移，从而加速FePt有序化；进一步，在Ta和FePt之间插入Bi薄层，强化Ta、Pt的扩散，在更低温度下形成高矫顽力的有序化FePt薄膜且FePt晶粒之间交换作用大大减弱；发现MgO薄膜作底层，可控制与MgO晶粒尺寸大致相当的临界厚度以下的FePt有序化薄膜的（001）取向，同时，MgO和FePt的相对厚度显著影响（001）取向FePt的有序化。

In this paper, it expatiates film theory and microcosmic process of film growing.

结合具体的膜系详细地阐述了薄膜的基本原理和薄膜形成的微观过程。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器，该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104，或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成；经历350℃的热试验之后，对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 －8 A/cm 2 以下。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新