薄膜层

The transmission, reflection and absorption spectra of the cyanine thin films were measured by the spectrophotometer and the reflection and the absorption of this cyanine thin film are high enough for optical recording at 780 nm.

通过染料薄膜光谱的分析，发现该染料薄膜在780 nm波长处有较大的吸收和较高的反射，多层膜的反射率达到75%，这符合橙皮书对反射率大于70%的要求。

As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

接着我们把掺氮ZnO薄膜作为沟道层材料，用Si3N4做栅绝缘层在非晶玻璃上制备了ZnO基薄膜晶体管，ZnO-TFT器件表现出了典型的场效应晶体管的输出特性。

Better film quality with oxygen free content and higher electron mobility can be achieved with InN film with AlN buffer layer .

氮化铝缓冲层的加入，可大幅提升氮化铟薄膜的电子移动率，并能在400℃制作出晶相单纯之氮化铟薄膜。

The measuring conditions of thin films thickness with grazing incident X ray is explained, and interferential principle and method of thickness measurement of multilayer thin films by grazing incident X ray are analyzed.

阐述了掠入射X射线测量薄膜厚度的条件，讨论和分析了掠入射X射线测量多层薄膜厚度的干涉原理和方法。

In the example, in the upper side layer of the pixel electrode 7a, an interelectrode insulating film 8, a common electrode 9a in which slit-like openings 9b are formed, and an alignment layer 16 are sequentially formed.

地，覆盖作为像素开关元件的薄膜晶体管30地形成层间绝缘膜6，并通过该层间绝缘膜6的接触孔6a及漏电极5b，使像素电极7a电连接于薄膜晶体管30的漏区域1d。

The results showed that both annealing after the deposition and ion bombardment before the deposition can increase the microhardness.

由于在膜层很薄时，薄膜显微硬度的测量会受到基体材料硬度的影响，所以测量结果不能反映薄膜的本征硬度。

Main issues in this dissertation are structures and tribological properties of G-ic and BXO films by ion beam assisted deposition. Friction, wear and anti-corrosion performance were investigated.

本文研究的重点是离子束辅助沉积类石墨碳膜和BXO薄膜两种新型镀层的结构及其摩擦学性能，着重探讨薄膜材料摩擦磨损和抗腐蚀的性能特征。

Aiming at the laigh thermal conductivity of magnetic refrigerant materials, this paper presents a new technical scheme named vacuum diffusion bonding, which can improve its thermal conductivity. The results indicate that under the condition of temperature ranging from 550℃ to 620℃ in holding time ranging from 30 min to 120 min and a pressure ranging from 12 Mpa to 20Mpa, both Gd and Cu can effectively bond together.

针对室温磁制冷材料Gd本身导热系数低特点，提出了采用真空扩散焊方法改善Gd导热性能的成型工艺方案，在温度为550~620℃，压强为12~20Mpa，保温时间为30~120min条件下，实现了扎和铜异种材料连接，并比较了在锐基体上溅射一层铜薄膜和不溅射薄膜两种条件下的工艺性能。

Aiming at the laigh thermal conductivity of magnetic refrigerant materials,this paper presents a new technical scheme named vacuum diffusion bonding,which can improve its thermal conductivity.

针对室温磁制冷材料Gd本身导热系数低特点，提出了采用真空扩散焊方法改善Gd导热性能的成型工艺方案，在温度为550~620℃，压强为12~20Mpa，保温时间为30~120min条件下，实现了钆和铜异种材料连接，并比较了在钆基体上溅射一层铜薄膜和不溅射薄膜两种条件下的工艺性能。

The ultrathin multilayer film of poly (diallyldimethylammonium chloride) and polyvinylidene fluoride has been prepared by the layer-by-layer static self-assembly method. The PVDF/PDDA multilayer film with the thickness ranging from about 30nm to 150 nm the thickness of each layer is about 9nm.

聚二烯丙基二甲基氯化铵和极化处理后的聚偏氟乙烯复合超薄膜是通过层与层的静电自组装方法制备的，厚度约30～150 nm，每层膜厚度约为9 nm。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。